Copper wiring forming method with Ru liner and Cu alloy fill

1. A method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate, the method comprising:

forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu;

forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD);

forming a Cu alloy film directly on the Ru film by Physical Vapor Deposition (PVD) to bury the recess;

forming a Cu wiring using the Cu alloy film buried in the recess; and

forming a dielectric film on the Cu wiring,

wherein the forming the Cu alloy film includes: supplying a plasma-generating gas into a processing chamber in which the substrate is received to generate plasma; scattering grains from a target made of the same material as that of the Cu alloy film; allowing the grains to pass through the plasma for ionization of the grains; and applying a bias power such that the ionized grains are attracted onto the substrate.

2. A method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate, the method comprising:

forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu;

forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD);

forming a Cu alloy film directly on the Ru film by Physical Vapor Deposition (PVD) to bury the recess;

forming a Cu wiring using the Cu alloy film buried in the recess; and

forming a dielectric film on the Cu wiring,

wherein the forming the Cu wiring includes: forming an overburdened layer on the Cu alloy film; and polishing the entire surface of the overburdened layer.

3. The method of claim 2 , wherein the overburdened layer is formed by forming the Cu alloy film or a pure Cu film on the Cu alloy film by PVD.

4. The method of claim 2 , wherein the forming the overburdened layer is performed by a Cu plating.

5. The method of claim 2 , wherein after the Cu alloy film is formed, the overburdened layer is formed of the same material as that of the Cu alloy film using a same unit that is used in forming the Cu alloy film.

6. The method of claim 1 , wherein the material of the Cu alloy film is one selected from a group consisting essentially of Cu—Mn, Cu—Al, Cu—Mg, Cu—Ag, Cu—Sn, Cu—Pb, Cu—Zn, Cu—Pt, Cu—Au, Cu—Ni, Cu—Co and Cu—Ti.

7. The method of claim 1 , wherein the barrier film is one selected from a group consisting essentially of a Ti film, TiN film, Ta film, TaN film, two-layered film of Ta/TaN, TaCN film, W film, WN film, WCN film, Zr film, ZrN film, V film, VN film, Nb film, and NbN film.

8. A non-transitory computer-readable storage medium operating in a computer and storing a program for controlling a Cu wiring forming system,

wherein when the program is executed by the computer, the program controls the Cu wiring forming system to perform a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate, the method including:

forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu;

forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD);

forming a Cu alloy film directly on the Ru film by Physical Vapor Deposition (PVD) to bury the recess;

forming a Cu wiring using the Cu alloy film buried in the recess; and

forming a dielectric film on the Cu wiring,

wherein the forming the Cu alloy film includes: supplying a plasma-generating gas into a processing chamber in which the substrate is received to generate plasma; scattering grains from a target made of the same material as that of the Cu alloy film; allowing the grains to pass through the plasma for ionization of the grains; and applying a bias power such that the ionized grains are attracted onto the substrate.