Cobalt precursors for low temperature ALD or CVD of cobalt-based thin films
View Patent ↗Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.
1. A cobalt precursor selected from the group consisting of:
(a)
cobalt (0) carbonyl complex precursors including at least one ligand selected from the group consisting of allenes and Lewis base ligands; and
(b) cobalt dicarbonyl nitrile precursors of the formula (CO) 2 CoN≡O(C≡NR) wherein R is independently selected from among H, dialkylamide, ethylene, acetylene, alkynes, substituted alkenes, C 1 -C 4 substituted alkynes, silylamide, trimethylsilyl, trialkylsilyl-substituted alkynes, and trialkylsilylamido-substituted alkynes.
2. The cobalt precursor of claim 1 , comprising a cobalt (0) carbonyl complex precursor including a Lewis base ligand.
3. A cobalt precursor comprising dicobalt hexacarbonyl (trimethylsilylacetylene).
4. A cobalt precursor comprising a cobalt hexacarbonyl dinitrile precursor of the formula [RN≡C—Co(CO) 3 ] 2 , wherein R is independently selected from among H, C 1 -C 4 alkyl, silyl-substituted alkyl, dialkylamide, ethylene, acetylene, alkynes, substituted alkenes, C 1 -C 4 substituted alkynes, silylalkyl, silylamide, trimethylsilyl, trialkylsilyl-substituted alkynes, and trialkylsilylamido-substituted alkynes.
5. The cobalt precursor of claim 4 , wherein the cobalt precursor comprises [ t BuNC Co(CO) 3 ] 2 ,
6. The cobalt precursor of claim 1 , comprising a cobalt dicarbonyl nitrile precursor of the formula (CO) 2 CoN≡O(C≡NR) wherein R is independently selected from among H, ethylene, acetylene, alkynes, substituted alkenes, and C 1 -C 4 substituted alkynes.