Semiconductor package with through silicon vias

1. A method of forming a light-emitting diode (LED) device, the method comprising:

providing a first substrate, the substrate having a doped layer;

forming an LED structure on the first substrate;

forming a porous layer on the first substrate after forming the LED structure;

forming a conductive substrate on the LED structure; and

separating the LED structure from the first substrate along the porous layer.

2. The method of claim 1 , wherein the step of separating the LED structure comprises mechanically detaching the first substrate by cleaving the porous layer.

3. The method of claim 1 , wherein the step of separating the LED structure comprises removing the porous layer by a chemical etch process.

4. The method of claim 1 , further comprising forming a plurality of sacrificial plugs over the substrate before the forming of the LED structure, and wherein the step of forming the LED structure comprises forming the LED structure between the sacrificial plugs.

5. The method of claim 4 , further comprising removing the sacrificial plugs to create openings in place of the removed sacrificial plugs.

6. The method of claim 5 , further comprising forming spacers along sidewalls of the LED structure.

7. The method of claim 1 , wherein the forming the conductive substrate is performed at least in part by electroplating.

8. The method of claim 1 , wherein the forming the conductive substrate is performed at least in part by forming a doped silicon layer over the LED structure.

9. The method of claim 1 , wherein the first substrate comprises a textured surface.

10. A method, comprising:

forming a doped layer over a first substrate;

forming a plurality of sacrificial plugs over the first substrate, wherein the sacrificial plugs and the first substrate have substantially different etching rates to a predetermined etchant;

forming a light-emitting diode (LED) structure over the doped layer, wherein the LED structure is formed between the sacrificial plugs;

removing the sacrificial plugs; and

thereafter converting the doped layer into a porous layer.

11. The method of claim 10 , wherein:

the removing of the sacrificial plugs forms openings in place of the removed sacrificial plugs; and

the converting of the doped layer is performed at least through the openings.

12. The method of claim 11 , wherein the step of converting comprises performing a chemical etch process to the doped layer through the openings.

13. The method of claim 11 , further comprising: forming spacers on sidewalls of the LED structure in the openings.

14. The method of claim 10 , further comprising:

forming a second substrate over the LED structure; and

thereafter removing the porous layer and the first substrate.

15. The method of claim 14 , wherein the removing of the porous layer comprises cleaving the porous layer or chemically etching the porous layer.

16. The method of claim 14 , wherein:

the first substrate includes a silicon substrate; and

the second substrate includes a doped silicon substrate, a metal substrate, or a metal alloy substrate.

17. A method, comprising:

forming a doped layer over a silicon substrate;

forming a plurality of dielectric plugs over the silicon substrate;

forming a light-emitting diode (LED) structure over the doped layer, wherein the LED structure is formed between the dielectric plugs;

removing the dielectric plugs, thereby forming a plurality of openings that partially expose the doped layer;

converting the doped layer into a porous layer at least in part by performing an electro-chemical anodization process through the openings;

forming a conductive substrate over the LED structure; and

thereafter removing the silicon substrate, wherein the removing of the silicon substrate comprises cleaving the porous layer or chemically etching the porous layer.

18. The method of claim 17 , further comprising: forming spacers in the openings.

19. The method of claim 17 , wherein the forming of the conductive substrate comprises forming the conductive substrate by electroplating.

20. The method of claim 1 , wherein the step of converting the doped layer to the porous layer is performed via an electro-chemical anodization process.