Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
View Patent ↗Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
1. A silicon compound of the formula:
(R 2 R 3 N) 3-x R 1 x Si—SiR 1 x (NR 2 R 3 ) 3-x
wherein:
R 1 , R 2 , and R 3 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl and C 3 -C 6 cyclo alkyl; and
x is 1 or 2.
2. The silicon compound of claim 1 , wherein x is 2.
3. The silicon compound of claim 1 , wherein R 1 , R 2 , and R 3 are the same.
4. The silicon compound of claim 1 , wherein R 1 , R 2 , and R 3 are selected from the group consisting of C 1 -C 5 alkyl.
5. The silicon compound of claim 1 , of the formula Me 2 (NEt 2 )Si—Si(NEt 2 )Me 2 , Me 2 (NEtMe)Si—Si(NEtMe)Me 2 , or Me 2 (NMe 2 )Si—Si(NMe 2 )Me 2 , wherein Me is methyl and Et is ethyl.
6. The silicon compound of claim 1 , of the formula Me 2 (NEt 2 )Si—Si(NEt 2 )Me 2 .
7. The silicon compound of claim 1 , of the formula Me 2 (NEtMe)Si—Si(NEtMe)Me 2 .
8. The silicon compound of claim 1 , of formula Me 2 (NMe 2 )Si—Si(NMe 2 )Me 2 .
9. A composition comprising a silicon compound of the formula:
(R 2 R 3 N) 3-x R 1 x Si—SiR 1 x (NR 2 R 3 ) 3-x
wherein:
R 1 , R 2 , and R 3 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl and C 3 -C 6 cycloalkyl; and
x is 1 or 2, wherein said silicon compound is in a vapor form.
10. The composition of claim 9 , further comprising an inert carrier gas.
11. The composition of claim 10 , wherein said inert gas is selected from among helium, argon and nitrogen.
12. The composition of claim 9 , further comprising a co-reactant.
13. The composition of claim 12 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.
14. The composition of claim 9 , further comprising a solvent.
15. The composition of claim 14 , wherein the solvent comprises a hydrocarbon solvent.
16. The composition of claim 15 , wherein the hydrocarbon solvent is selected from the group consisting of alkanes, alkenes, alkynes, cycloalkanes, aromatic compounds, benzene, benzene derivatives, alkanols and amines.
17. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions, at a temperature below 600° C., with a vapor of a silicon compound of the formula:
(R 2 R 3 N) 3-x R 1 x Si—SiR 1 x (NR 2 R 3 ) 3-x
wherein:
R 1 , R 2 , and R 3 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl and C 3 -C 6 cycloalkyl; and
x is 1 or 2.
18. The method of claim 17 , wherein R 1 , R 2 , and R 3 are selected from the group consisting of C 1 -C 5 alkyl.
19. The method of claim 17 , wherein the silicon compound is of the formula Me 2 (NEt 2 )Si—Si(NEt 2 )Me 2 , Me 2 (NEtMe)Si—Si(NEtMe)Me 2 , or Me 2 (NMe 2 )Si—Si(NMe 2 )Me 2 , wherein Me is methyl and Et is ethyl.
20. The method of claim 17 , wherein the temperature is below 550° C.