Silylene compositions and methods of use thereof
View Patent ↗A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R 1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO 2 , Si 3 N 4 , SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.
1. A silicon precursor composition comprising a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from H, C 1 -C 12 alkyl, silylalkyl, silylamide, alkylamide, dialkylamide, and aryl;
(ii) amidinate silylenes; and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl, wherein the silylene compound comprises bis (N-t-amyl) ethylenediamine silylene.
2. A silicon precursor composition comprising a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from organo substituents,
(ii) amidinate silylenes, and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl, wherein the silylene compound comprises an amidinate silylene.
3. The silicon precursor composition of claim 2 , wherein the silylene compound comprises bis (N-i-propyl)-t-butyl-amidinate bis(trimethylsilyl)amido silylene.
4. A silicon precursor composition comprising a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from organo substituents,
(ii) amidinate silylenes, and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl,
wherein the silylene compound comprises a bis-amidinate silylene.
5. The silicon precursor composition of claim 4 , wherein the bis(amidinate) silylene has the formula
wherein each R is independently selected from organo substituents.
6. The silicon precursor composition of claim 5 , wherein each R is independently selected from H, C 1 -C 12 alkyl, silylalkyl, silylamide, alkylamide, dialkylamide, and aryl.
7. A method of maintaining amorphous character of an amorphous hafnium oxide or zirconium oxide material during elevated temperature processing thereof, said method comprising incorporating silicon in said amorphous hafnium oxide or zirconium oxide material from a silicon precursor composition comprising a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from organo substituents,
(ii) amidinate silylenes; and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl.
8. A method of making a capacitor, comprising:
forming a bottom electrode;
depositing on the bottom electrode an HfSiO amorphous film by a vapor deposition process, using a silicon precursor composition, an organohafnium precursor, and an oxic medium in the vapor deposition process; and
forming a top electrode on the HfSiO amorphous film, wherein the silicon precursor composition comprises a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from organo substituents;
(ii) amidinate silylenes; and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl.
9. The method of claim 8 , further comprising annealing the HfSiO amorphous film to effect crystallization thereof.
10. The method of claim 9 , wherein said annealing is conducted at temperature in a range of from 500° C. to 1200° C.
11. A method of making a ferroelectric field effect transistor, comprising:
forming a base comprising source and drain regions;
depositing on the base, in contact with the source and drain regions, an oxide layer;
forming on the oxide layer a HfSiO material by a vapor deposition process, using a silicon precursor composition, an organohafnium precursor, and an oxic medium in the vapor deposition process;
depositing a metal-containing layer on the HfSiO material; and
annealing the HfSiO material to form ferroelectric HfSiO material,
wherein the silicon precursor composition comprises a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from organo substituents;
(ii) amidinate silylenes; and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl.
12. The method of claim 11 , wherein the oxide layer comprises SiO 2 .
13. The method of claim 11 , wherein the metal-containing layer comprises TiN.
14. The method of claim 11 , wherein the organohafnium precursor comprises tetrakis-dialkylamino hafnium.
15. The method of claim 11 , wherein the oxic medium comprises ozone.
16. The method of claim 11 , wherein the annealing is carried out to form the ferroelectric HfSiO material comprising an orthorhombic phase.
17. A method of sealing porosity in a substrate comprising porous silicon oxide, comprising volatilizing a silicon precursor composition to produce corresponding precursor vapor, and contacting the precursor vapor with the substrate under vapor deposition conditions including (i) temperature in a range of from 50° C. to 200° C. and (ii) presence of oxidant, to deposit silicon oxide in said porosity of the substrate for sealing thereof,
wherein the silicon precursor composition comprises a silylene compound selected from among:
(i) silylene compounds of the formula:
wherein each of R and R 1 is independently selected from organo substituents;
(ii) amidinate silylenes, and
(iii) bis(amidinate) silylenes,
wherein when each R 1 is H, each R is not butyl.
18. The method of claim 17 , wherein the oxidant comprises water or ozone.