IP Library Granted Patent US 9,437,788
Granted Patent B2
US 9,437,788 · App. 14/453,878 · Granted Sep 6, 2016

Light emitting diode (LED) component comprising a phosphor with improved excitation properties

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Quick Facts
Patent No.
US 9,437,788
App. No.
14/453,878
Granted
Sep 6, 2016
Kind
B2
Abstract

A light emitting diode (LED) component comprises an LED having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the LED. The phosphor includes a host lattice comprising yttrium aluminum garnet (YAG), and may include an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice. An emission spectrum of the phosphor has a maximum intensity in a wavelength range of from about 540 nm to about 570 nm, and an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

Claims (32)

1. A phosphor with improved excitation properties, the phosphor comprising:

a host lattice comprising yttrium aluminum garnet (YAG); and

an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice,

wherein the phosphor comprises a chemical formula Y a Ce b Gd c Al d Ga e O z , where 0<a<3, 0<b≦0.6, 0≦c≦1, 0<d<5, 0<e≦2.5, and z is nominally 12,

wherein R=(a+b+c)/(d+e), and 0.5≦R<0.6, and

wherein an emission spectrum of the phosphor comprises a maximum intensity in a wavelength range of from about 540 nm to about 570 nm.

2. The phosphor of claim 1 , wherein the maximum intensity of the emission spectrum is in the wavelength range of from about 550 nm to about 560 nm.

3. The phosphor of claim 1 , wherein an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

4. The phosphor of claim 1 , wherein c=0 and 0.1≦b≦0.6.

5. The phosphor of claim 1 , wherein 0.3≦e≦2.5.

6. The phosphor of claim 1 , wherein

b/(a+b+c)·100=mol. % Ce, and 3<mol. % Ce<20,

e/(d+e)·100=mol. % Ga, and 5<mol. % Ga<50, and

wherein mol. % Ga mol. % Ce.

7. The phosphor of claim 6 , wherein 3.3≦mol. % Ce<15 and 12≦mol. % Ga<20.

8. The phosphor of claim 1 , wherein d+e>5 and a+b=3.

9. A light emitting diode (LED) component comprising:

an LED comprising a dominant wavelength in a range of from about 425 nm to less than 460 nm;

a phosphor in optical communication with the LED, the phosphor comprising: a host lattice comprising yttrium aluminum garnet (YAG); and an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice,

wherein the phosphor comprises a chemical formula Y a Ce b Gd c Al d Ga e O z , where 0<a<3, 0<b≦0.6, 0≦c≦1, 0<d<5, 0<e≦2.5, and z is nominally 12,

wherein an emission spectrum of the phosphor comprises a maximum intensity in a wavelength range of from about 540 nm to about 570 nm, and

wherein an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

10. The LED component of claim 9 , wherein R=(a+b+c)/(d+e), and 0.5≦R<0.6.

11. The LED component of claim 10 , wherein d+e>5 and a+b=3.

12. The LED component of claim 9 , wherein the maximum intensity of the emission spectrum is in the wavelength range of from about 550 nm to about 560 nm.

13. The LED component of claim 9 , wherein the intensity at 440 nm is equivalent to at least about 90% of the maximum intensity of the excitation spectrum.

14. The LED component of claim 9 , wherein the phosphor comprises a ccx value of from about 0.44 to about 0.45 and a ccy value of from about 0.53 to about 0.54.

15. The LED component of claim 9 , wherein

b/(a+b+c)·100=mol. % Ce, and 3<mol. % Ce<20,

e/(d+e)·100=mol. % Ga, and 5<mol. % Ga<50, and

wherein mol. % Ga mol. % Ce.

16. The LED component of claim 15 , wherein 3.3 mol. % Ce<15 and 12≦mol. % Ga<20.

Assignments (5)
PATENT SECURITY AGREEMENT Recorded Jun 30, 2025
From: CREELED, INC.; PENGUIN SOLUTIONS CORPORATION (DE); SMART EMBEDDED COMPUTING, INC.; SMART HIGH RELIABILITY SOLUTIONS LLC; SMART MODULAR TECHNOLOGIES, INC.; PENGUIN COMPUTING, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 071755/0001 →
RELEASE OF PATENT SECURITY INTEREST RECORDED AT R/F 058983/0001 Recorded Jun 25, 2025
From: CITIZENS BANK, N.A.
To: SMART MODULAR TECHNOLOGIES, INC.; SMART EMBEDDED COMPUTING, INC.; SMART HIGH RELIABILITY SOLUTIONS LLC; CREELED, INC.
Reel/Frame 071725/0207 →
SECURITY INTEREST Recorded Feb 7, 2022
From: SMART MODULAR TECHNOLOGIES, INC.; SMART HIGH RELIABILITY SOLUTIONS, LLC; SMART EMBEDDED COMPUTING, INC.; CREELED, INC.
To: CITIZENS BANK, N.A.
Reel/Frame 058983/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2021
From: CREE, INC.
To: CREELED, INC.
Reel/Frame 056031/0646 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 28, 2016
From: CLATTERBUCK, DAVID M.; SEIBEL, HARRY A.; KINKENON, DOUGLAS E.
To: CREE, INC.
Reel/Frame 038402/0335 →