Substrate processing apparatus and control device for substrate processing apparatus

1. A substrate processing apparatus comprising:

a substrate processing unit configured to accommodate a substrate in a processing chamber, and process the substrate; and

a controller including a storage unit configured to store a plurality of recipes that represent processing conditions, a main control unit configured to control the substrate processing unit based on a first recipe stored in the storage unit, and cause a predetermined processing to be performed on the substrate, and a user interface unit configured to access the main control unit,

wherein the controller comprises:

a recipe optimization unit configured to calculate a difference between measurement data obtained by measuring a processing result of the substrate and a target value, and modify the first recipe by changing some of processing conditions of the first recipe so that the difference becomes smaller, and

a recipe batch-optimization unit configured to retrieve a first set of recipes among the plurality of recipes from the storage unit based on their processing conditions, the first set of recipes being recipes that can be optimized in connection with the first recipe and change some of the processing conditions of the retrieved first set of recipes in a same manner as for the first recipe for which the optimization is being performed,

wherein a processing condition of the first recipe before the optimization is different from a corresponding processing condition of the first set of recipes before the optimization and the other processing conditions of the first recipe before the optimization are equal to corresponding processing conditions of the first set of recipes before the optimization,

wherein the processing conditions are described in the plurality of recipes capable of forming the target value of measurement data.

2. The substrate processing apparatus of claim 1 , wherein the first recipe comprises at least a type of processing gas, a flow rate of processing gas, a processing temperature, a pressure, and a processing time, as the processing conditions.

3. The substrate processing apparatus of claim 2 , wherein processing conditions of the first recipe are identical to processing conditions of the first set of recipes except the processing temperature, and the recipe batch-optimization unit changes the processing temperature of the retrieved first set of recipes.

4. The substrate processing apparatus of claim 1 , wherein the substrate is any one of a semiconductor wafer, a substrate for an FPD, and a substrate for a solar cell.

5. The substrate processing apparatus of claim 1 , wherein the predetermined processing is a film forming process or an etching process.

6. The substrate processing apparatus of claim 1 , wherein the measurement data include any one of film thickness data in a film forming process, and etching rate data in an etching process.

7. A control device for controlling a substrate processing apparatus including a substrate processing unit that accommodates a substrate within a processing chamber and performs a processing on the substrate, the control device comprising: a storage unit configured to store a plurality of recipes that represent processing conditions;

a main control unit configured to control the substrate processing unit based on a first recipe stored in the storage unit, and cause a predetermined processing to be performed on the substrate; and

a user interface unit configured to access the main control unit,

a recipe optimization unit configured to calculate a difference between measurement data obtained by measuring a processing result of the substrate and a target value, and modify the first recipe by changing some of processing conditions of the first recipe so that the difference becomes smaller; and

a recipe batch-optimization unit configured to retrieve a first set of recipes among the plurality of recipes from the storage unit based on their processing conditions, the first set of recipes being recipes that can be optimized in connection with the first recipe and change some of the processing conditions of the retrieved first set of recipes in a same manner as for the first recipe for which the optimization is being performed,

wherein a processing condition of the first recipe before the optimization is different from a corresponding processing condition of the first set of recipes before the optimization and the other processing conditions of the first recipe before the optimization are equal to corresponding processing conditions of the first set of recipes before the optimization,

wherein the processing conditions are described in the plurality of recipes capable of forming the target value of measurement data.

8. The control device of claim 7 , wherein the first recipe comprises at least a type of processing gas, a flow rate of processing gas, a processing temperature, a pressure, and a processing time, as the processing conditions.

9. The control device of claim 8 , wherein processing conditions of the first recipe are identical to processing conditions of the first set of recipes except the processing temperature, the recipe batch-optimization unit changes the processing temperature of the retrieved first set of recipes.

10. The control device of claim 7 , wherein the substrate is any one of a semiconductor wafer, a substrate for an FPD, and a substrate for a solar cell.

11. The control device of claim 7 , wherein the processing is a film forming process or an etching process.

12. The control device of claim 7 , wherein the measurement data include any one of film thickness data in a film forming process, and etching rate data in an etching process.