ROOM-TEMPERATURE BONDING APPARATUS AND ROOM-TEMPERATURE BONDING METHOD
A room-temperature bonding apparatus includes a vacuum chamber; a first holding mechanism; a second holding mechanism; a beam source; and a pressure bonding mechanism which bonds first and second substrates. At least one of the above members is formed of a first material which is difficult to be sputtered or which does not obstruct a function of a device obtained by bonding the first and second substrates even if the first material is in the bonding surfaces, or a surface of the at least one is covered with the first material.
1 . A room-temperature bonding apparatus comprising:
a vacuum chamber;
a first holding mechanism disposed in said vacuum chamber to hold a first substrate;
a second holding mechanism disposed in said vacuum chamber to hold a second substrate;
a beam source disposed in said vacuum chamber to irradiate an activation beam to a bonding surface of the first substrate and a bonding surface of the second substrate; and
a pressure bonding mechanism disposed in said vacuum chamber to bond the first and second substrates such that the bonding surface of the first and second substrates irradiated with the activation beam are opposed to each other,
wherein at least one of said vacuum chamber, said first holding mechanism, said second holding mechanism, said beam source and said pressure bonding mechanism is formed of a first material which is difficult to be sputtered with the activation beam or which does not obstruct a function of a device obtained by bonding the first substrate and the second substrate even if the first material is in the bonding surfaces, or a surface of said at least one is covered with a covering member formed of the first material.
2 . The room-temperature bonding apparatus according to claim 1 , wherein the first material comprises an element of a main component of the first substrate as an element of a main component of the first material.
3 . The room-temperature bonding apparatus according to claim 2 , wherein the first substrate is a silicon substrate, and the first material comprises silicon oxide.
4 . The room-temperature bonding apparatus according to claim 1 , wherein the first material comprises an insulator.
5 . The room-temperature bonding apparatus according to claim 1 , wherein the covering member comprises a layer covering an inner surface of said vacuum chamber irradiated with the activation beam.
6 . The room-temperature bonding apparatus according to claim 1 , further comprising:
a target holding mechanism disposed in said vacuum chamber to hold at least a target,
wherein said target holding mechanism has a plurality of areas in which a plurality of said targets can be arranged, and
wherein pseudo targets of the first material are arranged in areas, in which any targets are not arranged, of the plurality of areas.
7 . The room-temperature bonding apparatus according to claim 6 , wherein said target holding mechanism is formed of the first material, or a surface of said target holding mechanism irradiated with the activation beam is covered with said covering member of the first material,
wherein said beam source irradiates the activation beam to the bonding surfaces of the first and second substrates and said target holding mechanism, and
wherein said pressure bonding mechanism bonds the first and second substrates to which a material of the target adheres.
8 . The room-temperature bonding apparatus according to claim 1 , wherein an existence density of impurity which exists in the bonding surfaces of the first and second substrates is less than 1 × 10 14 atoms/cm 2 .
9 . A room-temperature bonding method comprising:
providing a room-temperature bonding apparatus which comprises a vacuum chamber; a first holding mechanism disposed in said vacuum chamber to hold a first substrate; a second holding mechanism disposed in said vacuum chamber to hold a second substrate; a beam source disposed in said vacuum chamber to irradiate an activation beam to bonding surfaces of the first and second substrates; and a pressure bonding mechanism disposed in said vacuum chamber to bond the first substrate and the second substrate such that the bonding surfaces of the first and second substrates irradiated with the activation beam are opposed to each other,
wherein at least one of said vacuum chamber, said first holding mechanism, said second holding mechanism, said beam source and said pressure bonding mechanism is formed of a first material which is difficult to be sputtered with the activation beam or which does not obstruct a function of a device obtained by bonding the first substrate and the second substrate even if the first material is in the bonding surfaces, or a surface of said at least one is covered with a covering member of the first material;
holding a first substrate by said first holding mechanism and a second substrate by said second holding mechanism;
irradiating the activation beam from said beam source to bonding surfaces of the first and second substrates; and
bonding the first and second substrates by said pressure bonding mechanism such that the bonding surface of the first and second substrates irradiated with the activation beam are opposed to each other.
10 . The room-temperature bonding method according to claim 9 , wherein the first material comprises an element of a main component of the first substrate as an element of a main component of the first material.
11 . The room-temperature bonding method according to claim 10 , wherein the first substrate is a silicon substrate, and the first material comprises silicon oxide.
12 . The room-temperature bonding method according to claim 9 , wherein the first material comprises an insulator.
13 . The room-temperature bonding method according to claim 9 , wherein said covering member comprises a layer covering an inner surface of said vacuum chamber irradiated with the activation beam.
14 . The room-temperature bonding apparatus according to claim 9 , wherein the room-temperature boding apparatus further comprises a target holding mechanism disposed in said vacuum chamber to hold at least a target,
wherein said target holding mechanism has a plurality of areas in which a plurality of said targets are arranged, and
wherein pseudo targets of the first material are arranged in areas, in which targets are not arranged, of the plurality of areas.
15 . The room-temperature bonding method according to claim 9 , wherein said target holding mechanism is formed of the first material, or a surface of said target holding mechanism irradiated with the activation beam is covered with said covering member of the first material,
wherein said irradiating the activation beam from said beam source comprises:
irradiating the activation beam to said target holding mechanism, and
wherein said bonding the first and second substrates by said pressure bonding mechanism comprises:
bonding the bonding surfaces of the first and second substrates to which a material of said target adheres such that the bonding surface of the first and second substrates irradiated with the activation beam are opposed to each other.
16 . The room-temperature bonding method according to claim 9 , wherein an existence density of impurity which exists in the bonding surfaces of the first and second substrates is less than 1×10 14 atoms/cm 2 .