Wafer dicing using femtosecond-based laser and plasma etch
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.
1. A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
a factory interface;
a laser scribe apparatus coupled with the factory interface; and
a cluster tool coupled with the factory interface, the cluster tool comprising a plasma etch chamber, wherein the laser scribe apparatus is not included in the cluster tool.
2. The system of claim 1 , wherein the laser scribe apparatus is configured to perform laser ablation of streets between integrated circuits of a semiconductor wafer, and wherein the plasma etch chamber is configured to etch the semiconductor wafer to singulate the integrated circuits subsequent to the laser ablation.
3. The system of claim 1 , the cluster tool further comprising:
a deposition chamber configured to form a mask layer above the integrated circuits of the semiconductor wafer.
4. The system of claim 2 , the cluster tool further comprising:
a wet/dry station configured to clean the semiconductor wafer subsequent to the laser ablation or the etching.
5. The system of claim 1 , wherein the femtosecond-based laser has a wavelength of approximately less than or equal to 530 nanometers with a laser pulse width of approximately less than or equal to 400 femtoseconds.
6. The system of claim 1 , wherein plasma etch chamber is configured to generate a high density plasma.
7. The system of claim 3 , wherein the deposition chamber is configured to deposit a polymer layer.
8. The system of claim 1 , further comprising a metrology station.
9. The system of claim 1 , wherein the overall footprint of the system is approximately 3500 mm by 3800 mm.
10. The system of claim 1 , wherein the laser scribe apparatus comprises a femtosecond-based laser.
11. A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
a factory interface;
a laser scribe apparatus coupled with the factory interface and comprising a femtosecond-based laser, wherein the laser scribe apparatus is configured to perform laser ablation of streets between integrated circuits of a semiconductor wafer; and
a cluster tool coupled with the factory interface, the cluster tool comprising:
a plasma etch chamber configured to etch the semiconductor wafer to singulate the integrated circuits subsequent to the laser ablation;
a deposition chamber configured to form a mask layer above the integrated circuits of the semiconductor wafer; and
a wet/dry station configured to clean the semiconductor wafer subsequent to laser ablation or etching, wherein the laser scribe apparatus is not included in the cluster tool;
wherein the overall footprint of the system is approximately 3500 mm by 3800 mm.
12. The system of claim 11 , wherein the femtosecond-based laser has a wavelength of approximately less than or equal to 530 nanometers with a laser pulse width of approximately less than or equal to 400 femtoseconds.
13. The system of claim 11 , wherein plasma etch chamber is configured to generate a high density plasma.
14. The system of claim 11 , wherein the deposition chamber is configured to deposit a polymer layer.
15. The system of claim 11 , further comprising a metrology station.