Integrated inductor

1. A method of forming an inductor in a crystal semiconductor layer, the method comprising:

generating an ion beam comprising of ions;

directing said ion beam to a surface of said crystal semiconductor layer;

applying a magnetic field to said ion beam to generate a helical motion of the ions; and

forming a three-dimensional helical structure in said crystal semiconductor layer by means of said ions of said ion beam, wherein said helical structure comprises ions of said ion beam penetrated into said crystal semiconductor layer.

2. The method of claim 1 , further comprising performing an activation anneal treatment after formation of said three-dimensional helical structure.

3. The method of claim 1 , further comprising forming a silicide layer on a top surface of said crystal semiconductor layer after the formation of said three-dimensional helical structure to provide an electrical contact to said three-dimensional helical structure.

4. The method of claim 1 , further comprising forming said crystal semiconductor layer on a metal layer and forming a contact to said metal layer by forming an opening in said crystal semiconductor layer adjacent to and spaced apart from said three-dimensional helical structure and filling said opening with a contact material.

5. The method of claim 4 , further comprising forming an isolation region in a semiconductor wafer and forming said metal layer above said isolation region.

6. The method of claim 5 , further comprising forming a transistor device on said semiconductor wafer separated from said three-dimensional helical structure by said isolation region.

7. The method of claim 1 , wherein said ion beam is directed to the surface of said crystal semiconductor layer under a tilt angle of 10-40° with respect to an axis perpendicular to the surface of said crystal semiconductor layer and the magnetic field is directed substantially parallel to the axis.

8. A method of forming an inductor in a crystal semiconductor layer, the method comprising:

forming a shallow trench isolation in a semiconductor substrate;

forming a dielectric layer on said semiconductor substrate and said shallow trench isolation;

forming a metal layer on said dielectric layer;

forming a crystal semiconductor layer on said metal layer;

generating an ion beam comprising ions and directing said generated ion beam to a surface of said crystal semiconductor layer over said shallow trench isolation only;

applying a magnetic field to said ion beam to generate a helical motion of the ions;

forming a three-dimensional helical structure in said crystal semiconductor layer over said shallow trench isolation by means of said ions of said ion beam; and

etching a stack of said dielectric layer, said metal layer and said crystal semiconductor layer formed on said semiconductor substrate to form a transistor device.

9. The method of claim 8 , wherein said crystal semiconductor layer is made of polysilicon.

10. The method of claim 8 , further comprising performing an activation anneal treatment after formation of said three-dimensional helical structure.

11. The method of claim 8 , further comprising forming silicide regions atop of said crystal semiconductor layer over said semiconductor substrate and said shallow trench isolation.

12. The method of claim 11 , wherein said silicide region of said semiconductor substrate and said silicide region over said shallow trench isolation are formed in one single processing step.

13. The method of claim 11 , further comprising forming an electrical contact to said silicide region over said shallow trench isolation and another electrical contact through said crystal semiconductor layer adjacent to and spaced apart from said three-dimensional helical structure to said metal layer over said shallow trench isolation, thereby completing the inductor.

14. The method of claim 8 , wherein said ion beam is directed to the surface of said crystal semiconductor layer under a tilt angle of 10-40° with respect to an axis perpendicular to the surface of said crystal semiconductor layer and said magnetic field is directed substantially parallel to the axis.

15. A semiconductor device, comprising

a FET comprising a channel region and source and drain regions formed in a semiconductor substrate, a gate dielectric formed on said semiconductor substrate,

a metal layer formed on said gate dielectric, a polysilicon layer formed on said

metal layer and a silicide layer formed on said polysilicon layer;

a shallow trench isolation formed adjacent to said source region or said drain region of said FET; and

an inductor comprising a first plate, a second plate and an electromagnetic coil and formed over said shallow trench isolation, wherein:

said first plate of said inductor is made of a same material as said metal layer of said FET;

said second plate of said inductor is made of a same material as said silicide layer of said FET; and

said electromagnetic coil of said inductor is formed by ions doped in a form of a three-dimensional helical structure in a same material as said polysilicon layer of said FET or by a metal material formed in a form of a three-dimensional helical structure in the same material as said polysilicon layer of said FET.

16. A method of forming an inductor in a crystal semiconductor layer, the method comprising:

forming an isolation region in a semiconductor wafer;

forming a metal layer above said isolation region;

forming said crystal semiconductor layer on said metal layer;

generating an ion beam comprising of ions;

directing said ion beam to a surface of said crystal semiconductor layer;

applying a magnetic field to said ion beam to generate a helical motion of the ions;

forming a three-dimensional helical structure in said crystal semiconductor layer by means of said ions of said ion beam; and

forming a contact to said metal layer by forming an opening in said crystal semiconductor layer adjacent to and spaced apart from said three-dimensional helical structure and filling said opening with a contact material.

17. The method of claim 16 , further comprising forming a transistor device above said semiconductor wafer separated from said three-dimensional helical structure by said isolation region.