IP Library Granted Patent US 9,699,393
Granted Patent B2
US 9,699,393 · App. 14/316,648 · Granted Jul 4, 2017

Imaging systems for infrared and visible imaging with patterned infrared cutoff filters

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Quick Facts
Patent No.
US 9,699,393
App. No.
14/316,648
Granted
Jul 4, 2017
Kind
B2
Abstract

An image sensor may include a pixel array having visible and infrared imaging pixels for simultaneously detecting light in the visible and infrared spectral ranges. The pixel array may include an array of photodiodes, an array of filter elements formed over the photodiodes, and an array of microlenses formed over the array of filter elements. The filter elements may include infrared cutoff filter elements that block infrared light while passing visible light. The infrared cutoff filter elements may be formed from a patterned layer of infrared blocking material. Each visible imaging pixel includes a portion of the infrared blocking material and a color filter element. Each infrared imaging pixel is aligned with an opening in the infrared blocking material. The opening may be filled with an infrared pass filter element that passes infrared light while blocking visible light.

Claims (26)

1. An image pixel array, comprising:

a plurality of photodiodes, wherein the image pixel array includes visible imaging pixels for detecting light in the visible spectrum and infrared imaging pixels for detecting light in the infrared spectrum;

an array of microlenses, wherein each microlens focuses light onto a respective one of the photodiodes;

a patterned layer of infrared light blocking material interposed between the array of microlenses and the plurality of photodiodes, wherein the infrared light blocking material transmits visible light and blocks infrared light, wherein the patterned layer of infrared light blocking material includes a plurality of openings, and wherein each opening is aligned with a respective one of the infrared imaging pixels; and

a plurality of infrared pass filter elements, wherein each infrared pass filter element is formed in a respective one of the openings in the infrared light blocking material, wherein each infrared pass filter element is completely surrounded by the patterned layer of infrared light blocking material, and wherein each infrared pass filter element blocks visible light and transmits infrared light to a respective photodiode associated with the respective one of the infrared imaging pixels.

2. The image pixel array defined in claim 1 wherein each infrared pass filter element comprises black polymer.

3. The image pixel array defined in claim 1 further comprising:

an array of color filter elements interposed between the array of microlenses and the plurality of photodiodes, wherein each color filter element in the array of color filter elements overlaps a respective portion of the infrared light blocking material.

4. The image pixel array defined in claim 3 wherein the patterned layer of infrared light blocking material is interposed between the array of color filter elements and the plurality of photodiodes.

5. The image pixel array defined in claim 3 wherein the patterned layer of infrared light blocking material is interposed between the array of microlenses and the array of color filter elements.

6. The image pixel array defined in claim 1 wherein the infrared light blocking material comprises photoimageable polymer that passes all wavelengths of visible light.

7. A system, comprising:

a central processing unit;

memory;

input-output circuitry; and

an imaging device having a pixel array, wherein the pixel array comprises:

a plurality of photodiodes, wherein the image pixel array includes visible imaging pixels for detecting light in the visible spectrum and infrared imaging pixels for detecting light in the infrared spectrum;

an array of microlenses, wherein each microlens focuses light onto a respective one of the photodiodes;

a patterned layer of infrared light blocking material interposed between the array of microlenses and the plurality of photodiodes, wherein the infrared light blocking material transmits visible light and blocks infrared light, wherein the patterned layer of infrared light blocking material includes a plurality of openings, and wherein each opening is aligned with a respective one of the infrared imaging pixels; and

a plurality of infrared pass filter elements, wherein each infrared pass filter element is formed in a respective one of the openings in the infrared light blocking material, wherein each infrared pass filter element is completely surrounded by the patterned layer of infrared light blocking material, and wherein each infrared pass filter element blocks visible light and transmits infrared light to a respective photodiode associated with the respective one of the infrared imaging pixels.

8. The system defined in claim 7 wherein each infrared pass filter element comprises black polymer.

9. The system defined in claim 7 further comprising:

an array of color filter elements interposed between the array of microlenses and the plurality of photodiodes, wherein each color filter element in the array of color filter elements overlaps a respective portion of the infrared light blocking material.

10. The system defined in claim 9 wherein the patterned layer of infrared light blocking material is interposed between the array of color filter elements and the plurality of photodiodes.

11. The system defined in claim 9 wherein the patterned layer of infrared light blocking material is interposed between the array of microlenses and the array of color filter elements.

12. The system defined in claim 7 wherein the infrared light blocking material comprises photoimageable polymer that passes all wavelengths of visible light.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2014
From: BOETTIGER, ULRICH; JOHNSON, RICHARD SCOTT
To: APTINA IMAGING CORPORATION
Reel/Frame 033246/0038 →