High efficiency apparatus and method for depositing a layer on a three dimensional structure
In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate.
1. A processing apparatus, comprising:
a process chamber configured to house a substrate;
a hybrid source assembly, comprising:
a gas channel coupled to a molecular source; and
a plasma chamber configured to generate a plasma and isolated from the gas channel, which extends through the plasma chamber; and
an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to:
direct an ion beam to the substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and
direct a molecular beam comprising molecular species received from the gas channel to the substrate.
2. The processing apparatus of claim 1 , wherein the plasma chamber is disposed around the gas channel, wherein the plasma chamber is configured to form an annular plasma.
3. The processing apparatus of claim 1 , wherein the extraction assembly comprises an extraction aperture that generates the ion beam, the extraction aperture configured to modify a shape of a plasma sheath adjacent the extraction aperture, wherein the angled ions exit the plasma sheath at the non-zero angle.
4. The processing apparatus of claim 3 , the extraction assembly further comprising at least one additional extraction aperture, wherein the extraction assembly is configured to simultaneously generate a plurality of ion beams that each provides angled ions to the substrate.
5. The processing apparatus of claim 3 , the plurality of ion beams configured to cover the substrate without movement of the substrate.
6. The processing apparatus of claim 3 , wherein the extraction aperture comprises an elongated extraction aperture.
7. The processing apparatus of claim 1 , wherein the extraction assembly comprises a plurality of gas apertures arranged in a two dimensional array, coupled to the gas channel and configured to deliver a plurality of molecular beamlets that form the molecular beam to the substrate.
8. The processing apparatus of claim 7 , the plurality of gas apertures being configured to deliver the molecular beam uniformly over the substrate surface of the substrate without movement of the substrate.
9. The processing apparatus of claim 1 , further comprising a controller to schedule delivery of the ion beam and molecular beam to the substrate in an alternating fashion to form a monolayer comprising a first sub-monolayer of a first species from the ion beam and a second sub-monolayer of a second species from the molecular beam.
10. The processing apparatus of claim 3 , further comprising a pumping apparatus configured to maintain the process chamber at a gas pressure such that the mean free path for gas collisions is less than a separation between the substrate and the extraction assembly when the ion beam and molecular beam are provided to the substrate simultaneously.
11. A processing system, comprising:
a process chamber configured to house a substrate;
a hybrid source assembly, comprising:
a plasma chamber configured to generate a plasma; and
a gas channel extending through the plasma chamber and isolated from the plasma chamber; and
an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to:
direct an ion beam to the substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and
direct a molecular beam comprising molecular species received from the gas channel to the substrate.
12. The processing system of claim 11 , the extraction assembly comprising a plurality of extraction apertures, wherein the extraction assembly is configured to simultaneously generate a plurality of ion beams that each provides angled ions to the substrate, and wherein the plurality of ion beams is configured to cover an entire substrate surface of the substrate without movement of the substrate.
13. The processing system of claim 11 , wherein the extraction assembly comprises a plurality of gas apertures arranged in a two dimensional array, coupled to the gas channel and configured to deliver a plurality of molecular beamlets that form the molecular beam to the substrate.
14. The processing system of claim 11 , further comprising a controller to schedule delivery of the ion beam and molecular beam to the substrate in an alternating fashion to form a monolayer comprising a first sub-monolayer of a first species from the ion beam and a second sub-monolayer of a second species from the molecular beam.
15. The processing system of claim 11 , further comprising a pumping apparatus configured to maintain the evacuate the process chamber at a pressure below 10 mTorr when the ion beam and molecular beam are provided to the substrate, wherein plasma species from the plasma chamber are prevented from entering the gas channel and molecular species from the gas channel are prevented from entering the plasma chamber.