Stack chip package image sensor
An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.
1. A stack chip package image sensor comprising:
a first semiconductor chip that includes a photodiode, a transmission transistor, a first floating diffusion region and a first conductive pad,
wherein the photodiode outputs an image charge through the first conductive pad, and
wherein the first floating diffusion region is connected between the first conductive pad and a ground terminal; and
a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, a capacitor for noise reduction, a second floating diffusion region and a second conductive pad, and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad,
wherein the
capacitor for noise reduction reduces a noise component added to the output voltage supplied to the pixel, and
wherein the reset transistor is connected to one terminal of the capacitor, and the second floating diffusion region is connected to the other terminal of the reset transistor and the second conductive pad, such that the capacitor is not directly connected to the second floating diffusion region and the second conductive pad.
2. The stack chip package image sensor according to claim 1 , wherein the first semiconductor chip and the second semiconductor chip are formed in a stack structure.
3. The stack chip package image sensor according to claim 1 , wherein the photodiode and the transmission transistor of the first semiconductor chip are serially connected to each other and are connected to the first conductive pad.
4. The stack chip package image sensor according to claim 1 , wherein the first semiconductor chip includes a plurality of photodiodes and a plurality of transmission transistors, which are serially connected to each other, and the plurality of photodiodes and the plurality of transmission transistors serially connected to each other are commonly connected to the first conductive pad.
5. The stack chip package image sensor according to claim 1 , wherein the first semiconductor chip comprises:
a first wafer including the photodiode; and
a first inter-metal dielectric that includes a metal line, the transmission transistor, and the first conductive pad for outputting the image charge output from the photodiode to the second semiconductor chip, and is coupled with the first wafer.
6. The stack chip package image sensor according to claim 1 , wherein the second semiconductor chip comprises:
a second wafer including the capacitor for noise reduction; and
a second inter-metal dielectric including the drive transistor, the selection transistor, and the reset transistor for supplying the corresponding pixel with the output voltage corresponding to the image charge received from the first semiconductor chip.
7. The stack chip package image sensor according to claim 1 , wherein the capacitor for noise reduction is connected between a power supply and a ground terminal.
8. The stack chip package image sensor according to claim 1 , wherein the drive transistor and the selection transistor are serially connected to each other between one terminal of the capacitor for noise reduction and a terminal of the output voltage.
9. The stack chip package image sensor according to claim 1 , wherein the capacitor for noise reduction is formed in a projection region of the photodiode and is connected to a power supply through a metal line.
10. The stack chip package image sensor according to claim 1 , wherein the capacitor for noise reduction includes at least one of a trench capacitor, a stack capacitor, and a MOS capacitor.
11. The stack chip package image sensor according to claim 1 , wherein the capacitor for noise reduction is formed in a unit pixel of the first semiconductor chip in a one-to-one manner or in a one-to-N manner.