Substrate for printed electronics and photonic curing process
View Patent ↗A coating layer 12 is formed on a base film 10 by heat resistant resin having a Tg (glass transition temperature) of 120° C. or more, and more preferably 200° C. or more, and a functional thin film 14 is produced by printing ink composite including conductive particles on a surface of the coating layer 12 and thereby forming an ink layer. This functional thin film 14 is sintered by heating performed by photo irradiation, and a conductive layer is formed thereby.
1. A substrate film for photo irradiation, comprising
a base film, and
a coating layer (heat resistant layer) formed on the base film,
wherein the coating layer is formed of a heat resistant resin having a higher Tg than the base film, has a Tg of higher than 200° C., has a surface configured to receive a functional thin film sintered by photo irradiation, and has a thickness of 0.1 to 10 μm.
2. The substrate film according to claim 1 , wherein the heat resistant resin that forms the coating layer is a crosslinked three-dimensional resin.
3. The substrate film according to claim 1 , wherein the heat resistant resin that forms the coating layer contains 5 to 80 mass % of at least one filler selected from the group consisting of silica, alumina, titania and zirconia, the filler having 500 nm or less average particle diameter d50 measured by dynamic light scattering.
4. The substrate film according to claim 1 , wherein the base film is a polyethylene terephthalate film, polyethylene naphthalate film, polycarbonate film, polyacrylate film, polyolefin film, polycycloolefin film, or polyimide film, or paper.
5. The substrate film according to claim 1 , wherein the base film has a thickness of 10 μm to 3 mm.
6. A substrate comprising
a base film,
a coating layer (heat resistant layer) formed on the base film,
wherein the coating layer is formed of a heat resistant resin having a higher Tg than the base film and has a thickness of 0.1 to 10 μm, and
a functional thin layer (pattern) sintered by photo irradiation on the coating layer.
7. The substrate according to claim 6 , wherein the functional thin layer comprises at least one selected from the group consisting of gold, silver, copper, aluminum, nickel, cobalt, oxides thereof, graphite, graphene, carbon nanotube, zinc oxide, tin oxide, indium tin oxide, and polysilane.
8. The substrate according to claim 6 , wherein the functional thin layer is formed by any one selected from the group consisting of silicon, germanium, tin, lead, arsenic, antimony, bismuth, gallium, indium, thallium, zinc, cadmium, selenium, tellurium, and oxides or complex oxides thereof.
9. A sintering method comprising
preparing a substrate film having a base film and a coating layer (heat resistant layer) formed on the base film, wherein the coating layer is formed of a heat resistant resin having a higher Tg than the base film,
forming a functional thin film on the surface of the coating layer, and
sintering the functional thin film by photo irradiation.
10. The sintering method according to claim 9 , wherein the light to be irradiated is pulsed light having a wavelength of 200 to 3000 nm.
11. The sintering method according to claim 9 , wherein the functional thin film is produced by printing an ink composite containing at least one selected from the group consisting of gold, silver, copper, aluminum, nickel, cobalt, oxides thereof, graphite, graphene, carbon nanotube, zinc oxide, tin oxide, indium tin oxide, and polysilane.
12. The sintering method according to claim 9 , wherein the functional thin film is formed by sputtering targeting silicon, germanium, tin, lead, arsenic, antimony, bismuth, gallium, indium, tallium, zinc, cadmium, selenium, tellurium, and oxides and complex oxides thereof.
13. The substrate according to claim 6 , wherein the heat resistant resin has a Tg (glass transition temperature) of 120° C. or more.
14. The substrate according to claim 6 , wherein the heat resistant resin that forms the coating layer is a crosslinked three-dimensional resin.
15. The substrate according to claim 2 , wherein the heat resistant resin that forms the coating layer has a Tg of higher than 200° C.
16. The substrate according to claim 6 , wherein the heat resistant resin that forms the coating layer contains 5 to 80 mass % of at least one filler selected from the group consisting of silica, alumina, titania and zirconia, the filler having 500 nm or less average particle diameter d50 measured by dynamic light scattering.
17. The substrate according to claim 6 , wherein the base film is a polyethylene terephthalate film, polyethylene naphthalate film, polycarbonate film, polyacrylate film, polyolefin film, polycycloolefin film, or polyimide film, or paper.
18. The substrate according to claim 6 , wherein the base film has a thickness of 10 μm to 3 mm.
19. The sintering method according to claim 9 , wherein the heat resistant resin has a Tg (glass transition temperature) of 120° C. or more.
20. The sintering method according to claim 9 , wherein the heat resistant resin that forms the coating layer is a crosslinked three-dimensional resin.
21. The sintering method according to claim 9 , wherein the heat resistant resin that forms the coating layer has a Tg of higher than 200° C.
22. The sintering method according to claim 9 , wherein the heat resistant resin that forms the coating layer contains 5 to 80 mass % of at least one filler selected from the group consisting of silica, alumina, titania and zirconia, the filler having 500 nm or less average particle diameter d50 measured by dynamic light scattering.
23. The sintering method according to claim 9 , wherein the base film is a polyethylene terephthalate film, polyethylene naphthalate film, polycarbonate film, polyacrylate film, polyolefin film, polycycloolefin film, or polyimide film, or paper.
24. The sintering method according to claim 9 , wherein the coating layer has a thickness of 0.1 to 10 μm.
25. The sintering method according to claim 9 , wherein the base film has a thickness of 10 μm to 3 mm.