Co—Cr—Pt-based sputtering target and method for producing same
View Patent ↗A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.
1. A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from non-Cr-based regions in which metal Cr does not exist and where oxides including at least Ti oxide are dispersed in Co, and a Cr-based region where oxides other than Ti oxide are dispersed in Cr or Co—Cr, and wherein the non-Cr-based regions are scattered in the Cr-based region.
2. A sputtering target containing, as metal components, 0.5 to 30 mol % of Cr, 0.5 to 30 mol % of Pt, and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from non-Cr-based regions in which metal Cr does not exist and where oxides including at least Ti oxide are dispersed in Co or Co—Pt, and a Cr-based region where oxides other than Ti oxide are dispersed in one or more types of phases of Co—Cr, Cr—Pt, and Co—Cr—Pt, and wherein the non-Cr-based regions are scattered in the Cr-based region.
3. The sputtering target according to claim 2 , wherein the two or more types of oxides include oxides of one or more types of elements selected from B, Mg, Al, Si, Cr, Zr, Nb, and Ta.
4. The sputtering target according to claim 3 , wherein a content of the oxides in the sputtering target is, based on a volume ratio, 20% or more and less than 50%.
5. The sputtering target according to claim 4 , wherein the sputtering target contains, as metal components, one or more types of elements selected from B, Cu, Mo, Ru, Ta, and W.
6. A method of producing a sputtering target comprising the steps of:
mixing a metal powder and an oxide powder including Ti oxide and pressing and sintering a resulting mixed powder A in a vacuum or an inert gas atmosphere to produce a sintered compact A,
pulverizing and sieving the sintered compact A to produce a sintered compact powder A corresponding to non-Cr-based regions in which metal Cr does not exist and where oxides including at least Ti oxide are dispersed in Co or Co—Pt,
mixing a metal powder and oxide powders other than Ti oxide to produce a mixed powder B corresponding to a Cr-based region where oxides other than Ti oxide are dispersed in one or more types of phases selected from the group consisting of Cr, Co—Cr, Cr—Pt, and Co—Cr—Pt, and
mixing the sintered compact powder A and the mixed powder B, and thereafter pressing and sintering a resulting mixed powder in a vacuum or an inert gas atmosphere to produce a secondary sintered compact to be used as a target material;
wherein the secondary sintered compact contains, as metal components, 0.5 to 45 mol % of Cr and remainder being Co or 0.5 to 30 mol % of Cr, 0.5 to 30 mol % of Pt, and remainder being Co, and contains, as non-metal components, two or more types of oxides including Ti oxide;
wherein a structure of the secondary sintered compact is configured from non-Cr-based regions in which metal Cr does not exist and where oxides including at least Ti oxide are dispersed in Co or Co—Pt, and a Cr-based region where oxides other than Ti oxide are dispersed in one or more types of phases of Cr, Co—Cr, Cr—Pt or Co—Cr—Pt; and
wherein the non-Cr-based regions of the secondary sintered compact are scattered in the Cr-based region of the secondary sintered compact.
7. The method of producing a sputtering target according to claim 6 , wherein a grain size of the sintered compact powder A is 20 to 200 μm.
8. The sputtering target according to claim 2 , wherein a content of the oxides in the sputtering target is, based on a volume ratio, 20 % or more and less than 50%.
9. The sputtering target according to claim 2 , wherein the sputtering target contains, as metal components, one or more types of elements selected from B, Cu, Mo, Ru, Ta, and W.
10. The sputtering target according to claim 1 , wherein the two or more types of oxides include oxides of one or more types of elements selected from B, Mg, Al, Si, Cr, Zr, Nb, and Ta.
11. The sputtering target according to claim 10 , wherein a content of the oxides in the sputtering target is, based on a volume ratio, 20% or more and less than 50%.
12. The sputtering target according to claim 11 , wherein the sputtering target contains, as metal components, one or more types of elements selected from B, Cu, Mo, Ru, Ta, and W.
13. The sputtering target according to claim 1 , wherein a content of the oxides in the sputtering target is, based on a volume ratio, 20% or more and less than 50%.
14. The sputtering target according to claim 1 , wherein the sputtering target contains, as metal components, one or more types of elements selected from B, Cu, Mo, Ru, Ta, and W.