Metallic material for electronic components, and connector terminals, connectors and electronic components using same
View Patent ↗The present invention provides a metallic material for electronic components having a low degree of whisker formation and a high durability, and connector terminals, connectors and electronic components using the metallic material. The metallic material for electronic components includes: a base material; on the base material, an lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; on the lower layer, an upper layer constituted with an alloy composed of one or both of Sn and In (constituent elements A) and one or two or more of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B), wherein the thickness of the lower layer is 0.05 μm or more; the thickness of the upper layer is 0.005 μm or more and 0.6 μm or less; and in the upper layer, the relation between the ratio, the constituent elements A/(the constituent elements A+the constituent elements B) [mass %] (hereinafter, referred to as the proportion of Sn+In) and the plating thickness [μm] is given by plating thickness≦8.2×(proportion of Sn+In) −0.66 [herein, (the proportion of Sn+In)≧10 mass %].
1. A metallic material for electronic components excellent in low degree of whisker formation, low degree of insertion/extraction force, fine sliding wear resistance and gas corrosion resistance, comprising:
a base material;
on the base material, a lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; and
on the lower layer, an upper layer constituted with an alloy of one or both of Sn and In (constituent elements A) and one or two or more selected from Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B),
wherein the thickness of the lower layer is 0.05 μm or more;
the thickness of the upper layer is 0.005 μm or more and 0.6 μm or less; and
in the upper layer, the relation between the constituent element(s) A/(the constituent element(s) A+the constituent element(s) B) [mass %] (hereinafter, referred to as the proportion of Sn+In) and the plating thickness [μm] is given by
plating thickness≦8.2×(proportion of Sn+In) −0.66 [here, (proportion of Sn+In)≧10 mass %].
2. A metallic material for electronic components excellent in low degree of whisker formation, low degree of insertion/extraction force, fine sliding wear resistance and gas corrosion resistance, comprising:
a base material;
on the base material, a lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; and
on the lower layer, an upper layer constituted with an alloy of one or both of Sn and In (constituent elements A) and one or two or more selected from Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B),
wherein the plating deposition amount of the lower layer is 0.03 mg/cm 2 or more;
the plating deposition amount of the upper layer is 7 μg/cm 2 or more and 600 μg/cm 2 or less; and
in the upper layer, the relation between the constituent element(s) A/(the constituent element(s) A+the constituent element(s) B) [mass %] (hereinafter, referred to as the proportion of Sn+In) and the plating deposition amount [μg/cm 2 ] is given by
plating deposition amount≦8200×(proportion of Sn+In) −0.66 [here, (proportion of Sn+In)≧10 mass %].
3. The metallic material for electronic components excellent in insertion-extraction resistance, according to claim 1 or 2 , wherein the plating thickness of the upper layer is 0.05 μm or more.
4. The metallic material for electronic components excellent in insertion-extraction resistance, according to claim 1 or 2 , wherein the plating deposition amount of the upper layer is 40 μg/cm 2 or more.
5. The metallic material for electronic components excellent in heat resistance and solder wettability, according to claim 1 or 2 ,
wherein the relation between the proportion of Sn+In [mass %] and the plating thickness [μm] of the upper layer is given by
plating thickness≧0.03× e 0.015×(proportion of Sn+In) .
6. The metallic material for electronic components excellent in heat resistance and solder wettability, according to claim 1 or 2 , wherein the relation between the proportion of Sn+In [mass %] and the plating deposition amount [μg/cm 2 ] of the upper layer is given by
plating deposition amount≧27.8× e 0.017×(proportion of Sn+In) .
7. The metallic material for electronic components according to claim 1 or 2 , wherein the upper layer is formed by the diffusion of the constituent element(s) A and the constituent element(s) B under the conditions that a film of the constituent element(s) B is formed and then a film of the constituent element(s) A is formed on the lower layer.
8. The metallic material for electronic components according to claim 7 , wherein the diffusion is performed by heat treatment.
9. The metallic material for electronic components according to claim 1 or 2 , wherein the constituent elements A in the upper layer is 50 mass % or more in terms of the total content of Sn and In, and the upper layer further includes one or two or more metals selected from the group consisting of As, Bi, Cd, Co, Cr, Cu, Fe, Mn, Mo, Ni, Pb, Sb, W and Zn, as the alloy components.
10. The metallic material for electronic components according to claim 1 or 2 , wherein the constituent elements B in the upper layer is 50 mass % or more in terms of the total content of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and the upper layer further includes one or two or more metals selected from the group consisting of Bi, Cd, Co, Cu, Fe, In, Mn, Mo, Ni, Pb, Sb, Se, Sn, W, Tl and Zn, as the alloy components.
11. The metallic material for electronic components according to claim 1 or 2 , wherein the alloy composition of the lower layer comprises Ni, Cr, Mn, Fe, Co and Cu in the total amount of these of 50 mass % or more, and further comprises one or two or more selected from the group consisting of B, P, Sn and Zn.
12. The metallic material for electronic components according to claim 1 or 2 , wherein the indentation hardness measured from the surface of the upper layer is 1000 MPa or more.
13. The metallic material for electronic components, having high bending processability, according to claim 1 or 2 , wherein the indentation hardness measured from the surface of the upper layer is 10000 MPa or less.
14. The metallic material for electronic components according to claim 1 or 2 , wherein on the basis of a depth analysis performed by XPS (X-ray photoelectron spectroscopy), the position (D 1 ) indicating the highest value of the atomic concentration (at %) of Sn or In of the constituent elements A of the upper layer, the position (D 2 ) indicating the highest value of the concentration (at %) of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir of the constituent elements B of the upper layer, and the position (D 3 ) indicating the highest value of the atomic concentration (at %) of Ni, Cr, Mn, Fe, Co or Cu of the lower layer are located in the order of D 1 , D 2 and D 3 from the outermost surface.
15. A connector terminal using, in the contact portion thereof, the metallic material for electronic components according to claim 1 or 2 .
16. An FFC terminal using, in the contact portion thereof, the metallic material for electronic components according to claim 1 or 2 .
17. An FPC terminal using, in the contact portion thereof, the metallic material for electronic components according to claim 1 or 2 .
18. An electronic component using, in the electrode thereof for external connection, the metallic material for electronic components according to claim 1 or 2 .
19. An electronic component using the metallic material for electronic components according to claim 1 or 2 , in a push-in type terminal thereof for fixing a board connection portion to a board by pushing the board connection portion into the through hole formed in the board, wherein a female terminal connection portion and the board connection portion are provided respectively on one side and the other side of a mounting portion to be attached to a housing.