Substrate processing apparatus, method for manufacturing semiconductor device and computer-readable recording medium

1. A substrate processing apparatus, comprising:

a processing space configured to process a substrate:

a substrate mounting table configured to mount the substrate thereon;

an elevation mechanism configured to elevate the substrate mounting table between a transport position in a transport space and a substrate processing position in the processing space;

a partition board configured to partition off the transport space and the processing space;

a gas supply system configured to supply a gas into the processing space;

an exhaust buffer chamber having a space provided so as to surround a lateral circumference of the processing space, and configured to allow a gas to flow therein, the gas being supplied into the processing space;

a gas exhaust system configured to exhaust the gas flowed into the exhaust buffer chamber; and

a conductance adjustment plate disposed on an outer peripheral side of the substrate so as to form a gas flow path on the outer peripheral side of the substrate and between the exhaust buffer chamber and the processing space,

wherein

the substrate mounting table has a projecting part at an outer peripheral end, the projecting part projecting to a lower surface side of the partition board,

the conductance adjustment plate is formed so that an inner peripheral side is supported by the substrate mounting table when the substrate is positioned at the substrate processing position, and an outer peripheral side is supported by the partition board when the substrate is positioned at the transport position, and formed so that an outer peripheral side edge is extended to an inside of the exhaust buffer chamber, and

the partition board is configured so that an inner peripheral end is extended to a position which opposites to the gas flow path.

2. The substrate processing apparatus according to claim 1 , comprising:

a controller configured to control the elevation mechanism,

a processing gas supply system configured to supply a processing gas to an inside of the processing space, and

a purge gas supply system configured to supply a purge gas to the inside of the processing space,

wherein the controller is configured to control the elevation mechanism so that the position of upper surface of the conductance adjustment plate in a case of supplying the purge gas to the inside of the processing space and in a case of exhausting the inside of the processing space is lowered than the position of the upper surface of the conductance adjustment plate in a case of supplying the processing gas to the inside of the processing space.

3. The substrate processing apparatus according to claim 2 ,

wherein the controller is configured to control the processing gas supply system, the purge gas supply system and the elevation mechanism so that the processing gas and the purge gas are supplied alternately, and the position of the upper surface of the conductance adjustment plate is different between at the supply time of the processing gas and at the supply time of the purge gas.

4. The substrate processing apparatus according to claim 1 , wherein distance between the outer peripheral side end of the conductance adjustment plate and the inner peripheral end of the partition board is longer than distance between a lower surface of the conductance adjustment plate and a upper surface of the partition board.

5. The substrate processing apparatus according to claim 1 , comprising:

a showerhead provided in the gas supply system; and

a showerhead exhaust system configured to exhaust an inside of the showerhead.

6. A method for manufacturing a semiconductor device, comprising:

elevating a substrate mounting table on which a substrate is mounted at a transport position in a transport space, and elevating the substrate up to a substrate processing position in a processing space, and supporting an inner peripheral side of a conductance adjustment plate, an outer peripheral side of which is supported by a partition board which partitions off the transport space and the processing space, by the substrate mounting table in this elevating process;

supplying a gas into the processing space of the substrate; and

flowing a gas supplied into the processing space, into an exhaust buffer chamber having a space provided so as to surround a lateral circumference of the processing space, through a gas flow path formed on the conductance adjustment plate, and thereafter exhausting the gas from the exhaust buffer chamber, the conductance adjustment plate being formed so that an outer peripheral side edge is extended to an inside of the exhaust buffer chamber, the partition board being formed so that an inner peripheral end is extended to a position which opposites to the gas flow path, and the substrate mounting table being formed to have a projecting part projecting to a lower surface side of the partition board at an outer peripheral end.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein an elevating position of the substrate mounting table is differentiated between the gas supplying step and the gas exhausting step.

8. A non-transitory computer readable recording medium storing a program configured to cause a computer to execute:

a substrate mounting table elevation procedure of elevating a substrate mounting table on which a substrate is mounted at a transport position in a transport space, and elevating the substrate up to a substrate processing position in a processing space, and supporting an inner peripheral side of a conductance adjustment plate, an outer peripheral side of which is supported by a partition board which partitions off the transport space and the processing space, by the substrate mounting table in this elevating process;

a gas supplying procedure of supplying a gas into the processing space of the substrate; and

a gas exhausting procedure of flowing a gas supplied into the processing space, into an exhaust buffer chamber having a space provided so as to surround a lateral circumference of the processing space, through a gas flow path formed on the conductance adjustment plate, and thereafter exhausting the gas from the exhaust buffer chamber, the conductance adjustment plate being formed so that an outer peripheral side edge is extended to an inside of the exhaust buffer chamber, the partition board being formed so that an inner peripheral end is extended to a position which opposites to the as flow path, and the substrate mounting table being formed to have a projecting part projecting to a lower surface side of the partition board at an outer peripheral end.