The purpose of the present invention is to provide: a polishing pad which has improved dressing properties, while maintaining the hardness; or a polishing pad which does not easily make a scratch on the surface of an object to be polished, while having improved dressing properties. A polishing pad of the present invention is characterized by having a polishing layer that is formed of a polyurethane resin foam or an unfoamed polyurethane resin, and is also characterized in that the polyurethane resin foam or the unfoamed polyurethane resin contains, as starting material components, (A) an isocyanate component, (B) a polyol component and (C) an aromatic compound that has one hydroxyl group and/or an aromatic compound that has one amino group.
1. A polishing pad comprising a polishing layer that is formed of a polyurethane resin foam having closed cells, wherein the polyurethane resin foam contains, as starting material components, (A) an isocyanate component, (B) a polyol component, and (C) an aromatic compound having one hydroxyl group and/or an aromatic compound having one amino group.
2. A polishing pad comprising a polishing layer that is formed of a polyurethane resin foam, wherein the polyurethane resin foam contains, as starting material components, (A) an isocyanate component, (B) a polyol component, (C) an aromatic compound having one hydroxyl group and/or an aromatic compound having one amino group, and (D) hollow microspheres.
3. A polishing pad comprising a polishing layer that is formed of a polyurethane resin foam having interconnected cells, wherein the polyurethane resin foam contains, as starting material components, (A) an isocyanate component, (B) a polyol component, and (C) an aromatic compound having one hydroxyl group and/or an aromatic compound having one amino group.
4. A polishing pad comprising a polishing layer that is formed of an unfoamed polyurethane resin, wherein the unfoamed polyurethane resin contains, as starting material components, (A) an isocyanate component, (B) a polyol component, and (C) an aromatic compound having one hydroxyl group and/or an aromatic compound having one amino group.
5. The polishing pad according to claim 1 , wherein the aromatic compound having one hydroxyl group is a compound represented by the following general formula (1):
R 1 —(OCH 2 CHR 2 ) n —OH (1)
wherein R 1 is an aromatic hydrocarbon group, R 2 is hydrogen or a methyl group, and n is an integer of 1 to 5.
6. The polishing pad according to claim 1 , wherein the aromatic compound having one amino group is aniline or a derivative thereof.
7. The polishing pad according to claim 1 , wherein the content of the aromatic compound having one hydroxyl group and/or the aromatic compound having one amino group is an amount corresponding to 0.01 to 0.3 equivalent of active hydrogen group (hydroxyl group and/or amino group) of the aromatic compound per 1 equivalent of isocyanate group of the isocyanate component.
8. The polishing pad according to claim 1 , wherein the cut rate is 3.5 to 10 μm/min.
9. The polishing pad according to claim 4 , wherein the cut rate is 2 to 4 μm/min.
10. A method for manufacturing a semiconductor device, comprising the step of polishing a surface of a semiconductor wafer by using the polishing pad according to claim 1 .
11. The polishing pad according to claim 2 , wherein the aromatic compound having one hydroxyl group is a compound represented by the following general formula (1):
R 1 —(OCH 2 CHR 2 ) n —OH (1)
wherein R 1 is an aromatic hydrocarbon group, R 2 is hydrogen or a methyl group, and n is an integer of 1 to 5.
12. The polishing pad according to claim 3 , wherein the aromatic compound having one hydroxyl group is a compound represented by the following general formula (1):
R 1 —(OCH 2 CHR 2 ) n —OH (1)
wherein R 1 is an aromatic hydrocarbon group, R 2 is hydrogen or a methyl group, and n is an integer of 1 to 5.
13. The polishing pad according to claim 4 , wherein the aromatic compound having one hydroxyl group is a compound represented by the following general formula (1):
R 1 —(OCH 2 CHR 2 ) n —OH (1)
wherein R 1 is an aromatic hydrocarbon group, R 2 is hydrogen or a methyl group, and n is an integer of 1 to 5.
14. The polishing pad according to claim 2 , wherein the aromatic compound having one amino group is aniline or a derivative thereof.
15. The polishing pad according to claim 3 , wherein the aromatic compound having one amino group is aniline or a derivative thereof.
16. The polishing pad according to claim 4 , wherein the aromatic compound having one amino group is aniline or a derivative thereof.
17. The polishing pad according to claim 2 , wherein the content of the aromatic compound having one hydroxyl group and/or the aromatic compound having one amino group is an amount corresponding to 0.01 to 0.3 equivalent of active hydrogen group (hydroxyl group and/or amino group) of the aromatic compound per 1 equivalent of isocyanate group of the isocyanate component.
18. The polishing pad according to claim 3 , wherein the content of the aromatic compound having one hydroxyl group and/or the aromatic compound having one amino group is an amount corresponding to 0.01 to 0.3 equivalent of active hydrogen group (hydroxyl group and/or amino group) of the aromatic compound per 1 equivalent of isocyanate group of the isocyanate component.
19. The polishing pad according to claim 4 , wherein the content of the aromatic compound having one hydroxyl group and/or the aromatic compound having one amino group is an amount corresponding to 0.01 to 0.3 equivalent of active hydrogen group (hydroxyl group and/or amino group) of the aromatic compound per 1 equivalent of isocyanate group of the isocyanate component.