IP Library Granted Patent US 9,263,433
Granted Patent B2
US 9,263,433 · App. 14/359,695 · Granted Feb 16, 2016

Integrated circuit, integrated circuit package and method of providing protection against an electrostatic discharge event

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Quick Facts
Patent No.
US 9,263,433
App. No.
14/359,695
Granted
Feb 16, 2016
Kind
B2
Abstract

An integrated circuit comprising a power supply node, a ground node and a gated domain coupled between the power node and the ground node. A Charged Device Model electrostatic discharge protection module is provided for shunting electrical energy of a CDM ESD event away from the gated domain. A gating switch makes an electrical connection in a connected state between the gated domain and at least one of the power node and the ground node. ESD gating control circuitry is coupled to the CDM ESD protection module and controls shunting of energy away from the gated domain by the CDM ESD protection module, thereby avoiding the energy flowing through the gated domain. The ESD gating control circuitry inhibits actuation of the CDM ESD protection module to prevent response to CDM ESD events when the gating domain is powered-up.

Claims (44)

1. An integrated circuit, comprising:

a power supply node connectable to a voltage supply;

a ground node connectable to ground potential;

a gated domain coupled between the power supply node and the ground node;

a Charged Device Model electrostatic discharge protection module for shunting electrical energy of a Charged Device Model electrostatic discharge event away from the gated domain;

a gating switch having a connected state and a disconnected state, the gating switch being arranged to make an electrical connection in the connected state between the gated domain and at least one of the power supply node and the ground node;

electrostatic discharge gating control circuitry operably coupled to the Charged Device Model electrostatic discharge protection module and arranged to control shunting of electrical energy away from the gated domain by the Charged Device Model electrostatic discharge protection module, thereby avoiding the electrical energy flowing through the gated domain; wherein

the electrostatic discharge gating control circuitry is arranged to inhibit actuation of the Charged Device Model electrostatic discharge protection module to prevent response to Charged Device Model electrostatic discharge events when the gating domain is being powered-up.

2. An integrated circuit as claimed in claim 1 , wherein the Charged Device Model electrostatic discharge protection module is a clamp circuit.

3. An integrated circuit as claimed in claim 1 , wherein the electrostatic discharge gating control circuitry comprises a slew rate sensor module coupled to a digital signal generator.

4. An integrated circuit as claimed in claim 3 , wherein the slew rate sensor module is a differentiator.

5. An integrated circuit as claimed in claim 3 , wherein the digital signal generator is an inverter.

6. An integrated circuit as claimed in claim 1 , wherein the electrostatic discharge gating control circuitry comprises an actuation disable module arranged to inhibit actuation of the Charged Device Model electrostatic discharge protection module to prevent response to Charged Device Model electrostatic discharge events when the gating domain is being powered-up.

7. An integrated circuit as claimed in claim 6 , wherein the actuation disable module comprises:

a switching device arranged to prevent the generation of an activation control signal being communicated from the electrostatic discharge gating control circuitry to the Charged Device Model electrostatic discharge protection module.

8. An integrated circuit as claimed in claim 7 , wherein

the electrostatic discharge gating control circuitry comprises an output at which the activation control signal is provided, the Charged Device Model electrostatic discharge protection module having an input operably coupled to the output in order to receive the activation control signal; and

the switching device is operably coupled to the input and the output in order to draw current applied at the output away from the input.

9. An integrated circuit as claimed in claim 6 , wherein the actuation disable module comprises a logic circuit operably coupled to a control terminal of the switching device.

10. An integrated circuit as claimed in claim 9 , wherein the logic circuit is arranged to issue a disable control signal to the switching device in response to detection of a power-up control signal and a continuous supply voltage from the power supply node.

11. An integrated circuit as claimed in claim 1 , wherein

the gated domain has a local ground connected to the ground node and a gated power supply coupled to the power supply node, and

the Charged Device Model electrostatic discharge protection module has a control input for controlling shunting of the electrical energy away from the gated domain between the local ground and the gated power supply.

12. An integrated circuit as claimed in claim 1 , wherein

the Charged Device Model electrostatic discharge protection module has a trigger time constant associated therewith relating to identification of the Charged Device Model electrostatic discharge event, and

the gated domain has a power-up time of the gated domain shorter than the trigger time constant.

13. An integrated circuit as claimed in claim 1 , wherein the electrostatic gating control circuitry is inactive in the absence of the Charged Device Model electrostatic discharge event.

14. An integrated circuit as claimed in claim 7 , wherein the switching device is a Field Effect Transistor.

15. An integrated circuit as claimed in any claim 1 , wherein the Charged Device Model electrostatic discharge protection module comprises a switching device coupled between the power supply node and the ground node.

16. An integrated circuit package, comprising:

a power supply node connectable to a voltage supply;

a ground node connectable to ground potential;

a gated domain coupled between the power supply node and the ground node;

a Charged Device Model electrostatic discharge protection module for shunting electrical energy of a Charged Device Model electrostatic discharge event away from the gated domain;

a gating switch having a connected state and a disconnected state, the gating switch being arranged to make an electrical connection in the connected state between the gated domain and at least one of the power supply node and the ground node;

electrostatic discharge gating control circuitry operably coupled to the Charged Device Model electrostatic discharge protection module and arranged to control shunting of electrical energy away from the gated domain by the Charged Device Model electrostatic discharge protection module, thereby avoiding the electrical energy flowing through the gated domain; wherein

the electrostatic discharge gating control circuitry is arranged to inhibit actuation of the Charged Device Model electrostatic discharge protection module to prevent response to Charged Device Model electrostatic discharge events when the gating domain is being powered-up;

a housing which houses at least part the integrated circuit;

a first pin coupled to the power supply node; and

a second pin coupled to the ground node.

17. A method of providing an integrated circuit with protection against a Charged Device Model electrostatic discharge event that avoids false triggering in response to powering-up of a gated domain by a gating switch, the method comprising:

powering-up the gated domain by making an electrical connection between the gated domain and at least one of a power supply node and a ground node;

controlling shunting of electrical energy away from the gated domain when a Charge Device Model electrostatic discharge event occurs, thereby avoiding the electrical energy flowing through the gated domain; and

inhibiting response to Charged Device Model electrostatic discharge events when the gating domain is being powered-up.

Assignments (19)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2018
From: NXP USA, INC.
To: VLSI TECHNOLOGY LLC
Reel/Frame 045084/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0903 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 1, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 033462/0267 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 1, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 033462/0293 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 1, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 033460/0337 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2014
From: SOFER, SERGEY; NEIMAN, VALERY; PRIEL, MICHAEL
To: FREESCALE SEMICONDUCTOR INC.
Reel/Frame 032958/0384 →