Light emitting devices, systems, and methods of manufacturing

1. A light emitting device comprising:

a substrate;

an n layer;

an active light emitting region having a light emitting side;

a p layer;

a reflector opposite the light emitting side; and

a plurality of microchannels configured to optically couple the active light emitting region with the reflector;

the light emitting device further comprising:

a p-type semiconductor overlying layer between the p layer and the reflector,

wherein the plurality of microchannels are disposed in the p-type semiconductor overlying layer and are configured to reduce self-absorption to thereby increase light emission efficiency of the light emitting device;

the light emitting device further comprising:

a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;

a contact layer; and

a conductive layer.

2. The light emitting device of claim 1 , wherein an area of the plurality of microchannels has a fraction of about 40-80% of a total surface area of the p-type semiconductor overlying layer.

3. The light emitting device of claim 2 , further comprising a bonding layer over a surface of the submount, wherein an area of the plurality of conductive channels has a fraction of about 40-60% of a total surface area of the submount.

4. The light emitting device of claim 3 , wherein the bonding layer includes a portion having an electrical resistivity in a range of 1.0×10 −8 to 1.0×10 −4 Ω·m.

5. The light emitting device of claim 4 , wherein the bonding layer comprises at least one of AuSn or AgSn.

6. The light emitting device of claim 1 , wherein the conductive layer includes a portion having an electrical resistivity in a range of 1.0×10 −8 to 1.0×10 −4 Ω·m.

7. The light emitting device of claim 1 , wherein the plurality of microchanels have a depth of about 10-500 nm.

8. The light emitting device of claim 1 , wherein an area of the plurality of conductive channels is configured for allowing a substantial mechanical strength of the light emitting device.

9. The light emitting device of claim 1 , further comprising a support portion disposed over the light emitting side and configured to provide both mechanical support and improve light transmission.

10. The light emitting device of claim 9 , wherein the support portion has a thickness of about 5-100 microns.

11. The light emitting device of claim 9 , wherein the support portion has an array of blind vias forming an optical functional surface to improve light output.

12. The light emitting device of claim 11 , wherein the blind vias have a depth configured to allow a substantial mechanical strength of the support portion.

13. The light emitting device of claim 12 , wherein the blind vias have a surface area about 40-80% of a total surface area of the support portion.

14. A system comprising one or more light emitting devices, wherein each of the light emitting devices comprises:

a substrate;

an n layer;

an active light emitting region having a light emitting side;

a p layer;

a reflector opposite the light emitting side; and

a p-type semiconductor overlying layer between the p layer and the reflector, having a plurality of microchannels disposed therein configured to optically couple the active light emitting region with the reflector and reduce self-absorption to thereby increase light emission efficiency of the light emitting device;

wherein the plurality of microchanels have a depth of about 10-500 nm, and wherein each of the light emitting devices further comprises:

a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;

a contact layer; and

a conductive layer.

15. The system of claim 14 , wherein an area of the plurality of microchannels has a fraction of about 40-80% of a total surface area of the p-type semiconductor overlying layer.

16. A method of manufacturing a light emitting device,

wherein the device comprises:

a substrate;

an n layer;

an active light emitting region having a light emitting side;

a p layer;

a reflector opposite the light emitting side; and

a p-type semiconductor overlying layer between the p layer and the reflector, having a plurality of microchannels disposed therein configured to optically couple the active light emitting region with the reflector and reduce self-absorption to thereby increase light emission efficiency of the light emitting device;

the light emitting device further comprising:

a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;

a contact layer; and

a conductive layer;

wherein the method comprises:

epitaxially growing the p-type semiconductor overlying layer; and

forming, using dry etching, the plurality of microchannels with a depth of about 10-500 nm.

17. The method of claim 16 , further comprising:

enhancing adhesion of the reflector to the p-type seminconductor overlying layer through annealing in a high-temperature environment under a N 2 atmosphere.