METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
1 . A metal etchant composition comprising:
an organic peroxide in a concentration in a range of about 0.1 to about 20 wt. % based on the total weight of the composition;
an organic acid in a concentration in a range of about 0.1 to about 70 wt. % based on the total weight of the composition; and
an alcohol-based solvent in a concentration in a range of about 10 to about 99.8 wt. % based on the total weight of the composition.
2 . The metal etchant composition of claim 1 , wherein at least one of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), aluminum (Al), tungsten (W), or copper (Cu) is etched by the metal etchant composition.
3 . The metal etchant composition of claim 1 , wherein the organic peroxide includes at least one peroxy ester having a structure of Formula 1, at least one peroxy acid having a structure of Formula 2, at least one diacyl peroxide having a structure of Formula 3, and/or at least one peroxy dicarbonate having a structure of Formula 4,
wherein R and R′ are each independently a hydrocarbon compound.
4 . The metal etchant composition of claim 3 , wherein the organic peroxide includes at least one of t-butyl peroxyacetic acid, lauroyl peroxide, or ethyl peroxy dicarbonate.
5 . The metal etchant composition of claim 1 , wherein the organic acid has a carbon compound structure including 3 to 11 fluorine atoms or 3 to 35 hydrogen atoms.
6 . The metal etchant composition of claim 5 , wherein the organic acid includes at least one of 2,2,2-trifluoroethanoic acid (CF 3 COOH), 2,2,3,3,4,4,4-heptafluorobutanoic acid (CF 3 CF 2 CF 2 COOH), acetic acid (CH 3 COOH), or butanoic acid (CH 3 CH 2 CH 2 COOH).
7 . The metal etchant composition of claim 1 , wherein the alcohol-based solvent includes 1 to 15 carbon atom(s).
8 . The metal etchant composition of claim 7 , wherein the alcohol-based solvent includes at least one of methanol, ethanol, propanol, isopropanol, heptanol, or octanol.
9 . The metal etchant composition of claim 1 , further comprising:
a chelating agent in a concentration in a range of about 0 to about 3 wt. % based on the total weight of the composition.
10 . The metal etchant composition of claim 9 , wherein the chelating agent includes two or more carbonyl groups or two or more amine groups.
11 . The metal etchant composition of claim 10 , wherein the chelating agent includes at least one of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione [CF 3 C(O)CH 2 C(O)CF 3 ], 1,1,1-trifluoro-2,4-pentanedione [CH 3 C(O)CH 2 C(O)CF 3 ], or pentane-2,4-dione [CH 3 C(O)CH 2 C(O)CH 3 ].
12 . The metal etchant composition of claim 1 , further comprising:
a surface active agent in a concentration in a range of about 0 to about 3 wt. % based on the total weight of the composition.
13 . The metal etchant composition of claim 12 , wherein the surface active agent is a fluorine-based surface active agent.
14 .- 22 . (canceled)
23 . A composition comprising:
an organic peroxide;
an organic acid; and
an alcohol-based solvent,
wherein the composition is anhydrous.
24 . The composition of claim 23 , wherein the organic peroxide and the organic acid are present in the composition in a ratio in a range of about 1:1 to about 1:5 (organic peroxide:organic acid).
25 . The composition of claim 23 , wherein the composition provides an etch rate of a metal layer of about 15 Å/hour to about 40 Å/hour.
26 . The composition of claim 25 , wherein the metal layer comprises at least one of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), aluminum (Al), tungsten (W), or copper (Cu).
27 . The composition of claim 23 , wherein the organic peroxide is present in a concentration in a range of about 0.1 to about 20 wt. % based on the total weight of the composition,
the organic acid is present in a concentration in a range of about 0.1 to about 70 wt. % based on the total weight of the composition, and
the alcohol-based solvent is present in a concentration in a range of about 10 to about 99.8 wt. % based on the total weight of the composition.
28 . The composition of claim 23 , further comprising a supercritical fluid.
29 . The composition of claim 23 , wherein the composition generates oxygen radicals.
30 . (canceled)