Ruthenium sputtering target and ruthenium alloy sputtering target
View Patent ↗A ruthenium sputtering target, wherein a Si content is 10 to 100 wtppm, a total content of unavoidable impurities excluding gas components is 50 wtppm or less, and a remainder is Ru. By suppressing the crystal growth of ruthenium or a ruthenium alloy and reducing the generation of coarse crystal grains, arcing that occurs during sputtering is minimized, particle generation is reduced, and yield is improved.
1. A ruthenium sputtering target having a sintered compact structure produced from compacted and sintered powder and a composition consisting of Si in a content of 35 wtppm or more and 94 wtppm or less, Ru, and impurities excluding gas components, Ru, and Si in a total content of 50 wtppm or less, the sintered compact structure having an average crystal grain size of 5 to 100 μm and a maximum crystal grain size of 500 μm or less.
2. The ruthenium sputtering target according to claim 1 , wherein the total content of said impurities excluding gas components, Ru, and Si is 10 wtppm or less.
3. A ruthenium alloy sputtering target, wherein the ruthenium alloy sputtering target has a sintered compact structure produced from compacted and sintered powder and a composition consisting of Si in a content of 40 wtppm or more and 90 wtppm or less, one or more alloying elements selected from the group consisting of Ta, Nb, Mo, W, and Mn in a total content of 3 to 35 at %, Ru, and impurities excluding gas components, Ru, Si, and said one or more alloying elements of 50 wtppm or less, and wherein the sintered compact structure has an average crystal grain size of 5 to 100 μm and a maximum crystal grain size of 500 μm or less.
4. The ruthenium alloy sputtering target according to claim 3 , wherein the total content of impurities excluding gas components, Ru, Si, and said one or more alloying elements is 10 wtppm or less.