Titanium target for sputtering
View Patent ↗A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
1. A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S in total as an additive component, wherein a purity of the target excluding the additive component and gas components is 99.995 mass percent or higher, and a S deposit count in a crystal structure of the titanium target is 100 deposits/mm 2 or less.
2. The titanium target for sputtering according to claim 1 , wherein the purity of the target excluding the additive component and gas components is 99.999 mass percent or higher.
3. The titanium target for sputtering according to claim 1 , wherein an average crystal grain size of the target is 60 μm or less.
4. The titanium target for sputtering according to claim 1 , wherein an average crystal grain size of the target is 30 μm or less.
5. The titanium target for sputtering according to claim 1 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 25 MPa or more.
6. The titanium target for sputtering according to claim 1 , wherein the S deposit count in the crystal structure of the titanium target is 30 deposits/mm 2 or less.
7. The titanium target for sputtering according to claim 1 , wherein the S deposit count in the crystal structure of the titanium target is 10 deposits/mm 2 or less.
8. A high-purity titanium target for sputtering containing 0.5 to less than 3 mass ppm of S in total as an additive component, wherein a purity of the target excluding the additive component and gas components is 99.995 mass percent or higher, and a S deposit count in a crystal structure of the titanium target is 100 deposits/mm 2 or less.
9. The titanium target for sputtering according to claim 8 , wherein the purity of the target excluding the additive component and gas components is 99.999 mass percent or higher.
10. The titanium target for sputtering according to claim 9 , wherein an average crystal grain size of the target is 60 μm or less.
11. The titanium target for sputtering according to claim 9 , wherein an average crystal grain size of the target is 30 μm or less.
12. The titanium target for sputtering according to claim 11 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 25 MPa or more.
13. The titanium target for sputtering according to claim 11 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 30 MPa or more.
14. The titanium target for sputtering according to claim 13 , wherein the S deposit count in the crystal structure of the titanium target is 30 deposits/mm 2 or less.
15. The titanium target for sputtering according to claim 13 , wherein the S deposit count in the crystal structure of the titanium target is 10 deposits/mm 2 or less.
16. The titanium target for sputtering according to claim 8 , wherein an average crystal grain size of the target is 60 μm or less.
17. The titanium target for sputtering according to claim 8 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 25 MPa or more.