Ordering structure of scintillator and fabrication method
An ordering structure scintillator of scintillator and fabrication method is disclosed. The ordering structure scintillator of scintillator comprises: a tubular template, which consists of a plurality of thin film oxidized metal tubes; a plurality of scintillators, filled in the thin film oxidized metal tubes; and a package layer, formed on the surface of the tubular template for protecting the tubular template. In addition, through the fabrication method, the ordering structure scintillator of scintillator can be made by anodic treatment and die casting technology with low cost and rapid production; moreover, the film oxidized metal tubes of the tubular template can be further manufactured to nano tubes by adjusting electrolyte composition, electrolysis voltage, and processing time of anodic treatment, and the aperture size, the thickness and the vessel density of the nano tube can be controlled and ranged from 10 nm to 500 nm, 0.1 μm to 1000 μm, and 10 8 to 10 12 tube/cm 2 , respectively.
1. A method for manufacturing a scintillator with sub-micron column structure, comprising the steps of:
(1) fabricating a tubular template having a plurality of thin film oxidized metal tubes by processing an anodic treatment;
(2) adjusting the tube diameter of the thin film oxidized metal tubes by a chemical etching process;
(3) forming a thin film scintillator on the inner walls of the thin film oxidized metal tubes by a chemical impregnation process;
(4) filling a liquid phase of scintillator material into the thin film oxidized metal tubes by a die casting process, so as to form a scintillator in each thin film oxidized metal tube; and
(5) forming a package layer on the surface of the tubular template.
2. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , further comprising a step (2a) between the step (2) and the step (3), used for forming a reflective layer on the inner walls of the thin film oxidized metal tubes by a chemisorption process.
3. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , wherein the step (1) comprises the detailed steps of:
(11) processing a surface treatment to a metal substrate by mechanical grinding, and then annealing the metal substrate;
(12) disposing the metal substrate in a first electrolyte solution for processing an electrolytic polishing treatment under a first electrolyte voltage ranged from 5V to 50V and a first electrolyte temperature ranged from 2° C. to 40° C. for a first electrolyte time ranged from 1 minute to 10 minutes, wherein the first electrolyte solution comprises: HClO 4 , CH 3 (CH 2 ) 3 OCH 2 CH 2 OH and C 2 H 6 O;
(13) disposing the metal substrate in a second electrolyte solution for processing a first-time anodic treatment under a second electrolyte voltage ranged from 50V to 200V and a second electrolyte temperature ranged from −5° C. to 15° C. for a second electrolyte time ranged from 1 minute to 24 hours;
(14) disposing the product of the step (13) into a first remove solution, so as to remove the anodization film on the surface of the metal substrate under a first remove temperature ranged from 40° C. to 80° C. for a first remove time ranged from 10 minutes to 60 minutes, wherein the first remove solution comprises: CrO 3 and H 3 PO 4 ;
(15) disposing the metal substrate in the second electrolyte solution again, so as to perform a second anodic treatment under the second electrolyte voltage and the second electrolyte temperature for the second electrolyte time; and
(16) disposing the product of the step (15) into a second remove solution under a second remove temperature for a second remove time, so as to remove the metal substrate and obtain the tubular template having the thin film oxidized metal tubes, wherein the second remove temperature is room temperature and the second remove solution comprises: HCl and CuCl 2 .
4. The method for manufacturing the scintillator with sub-micron column structure of claim 3 , wherein the composition of the second electrolyte solution is selected from the group comprising: H 2 SO 4 , H 2 CrO 4 , C 2 H 2 O 4 , HF, H 3 PO 4 , NH 4 F, and mixtures thereof.
5. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , wherein the material of the thin film oxidized metal tubes is selected from the group consisting of: ZrO 2 , TiO 2 , Al 2 O 3 , Ta 3 O 5 , ZrO 2 , and Nb 2 O 3 .
6. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , wherein the step (2) comprises the detailed steps of:
(21) disposing the tubular template in a micro-structure modulation solution; and
(22) adjusting the tube diameter of the thin film oxidized metal tubes under a micro-structure modulation temperature ranged from 20° C. to 80° C. for a micro-structure modulation time ranged from 0.5 hour to 5 hours.
7. The method for manufacturing the scintillator with sub-micron column structure of claim 6 , wherein the composition of the micro-structure modulation solution is selected from the group comprising: H 2 SO 4 , H 2 CrO 4 , C 2 H 2 O 4 , HF, H 3 PO 4 , NH 4 F, and mixtures thereof.
8. The method for manufacturing the scintillator with sub-micron column structure of claim 2 , wherein the step (2a) comprises the detailed steps of:
(2a1) disposing the tubular template in a sensitization solution for treating with a sensitization process under a sensitization temperature for a sensitization time, wherein the sensitization temperature is ranged from 10° C. to 40° C., and the sensitization time being ranged from 0.5 minute to 30 minutes;
(2a2) disposing the product of the step (2a1) in an activation solution for treating with an activation process under an activation temperature for an activation time, wherein the activation temperature is ranged from 10° C. to 40° C., and the activation time being ranged from 0.5 minute to 30 minutes; and
(2a3) disposing the product of the step (2a2) in an electro-less deposition solution for treating with an electro-less deposition process under an electro-less deposition temperature and an electro-less deposition pH value for an electro-less deposition time, so as to form the reflective layer on the inner walls of the thin film oxidized metal tubes, wherein the electro-less deposition temperature is ranged from 50° C. to 90° C., the electro-less deposition time being ranged from 1 minute to 60 minutes, and the electro-less deposition pH value is ranged from 4 to 5.5.
9. The method for manufacturing the scintillator with sub-micron column structure of claim 8 , wherein the composition of the sensitization solution consists of SnCl 2 , HCl and H 2 O.
10. The method for manufacturing the scintillator with sub-micron column structure of claim 8 , wherein the composition of the activation solution consists of PdCl 2 , HCl and H 2 O.
11. The method for manufacturing the scintillator with sub-micron column structure of claim 8 , wherein the composition of the electro-less deposition solution comprises: NiSO 4 , NaH 2 PO 2 , Pb(NO 3 ) 2 , and Na 3 C 6 H 5 O 7 .
12. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , wherein the step (3) comprises the detailed steps of:
(31) immersing the tubular template in an aqueous solution for an immersion time, wherein the aqueous solution includes a scintillator material having a specific weight percent opposite to the aqueous solution; and
(32) treating the tubular template by a thermal process, so as to remove the water in the thin film oxidized metal tubes.
13. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , wherein the step (4) comprises the detailed steps of:
(41) disposing the powder of the scintillator material on the surface of the tubular template;
(42) treating the product of step (41) by a thermal process, so as to make the liquid phase of scintillator material cover the surface of the tubular template;
(43) permeating the liquid phase of scintillator material into the thin film oxidized metal tubes by using a die-casting mold; and
(44) waiting for the solidification of the liquid phase of scintillator material in the thin film oxidized metal tubes to form a scintillator column in each of the thin film oxidized metal tubes.
14. The method for manufacturing the scintillator with sub-micron column structure of claim 1 , wherein the material of the package layer of the step (5) is the material selected from the group consisting of polymer, metal, ceramic, and combinations thereof, and is formed on the surface of the tubular template by a processing way selected from the group consisting of spin coating, vapor deposition, sputtering, and combinations thereof.