Method for manufacturing semiconductor device, method for processing substrate, substrate processing device and recording medium
In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas.
1. A method of manufacturing a semiconductor device, comprising:
loading a substrate into a processing chamber;
forming at least two kinds of films including a nitride film and an oxide film on the substrate within the processing chamber;
unloading the substrate having the films formed thereon from the processing chamber; and
after unloading the substrate, etching by supplying an etching gas into the processing chamber without any substrate within the processing chamber, the act of etching including a first etching and a second etching,
the act of the first etching including a cleaning of supplying a fluorine-containing gas activated by plasma excitation as the etching gas into the processing chamber, and
the act of the second etching including a cleaning of supplying a fluorine-containing gas activated by heat without the plasma excitation as the etching gas into the processing chamber.
2. The method of claim 1 , wherein, in the act of the first etching, before and/or after the plasma-excited NF 3 gas is supplied into the processing chamber, a plasma-excited inert gas or a plasma-excited reactant gas is supplied into the processing chamber.
3. The method of claim 1 , wherein, in the act of the first etching, plasma is intermittently generated while the reactant gas is continuously supplied.
4. The method of claim 1 , wherein, in the act of the first etching, plasma is intermittently generated while the reactant gas is intermittently supplied.
5. The method of claim 1 , wherein the act of forming the films includes forming a silicon nitride film on the substrate; and forming a silicon oxide film on the substrate.
6. The method of claim 1 , wherein the act of forming the films includes a first oxide film forming in which a silicon oxide film is formed on the substrate; a nitride film forming in which a silicon nitride film is formed on the substrate; and a second oxide film forming in which a silicon oxide film is formed on the substrate.
7. The method of claim 1 , wherein the act of the first etching includes cleaning of using an NF 3 which is activated by plasma excitation and the act of the second etching includes cleaning of using an NF 3 which is thermally activated by increasing a heating temperature of the processing chamber without plasma-exciting the NF 3 , to become higher than a temperature of the first etching.
8. The method of claim 1 , wherein, the etching gas is at least one selected from the group consisting of a halogen-containing gas including fluorine (F).
9. A method of processing a substrate, comprising:
loading one or more substrates into a processing chamber;
forming at least two kinds of films including a nitride film and an oxide film on the substrate within the processing chamber;
unloading the one or more substrates having the films formed thereon from the processing chamber; and
after unloading all the substrates, etching by supplying an etching gas into the processing chamber without any substrate within the processing chamber, the act of etching including a first etching and a second etching,
the act of the first etching including a cleaning of supplying a fluorine-containing gas activated by plasma excitation as the etching gas into the processing chamber, and
the act of the second etching including a cleaning of supplying a fluorine-containing gas activated by heat without the plasma excitation as the etching gas into the processing chamber.
10. The method of claim 9 , wherein, the etching gas is at least one selected from the group consisting of a halogen-containing gas including fluorine (F).
11. A method for manufacturing a semiconductor device, comprising:
loading a substrate into a processing chamber;
forming a silicon nitride film and a silicon oxide film on a surface of the substrate by supplying at least two kinds of process gases into the processing chamber;
unloading the substrate having the silicon nitride film formed thereon from the processing chamber; and
after unloading the substrate and before loading a subsequent substrate on which a film is to be formed into the processing chamber, supplying a plasma-excited fluorine-containing gas as an etching gas into the processing chamber, and supplying a heated fluorine-containing gas without the plasma excitation as an etching gas into the processing chamber.
12. The method of claim 11 , further comprising performing etching one time every end of the acts of loading the substrate, forming the silicon nitride film, and unloading the substrate.
13. The method of claim 11 , further comprising, before and/or after the act of supplying the plasma-excited fluorine-containing gas for etching into the processing chamber, supplying a plasma-excited inert gas or a plasma-excited ammonia gas into the processing chamber.
14. The method of claim 11 , wherein, during etching, plasma is intermittently generated while the fluorine-containing gas is continuously supplied.
15. The method of claim 11 , wherein, during etching, plasma is intermittently generated while the fluorine-containing gas is intermittently supplied.
16. The method of claim 11 , wherein, the etching gas is at least one selected from the group consisting of a halogen-containing gas including fluorine (F).