Semiconductor device and manufacturing method thereof

1. A method of manufacturing a semiconductor device, the method comprising:

mounting a first semiconductor die on a first surface of an interposer of a plurality of mechanically coupled interposers to electrically connect the first semiconductor die to the interposer;

after the mounting of the first semiconductor die, forming a shock-absorbing member that covers at least all of side surfaces of the first semiconductor die and covers at least a portion of the first surface of the interposer;

forming a semiconductor module comprising the interposer and the first semiconductor die by, at least in part, singulating the interposer from the plurality of mechanically coupled interposers;

mounting the semiconductor module on a first surface of a printed circuit board to connect conductive structures on a second surface of the interposer to a first conductive pattern on the first surface of the printed circuit board;

testing through at least a second conductive pattern on a second surface of the printed circuit board; and

if the testing is passed, then mounting a second semiconductor die to the first surface of the interposer to electrically connect the second semiconductor die to the interposer;

removing at least a portion of the shock-absorbing member prior to said mounting the second semiconductor die; and

forming an underfill, different from the shock-absorbing member, between the first semiconductor die and the interposer.

2. The manufacturing method of claim 1 , wherein the singulating the interposer comprises:

attaching a film to cover at least the first surface of the interposer and the first semiconductor die; and

after said attaching, cutting at the second surface of the interposer to form break lines that segment the interposer into semiconductor modules; and

after said attaching and said cutting, expanding the film to increase a distance between the semiconductor modules.

3. The manufacturing method of claim 1 , comprising, after all electronic component mounting to the interposer and to the printed circuit board is completed, forming conductive balls on the second conductive pattern on the second surface of the printed circuit board.

4. The manufacturing method of claim 1 , wherein the interposer is not a printed circuit board.

5. The manufacturing method of claim 1 , comprising, before the mounting of the first semiconductor die, forming the conductive structures on a second conductive pattern on the second surface of the interposer, the conductive structures comprising conductive bumps.

6. The manufacturing method of claim 1 , wherein said forming the shock-absorbing member comprises forming the shock-absorbing member spaced laterally apart from the first semiconductor die.

7. The manufacturing method of claim 1 , comprising, after the forming of the shock-absorbing member, encapsulating to cover at least side portions of the first semiconductor die and the first surface of the interposer by, at least in part, forming an encapsulant in a space between the first semiconductor die and the shock-absorbing member.

8. The manufacturing method of claim 1 , wherein said mounting the first semiconductor die on the first surface of the interposer comprises coupling conductive pillars between the first semiconductor die and the first surface of the interposer, wherein the conductive pillars are a different type of conductive structure than the conductive structures on the second surface of the interposer.

9. A method of manufacturing a semiconductor device, the method comprising:

mounting a first semiconductor die on a first surface of an interposer of a plurality of mechanically coupled interposers to electrically connect the first semiconductor die to the interposer;

after the mounting of the first semiconductor die, forming a shock-absorbing member that covers at least all of side surfaces of the first semiconductor die and covers at least a portion of the first surface of the interposer;

forming a semiconductor module comprising the interposer and the first semiconductor die by, at least in part, singulating the interposer from the plurality of mechanically coupled interposers;

mounting the semiconductor module on a first surface of a printed circuit board to connect conductive structures on a second surface of the interposer to a first conductive pattern on the first surface of the printed circuit board;

testing through at least a second conductive pattern on a second surface of the printed circuit board;

if the testing is passed, then mounting a second semiconductor die to the first surface of the interposer to electrically connect the second semiconductor die to the interposer; and

removing at least a portion of the shock-absorbing member prior to said mounting the second semiconductor die,

wherein the singulating the interposer comprises:

attaching a first film to cover the shock-absorbing member and a first surface of the first semiconductor die;

attaching a second film to cover the second surface of the interposer;

removing the first film and at least a portion of the shock-absorbing member; and

cutting at the first surface of the interposer to segment the interposer into a plurality of semiconductor modules, comprising the semiconductor module, and expanding the second film to increase a distance between the semiconductor modules.

10. A method of manufacturing a semiconductor device, the method comprising:

mounting a first semiconductor die on a first surface of an interposer of a plurality of mechanically coupled interposers to electrically connect the first semiconductor die to the interposer;

after the mounting of the first semiconductor die, forming a shock-absorbing pad that covers a portion of the first conductive pattern of the interposer that is not connected to the first semiconductor die;

forming a semiconductor module comprising the interposer and the first semiconductor die by, at least in part, singulating the interposer from the plurality of mechanically coupled interposers;

mounting the semiconductor module on a first surface of a printed circuit board to connect conductive structures on a second surface of the interposer to a first conductive pattern on the first surface of the printed circuit board;

testing through at least a second conductive pattern on a second surface of the printed circuit board;

if the testing is passed, then mounting a second semiconductor die to the first surface of the interposer to electrically connect the second semiconductor die to the interposer; and

removing at least a portion of the shock-absorbing pad prior to said mounting the second semiconductor die.

11. The manufacturing method of claim 10 , comprising, after the forming of the shock-absorbing pad, encapsulating to cover at least side portions of the first semiconductor die and the first surface of the interposer by, at least in part, forming an encapsulant in a space between the first semiconductor die and the shock-absorbing pad.

12. The manufacturing method of claim 11 , wherein the singulating the interposer comprises:

cutting the encapsulant covering the first surface of the interposer to segment the encapsulant into semiconductor modules;

attaching a film to cover the encapsulant and the shock-absorbing pad; and

expanding the film to increase the distance between the semiconductor modules.

13. A method of manufacturing a semiconductor device, the method comprising:

mounting a first semiconductor die on a first surface of an interposer of a plurality of mechanically coupled interposers to electrically connect the first semiconductor die to the interposer;

after the mounting of the first semiconductor die, forming a shock-absorbing member that covers at least all of side surfaces of the first semiconductor die and covers at least a portion of the first surface of the interposer;

forming a semiconductor module comprising the interposer and the first semiconductor die by, at least in part, singulating the interposer from the plurality of mechanically coupled interposers;

mounting the semiconductor module on a first surface of a printed circuit board to connect conductive structures on a second surface of the interposer to a first conductive pattern on the first surface of the printed circuit board;

testing through at least a second conductive pattern on a second surface of the printed circuit board;

if the testing is passed, then mounting a second semiconductor die to the first surface of the interposer to electrically connect the second semiconductor die to the interposer; and

removing at least a portion of the shock-absorbing member prior to said mounting the second semiconductor die,

wherein a first surface of the first semiconductor die facing away from the interposer is exposed from the shock-absorbing member.

14. A method of manufacturing a semiconductor device, the method comprising:

mounting a first semiconductor die on a first surface of an interposer of a plurality of mechanically coupled interposers;

forming a shock-absorbing pad that covers a portion of a first conductive pattern of the interposer that is not covered by the first semiconductor die; and

forming a semiconductor module comprising the interposer and the first semiconductor die by, at least in part, singulating the interposer from the plurality of mechanically coupled interposers;

mounting the semiconductor module on a first surface of a substrate to connect conductive structures on a second surface of the interposer to a first conductive pattern on the first surface of the substrate;

testing through at least the substrate;

if the testing is passed, then mounting a second semiconductor die on the first surface of the interposer; and

prior to said mounting the second semiconductor die, removing at least a portion of the shock-absorbing pad.

15. The manufacturing method of claim 14 , wherein the singulating the interposer comprises:

attaching a film to cover at least the first surface of the interposer and the first semiconductor die; and

after said attaching, cutting at the second surface of the interposer to form break lines that segment the interposer into semiconductor modules; and

after said attaching and said cutting expanding the film to increase a distance between the semiconductor modules.

16. The manufacturing method of claim 14 , wherein said forming the shock-absorbing pad comprises printing the shock-absorbing pad.

17. The manufacturing method of claim 14 , wherein said forming the shock-absorbing pad comprises forming the shock-absorbing pad spaced laterally apart from the first semiconductor die.

18. The manufacturing method of claim 14 , comprising, after the forming of the shock-absorbing pad, forming an encapsulant in a space between the first semiconductor die and the shock-absorbing pad, wherein the encapsulant covers at least all of side surfaces of the first semiconductor die and covers at least a portion of the first surface of the interposer.

19. A method of manufacturing a semiconductor device, the method comprising:

mounting a first semiconductor die on a first surface of an interposer of a plurality of mechanically coupled interposers;

forming a shock-absorbing member of a single material that covers at least a portion of side surfaces of the first semiconductor die and covers at least a portion of the first surface of the interposer;

forming a semiconductor module comprising the interposer and the first semiconductor die by, at least in part, singulating the interposer from the plurality of mechanically coupled interposers;

mounting the semiconductor module on a first surface of a substrate;

testing through a conductive pattern of the substrate;

if the testing is passed, then mounting a second semiconductor die on to the first surface of the interposer; and

prior to said mounting the second semiconductor die, removing at least a portion of the shock-absorbing member.

20. The method of claim 19 , wherein singulating the interposer comprises:

attaching a first film to cover the shock-absorbing member and a first surface of the first semiconductor die;

attaching a second film to cover a second surface of the interposer;

removing the first film and the shock-absorbing member; and

cutting at the first surface of the interposer to segment the interposer into a plurality of semiconductor modules, comprising the semiconductor module, and expanding the second film to increase a distance between the semiconductor modules.