IP Library Granted Patent US 9,305,952
Granted Patent B2
US 9,305,952 · App. 14/469,498 · Granted Apr 5, 2016

Image sensors with inter-pixel light blocking structures

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Quick Facts
Patent No.
US 9,305,952
App. No.
14/469,498
Granted
Apr 5, 2016
Kind
B2
Abstract

An image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shields may be formed on the substrate to present pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. Metal interconnect muting structures may be formed over the buried light shields. In one embodiment, light blocking structures may be formed to completely seal the interconnect routing structures. The light blocking structures may be formed on top of the buried light shields or on the surface of the substrate. In another embodiment, planar light blocking structures that are parallel to the surface of the substrate may be formed between metal routing layers to help absorb stray light. Light blocking structures formed in these ways can help reduce optical crosstalk and enhance global shutter efficiency.

Claims (39)

1. An image sensor, comprising:

a substrate;

a photosensitive element formed in the substrate;

a dielectric stack formed over the substrate;

interconnect routing structures formed in the dielectric stack;

light blocking structures that are formed in the dielectric stack and that completely seal the interconnect routing structures;

a gate conductor formed on the substrate; and

a buried light shield formed on the substrate, wherein the buried light shield has a window through which a via is formed to connect the gate conductor to the interconnect routing structures, and wherein the light blocking structures are formed on the buried light shield.

2. The image sensor defined in claim 1 , wherein the light blocking structures have a conical shape.

3. The image sensor defined in claim 1 , further comprising:

antireflective material formed on the light blocking structures.

4. The image sensor defined in claim 1 , further comprising:

a conductive ring interposed between the buried light shield and the light blocking structure.

5. A system, comprising:

a central processing unit;

memory;

a lens;

input-output circuitry; and

an imaging device, wherein the imaging device comprises:

a substrate;

first and second neighboring photodiodes formed in the substrate;

a dielectric stack formed over the substrate;

metal interconnect routing structures formed in the dielectric stack over a region in the substrate that separates the first and second neighboring photodiodes;

light blocking structures that prevent light from reaching the metal interconnect routing structures; and

buried light shielding structures, wherein the light blocking structures are formed on the buried light shielding structures.

6. The system defined in claim 5 , wherein the light blocking structures completely surround and seal the metal interconnect routing structures.

7. The system defined in claim 5 , wherein the buried light shielding structures comprise tungsten buried light shielding structures.

8. The system defined in claim 7 , wherein the light blocking structures are connected to the tungsten buried light shielding structures with a conductive ring.

9. An image sensor, comprising:

a substrate;

a photosensitive element formed in the substrate;

a dielectric stack formed over the substrate;

interconnect routing structures formed in the dielectric stack;

light blocking structures that are formed in the dielectric stack and that surround the interconnect routing structures, wherein the light blocking structures prevent light from reaching the interconnect routing structures; and

a buried light shield formed on the substrate, wherein the light blocking structures are formed on the buried light shield.

10. The image sensor defined in claim 9 , wherein the buried light shield comprises tungsten.

11. The image sensor defined in claim 9 , further comprising:

a conductive ring interposed between the buried light shield and the light blocking structures.

12. The image sensor defined in claim 11 , wherein the conductive ring is in direct contact with the buried light shield and the light blocking structures.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2014
From: LENCHENKOV, VICTOR; YI, XIANMIN
To: APTINA IMAGING CORPORATION
Reel/Frame 033719/0314 →