Method for fabricating interlayer dielectric layer
View Patent ↗A method for fabricating interlayer dielectric (ILD) layer is disclosed. The method includes the steps of first forming a first tensile dielectric layer on a substrate, and then forming a second tensile dielectric layer on the first tensile dielectric layer.
1. A method for fabricating interlayer dielectric (ILD) layer, comprising:
forming a first tensile dielectric layer on a substrate;
forming a metal gate in the first tensile dielectric layer;
forming a second tensile dielectric layer on the first tensile dielectric layer, wherein a carbon content of the second tensile dielectric layer is greater than the carbon content of the first tensile dielectric layer; and
forming a contact plug in the first tensile dielectric layer and the second tensile dielectric layer, wherein the top surface of the contact plug is even with the top surface of the second tensile dielectric layer.
2. The method of claim 1 , further comprising performing a curing process on the first tensile dielectric layer.
3. The method of claim 1 , further comprising performing a curing process on the second tensile dielectric layer.
4. The method of claim 1 , further comprising performing a helium treatment process on the first tensile dielectric layer.
5. The method of claim 1 , further comprising performing a helium treatment process on the second tensile dielectric layer.
6. The method of claim 1 , further comprising performing a planarizing process to partially remove the first tensile dielectric layer before forming the second tensile dielectric layer.
7. The method of claim 6 , wherein the planarizing process comprises a chemical mechanical polishing process.