System-in-packages having vertically-interconnected leaded components and methods for the fabrication thereof
View Patent ↗System-in-Packages (SiPs) and methods for producing SiPs are provided. In one embodiment, the above-described SiP fabrication method includes the step or process of forming a through-hole in a core package, the core package containing an electrically-conducive routing feature exposed at a sidewall surface of the through-hole. A leaded component is positioned adjacent the core package such that an elongated lead of the leaded component extends into the through-hole. An electrically-conductive material, such as solder, is then applied into the through hole to electrically couple the elongated lead of the leaded component to the electrically-conductive routing feature of the core package.
1. A method for producing a System-in-Package, the method comprising:
providing a core package comprising a molded body, a semiconductor die embedded in the molded body, and one or more Redistribution Layers (RDLs) formed over a molded body;
forming a through-hole in the core package, the through-hole having a first portion extending through the RDLs and having a second portion extending through the molded body;
positioning a leaded component adjacent the core package such that an elongated lead of the leaded component extends into the through-hole; and
applying an electrically-conductive material between the elongated lead of the leaded component and an interconnect line contained within a sole or an outermost metal level of the RDLs to electrically couple the leaded component and the semiconductor die, the electrically-conductive material applied in sufficient volume to at least partially fill the first portion of the through-hole formed through the RDLs, while preventing ingress of the electrically-conductive material into the second portion of the through-hole formed through the molded body.
2. The method of claim 1 wherein applying comprises:
depositing solder over the through-hole; and
heating the solder to a reflow temperature to inflow the solder into the through-hole and electrically couple the elongated lead and the interconnect line.
3. The method of claim 2 further comprising plating the through-hole with an electrically-conductive, solder-wettable material prior to depositing the solder.
4. The method of claim 1 wherein the core package has a frontside and an opposing backside, wherein the leaded component comprises a component body, and wherein positioning comprises positioning the component body adjacent the backside of the core package.
5. The method of claim 4 wherein positioning comprises disposing the component body at a location vertically overlapping with the semiconductor die.
6. The method of claim 4 wherein positioning comprises positioning the leaded component adjacent the core package such that component body is separated from the backside of the core package by vertical gap.
7. The method of claim 4 wherein the through-hole extends from the frontside to the opposing backside of the core package along a substantially vertical axis.
8. The method of claim 1 further comprising selecting the leaded component from the group consisting of a Radio Frequency antenna structure and a Radio Frequency shield structure.
9. The method of claim 1 further comprising plating the through-hole with a solder-wettable, electrically-conductive alloy to produce a plated through-hole, and wherein applying comprises reflowing solder into the plated through-hole.
10. The method of claim 9 wherein the core package further comprises an embedded ground plane embedded within the molded package body and exposed at the sidewall surface, and wherein reflowing comprises reflowing the solder to electrically couple the embedded ground plane and the elongated lead.
11. The method of claim 1 wherein the through-hole comprises a frontside opening and a backside opening, wherein inserting comprises inserting the elongated lead into the through-hole through the backside opening, and wherein applying comprises directing an electrically-conductive material into the frontside opening of the through-hole.
12. The method of claim 1 wherein the molded body has a fan-out region surrounding the semiconductor die, and wherein forming comprises producing the through-hole to extend through the RDLs and through the fan-out region.
13. The method of claim 1 wherein the steps of forming, positioning, and applying are performed while the core package remains interconnected with a plurality of other core packages produced across a molded panel, and wherein the method further comprises singulating the molded panel to separate the core package from the plurality of other core package after applying the electrically-conductive material into the through-hole.
14. The method of claim 1 wherein forming comprises drilling the through-hole through the at least one RDL and through the molded panel at a location intersecting the interconnect line such that a portion of the interconnect line is removed by drilling.
15. A System-in-Package (SiP), comprising:
a core package, comprising:
a frontside surface;
a backside surface opposite the frontside surface;
a molded body having a fan-out region;
a semiconductor die embedded in the molded body and surrounded by the fan-out region;
at least one Redistribution Layer (RDL) formed over the molded body;
a first through-hole formed in the core package, the first through-hole having a first portion extending through the at least one RDL and having a second portion extending through the fan-out region of the molded body; and
an interconnect line contained in the at least one RDL, electrically coupled to the semiconductor die, and terminating at a sidewall of the first through-hole;
a leaded component, comprising:
a component body positioned adjacent the backside surface of the core package; and
a first lead extending from the component body into the first through-hole; and
an electrically-conductive material electrically coupling the first lead to the interconnect line, the electrically-conductive material at least partially filling the first portion of the first through-hole, while not entering the second portion of the first through-hole.
16. The SiP of claim 15 wherein the electrically-conductive material comprises reflowed solder.
17. The SiP of claim 15 wherein the leaded component is selected from the group consisting of a Radio Frequency antenna structure and a Radio Frequency shield structure.
18. The SiP of claim 15 wherein molded body comprises a singulated piece of a molded panel from which material has been selectively removed to produce the through-hole along with a plurality of other through-holes.
19. The SiP of claim 15 wherein the core package further comprises a second through-hole formed through the at least one RDL and through the fan-out region of the molded body, wherein the leaded component comprises a second lead extending from the component body into the second through-hole, and wherein the semiconductor die is located between the first and second through-holes, is located between the first and second leads, and vertically overlaps with the component body, as taken along an axis orthogonal with the frontside surface of the core package.