Semiconductor component that includes a common mode filter and method of manufacturing the semiconductor component
In accordance with an embodiment, a semiconductor component, includes a common mode filter monolithically integrated with a protection device. The common mode filter includes a plurality of coils and the protection device has a terminal coupled to a first coil and another terminal coupled to a second coil.
1. A semiconductor component, comprising a common mode filter monolithically integrated with a protection device, the common mode filter comprising:
a first coil having first and second terminals;
a second coil having first and second terminals, the first terminal of the second coil coupled to the first terminal of the first coil, the first coil magnetically coupled to the second coil;
the protection device having a first terminal coupled to the first terminal of the first coil and a second terminal coupled to the first terminal of the second coil; and
wherein the protection device further comprises a first capacitor coupled between the first terminal and the second terminal of the first coil and a second capacitor coupled between the first terminal and the second terminal of the second coil.
2. The semiconductor component of claim 1 , wherein the protection device comprises:
a first diode having an anode and a cathode, the cathode coupled to the first terminal of the first coil; and
a second diode having an anode and a cathode, the anodes of the first and second diodes coupled together and the cathode of the second diode coupled to the first terminal of the second coil.
3. The semiconductor component of claim 1 , wherein the protection device comprises:
a first diode having an anode and a cathode; and
a second diode having an anode and a cathode, the cathode of the first diode coupled to the first terminal of the first coil, the cathode of the second diode coupled to the anode of the first diode.
4. The semiconductor component of claim 3 , further including a transistor having a control electrode and first and second current carrying electrodes, the first current carrying electrode coupled to the cathode of the first diode and the second current carrying electrode coupled to the anode of the second diode.
5. The semiconductor component of claim of claim 3 , wherein the protection device further comprises:
a third diode having an anode and a cathode, the anode of the third diode coupled to the anode of the second diode; and
a fourth diode having an anode and a cathode, the anode of the fourth diode coupled to cathode of the third diode and to the first terminal of the second coil.
6. The semiconductor component of claim 1 , wherein the protection device comprises:
a first diode having an anode and a cathode, the cathode of the first diode coupled to the first terminal of the first coil; and
a second diode having an anode and a cathode, the anodes of the first and second diodes coupled together and the cathode of the second diode coupled to the first terminal of the second coil.
7. A semiconductor component, comprising a common mode filter monolithically integrated with a protection device, the common mode filter comprising:
a first coil having first and second terminals;
a second coil having first and second terminals, the first terminal of the second coil coupled to the first terminal of the first coil, the first coil magnetically coupled to the second coil;
the protection device having a first terminal coupled to the first terminal of the first coil and a second terminal coupled to the first terminal of the second coil, wherein the protection device further comprises:
a first diode having an anode and a cathode; and
a second diode having an anode and a cathode, the cathode of the first diode coupled to the first terminal of the first coil, the cathode of the second diode coupled to the anode of the first diode;
a third diode having an anode and a cathode, the anode of the third diode coupled to the anode of the second diode; and
a fourth diode having an anode and a cathode, the anode of the fourth diode coupled to cathode of the third diode and to the first terminal of the second coil;
a first transistor having a control electrode and first and second current carrying electrodes, the first current carrying electrode coupled to the cathode of the first diode and the second current carrying electrode coupled to the anode of the second diode and to the anode of the third diode; and
a second transistor having a control electrode and first and second current carrying electrodes, the first current carrying electrode of the second transistor coupled to the second current carrying electrode of the first transistor, and the second current carrying electrode of the second transistor coupled to the anode of the fourth diode.
8. The semiconductor component of claim 7 , wherein the protection device further comprises a first capacitor coupled between the first terminal and the second terminal of the first coil and a second capacitor coupled between the first terminal and the second terminal of the second coil.
9. A semiconductor component that includes a common mode filter monolithically integrated with a protection device, the semiconductor component comprising:
a semiconductor material having a peripheral region, a central region, and a resistivity of at least 5 ohm-centimeters, wherein the central region comprises a plurality of device regions isolated by isolation trenches;
a first coil over a first portion of the central region, the first coil having a first terminal and a second terminal;
a second coil over a second portion of the central region, the second coil having a first terminal and a second terminal;
a first insulating material over the first and second coils; and
a protection device monolithically integrated with the first and second coils, the protection device having a first terminal coupled to the first coil and a second terminal coupled to the second coil, wherein the protection device further comprises:
a first diode having an anode and a cathode, the cathode of the first diode coupled to the first terminal of the first coil; and
a second diode having an anode and a cathode, the cathode of the second diode coupled to the second terminal of the second coil, the anode of the second diode coupled to the anode of the first diode; and wherein the protection device further comprises a first capacitor coupled between the first terminal and the second terminal of the first coil and a second capacitor coupled between the first terminal and the second terminal of the second coil.
10. The semiconductor component of claim 9 , wherein the semiconductor material comprises an epitaxial layer formed on a semiconductor substrate, and further including:
a first metallization system over portions of the epitaxial layer;
a first layer of dielectric material over the first metallization system;
the first coil over the first layer of dielectric material, the first coil having coil elements;
a second layer of dielectric material over the first coil; and
the second coil over the first layer of dielectric material, the coil elements of the second coil laterally offset from the coil elements of the first coil.
11. The semiconductor component of claim 10 , wherein the first layer of dielectric material and the second layer of dielectric material are photosensitive polyimide.
12. The semiconductor component of claim 10 , further including a first contact structure extending through the first layer of dielectric material, through the second layer of dielectric material and in contact with a portion of the first metallization system.
13. The semiconductor component of claim 9 , wherein the protection device further includes:
a third diode having an anode and a cathode, the anode of the third diode coupled to the cathode of the first diode; and
a fourth diode having an anode and a cathode, the anode of the fourth diode coupled to cathode of the second diode.
14. The semiconductor component of claim 13 , wherein the protection device further comprises:
a first transistor having a control electrode and first and second current carrying electrodes, the first current carrying electrode of the first transistor coupled to the anodes of the first diode and the second diode and the second current carrying electrode of the first transistor coupled to the cathode of the third diode; and
a second transistor having a control electrode and first and second current carrying electrodes, the first current carrying electrode of the second transistor coupled to the first current carrying electrode of the first transistor and to the anodes of the first diode and the second diode, and the second current carrying electrode of the second transistor coupled to the cathode of the fourth diode.