Fluorine free tungsten ALD/CVD process
A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.
1. A method of forming a tungsten or a tungsten-containing film on a substrate comprising:
providing a tungsten precursor,
volatilizing the tungsten precursor to form a tungsten precursor vapor, and
contacting the tungsten precursor vapor with a substrate under vapor deposition conditions to form the tungsten or tungsten-containing film on the substrate,
wherein the tungsten precursor comprises a tungsten precursor of the formula
2. The method of claim 1 , wherein the tungsten precursor further comprises WCl 6 or WCl 4 .
3. The method of claim 1 , wherein the tungsten precursor is provided in a solid form.
4. The method of claim 3 , wherein the tungsten precursor is in particulate form.
5. The method of claim 3 , wherein the tungsten precursor is coated on an interior surface in the vessel.
6. The method of claim 1 , wherein the tungsten precursor is provided in a solvent medium.
7. The method of claim 6 , wherein the tungsten precursor is provided in a solution.
8. The method of claim 6 , wherein the tungsten precursor is provided in a suspension.
9. The method of claim 1 , wherein the substrate comprises a glue layer of a material compatible with the tungsten or tungsten-containing film.