Copper alloy sputtering target
View Patent ↗A copper alloy sputtering target having a composition comprising 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu and unavoidable impurities, wherein a compositional variation in a plane of the sputtering target is within 20%. The present invention provides a copper alloy sputtering target capable of forming a semiconductor element wiring material, particularly a stable and uniform seed layer which is free of aggregation during copper electroplating, and which has superior sputter deposition properties, and a semiconductor element wiring formed using the copper alloy sputtering target.
1. A copper alloy sputtering target consisting of Cu, Mn and Al at a composition consisting of 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu, wherein a compositional variation of each of Mn and Al in a plane of the copper alloy sputtering target is within 20%.
2. The copper alloy sputtering target according to claim 1 , wherein a variation in a crystal grain size in a plane of the sputtering target is 6.0 μm or less.
3. The copper alloy sputtering target according to claim 2 , wherein a variation in conductivity in a plane of the sputtering target is 0.5% IACS or less.
4. The copper alloy sputtering target according to claim 3 , wherein a variation in Vickers hardness in a plane of the sputtering target is 3 Hv or less.
5. A method of producing a copper alloy sputtering target consisting of Cu, Mn and Al, wherein raw materials of Cu, Mn and Al are respectively prepared, the raw materials are adjusted to attain an intended alloy composition and thereafter melted and alloyed via an induction melting method under a vacuum atmosphere at a temperature of 1100° C. or higher, the alloyed molten metal is subsequently poured in a mold and thereafter cooled to 300° C. at a cooling rate of 30° C./min or more, the ingot is thereafter subject to processes of hot forging, hot rolling, cold rolling, and heat treatment to obtain a sputtering target material of a composition consisting of 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu, and the sputtering target material is additionally machined and processed into a target shape, wherein a compositional variation of each of Mn and Al in a plane of the copper alloy sputtering target is within 20%.
6. The copper alloy sputtering target according to claim 1 , wherein a variation in conductivity in a plane of the sputtering target is 0.5% IACS or less.
7. The copper alloy sputtering target according to claim 1 , wherein a variation in Vickers hardness in a plane of the sputtering target is 3 Hv or less.