Scanning ion microscope and secondary particle control method
View Patent ↗The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.
1. A scanning ion microscope comprising:
an ion source;
a specimen stage configured to hold a specimen;
an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;
an ion controller configured to control the ion optical system;
a secondary particle detector configured to detect a secondary particle emitted from the specimen; and
an image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:
a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen;
a potential control unit configured to control a first electric potential, which is an electric potential of the support member; and
an electrode potential control unit configured to control a second electric potential, which is an electric potential of an electrode that is disposed between the thin film and the specimen, the electrode having an opening therein; and
wherein secondary electrons emitted from the thin film are prevented from entering the secondary particle detector by maintaining the second electric potential relatively negative with respect to the first electric potential.
2. The scanning ion microscope according to claim 1 , wherein
the thin film has electrical-conductivity at least when the thin film is irradiated with the ions.
3. The scanning ion microscope according to claim 1 , wherein
the scanning ion microscope further comprises a thin film moving unit configured to move the thin film with respect to an optical axis of the ion optical system.
4. The scanning ion microscope according to claim 1 , further comprising means for shielding mechanically or by electromagnetic field at least a part of secondary particles emitted from the thin film on a side opposite to the specimen across the thin film.
5. The scanning ion microscope according to claim 1 , wherein
ionic liquid is coated on the thin film.
6. The scanning ion microscope according to claim 1 , wherein
the thin film comprises a mesh-structured object.
7. The scanning ion microscope according to claim 1 , wherein
the thin film comprises a crystalline body and the scanning ion microscope further comprises a means for inclining the thin film with respect to an axis of the ion optical system.
8. The scanning ion microscope according to claim 1 , wherein
energy of uncharged particles emitted from the thin film is reduced by maintaining the first electric potential relatively positive with respect to the electric potential of the specimen.
9. The scanning ion microscope according to claim 4 , wherein
an electric current detector is connected to the means for shielding, and
the electric current detector monitors electric current of secondary electrons emitted from the thin film and detects an abnormality of the thin film when the electric current is smaller than or equal to a predetermined value.
10. The scanning ion microscope according to claim 1 , wherein
the potential control unit monitors an electric current flowing into the thin film and detects an abnormality of the thin film when the electric current is greater than or equal to a predetermined value.
11. The scanning ion microscope according to claim 3 , wherein
the thin film moving unit makes a retreat of the thin film from an optical axis of the ion optical system.
12. A secondary particle control method using a scanning ion microscope including:
an ion source;
a specimen stage configured to hold a specimen;
an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;
an ion controller configured to control the ion optical system;
a secondary particle detector configured to detect a secondary particle emitted from the specimen; and
an image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:
a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen;
a first potential control unit configured to control a first electric potential, which is an electric potential of the support member; and
a second potential control unit configured to control a second electric potential, which is an electric potential of an electrode that is disposed between the thin film and the specimen, the electrode having an opening therein,
the method comprising preventing secondary electrons emitted from the thin film from entering into the secondary particle detector by maintaining the second electric potential relatively negative with respect to the first electric potential.