Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same
Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
1. An abrasive particle comprising:
a mother particle having a polyhedral crystal face; and
a plurality of auxiliary particles which are formed on a surface of the mother particle and grown and protruded outward,
wherein the mother particle and the auxiliary particles are formed from the same material, and the plurality of auxiliary particles are respectively grown and formed from an edge portion of the mother particle,
wherein each of the mother particle and the auxiliary particles comprises a ceria particle.
2. The abrasive particle of claim 1 , wherein the plurality of auxiliary particles are formed so as to cover a portion of each of crystal faces centered on an edge portion where at least three crystal faces among the polyhedral crystal faces meet.
3. The abrasive particle of claim 2 , wherein the plurality of auxiliary particles adjacent to each other are spaced apart from each other or contact each other.
4. The abrasive particle of claim 3 , wherein the plurality of auxiliary particles contacting each other have an overlapping height ranging from 0% to 70% to a maximum height thereof.
5. The abrasive particle of claim 1 , wherein the auxiliary particle to the mother particle is formed at a size ratio of 100:1 to 5:1.
6. The abrasive particle of claim 5 , having an average particle diameter ranging from 6 nm to 350 nm.
7. The abrasive particle of claim 6 , wherein the mother particle has an average particle diameter ranging from 5 nm to 300 nm.
8. The abrasive particle of claim 7 , wherein the auxiliary particle has an average particle diameter ranging from 1 nm to 50 nm.
9. A slurry for polishing a target workpiece, comprising:
an abrasive particle performing polishing and comprising a mother particle having a polyhedral crystal face and a plurality of auxiliary particles protruded outward from a surface of the mother particle; and
a dispersing agent containing deionized water, in which the abrasive particle is dispersed,
wherein the mother particle and the auxiliary particles are formed from the same material, and the plurality of auxiliary particles are respectively grown and formed from an edge portion of the mother particle,
wherein each of the mother particle and the auxiliary particles comprises a ceria particle.
10. The slurry of claim 9 , wherein in the abrasive particle the plurality of auxiliary particles are formed and grown from an edge where at least two of the polyhedral crystal faces meet.
11. The slurry of claim 10 , wherein the protrusions to the polyhedral crystal faces are formed at a size ratio of 100:1 to 5:1.
12. The slurry of claim 11 , wherein the abrasive particle is contained in an amount ranging from 0.1 wt % to 5 wt % based on a solid content.
13. The slurry of claim 9 , further comprising a polishing accelerating agent accelerating polishing,
wherein the polishing accelerating agent comprises a cationic low molecular weight polymer, a cationic high molecular weight polymer, a hydroxylic acid, and an amino acid, which convert a surface potential of the abrasive particle to a minus potential.
14. The slurry of claim 13 , wherein the polishing accelerating agent is contained in an amount of 0.01 wt % to 0.1 wt % based on 1 wt % of the abrasive particle.
15. The slurry of claim 14 , wherein the cationic low molecular and high molecular polymers comprise at least one of an oxalic acid, a citric acid, a polysulfonic acid, a polyacrylic acid, a polymethacrylic acid (Darvan C-N), copolymeric acids thereof, or salts thereof, the hydroxylic acid comprises at least one of a hydroxylbenzoic acid, an ascorbic acid, or salts thereof, and the amino acid comprises at least one of a picolinic acid, a glutaminic acid, a tryptophan acid, an aminobutylic acid, or salts thereof.
16. The slurry of claim 9 , further comprising a pH adjusting agent adjusting pH of the slurry,
wherein the slurry has a pH which is maintained in a range of 4 to 9 by the pH adjusting agent.
17. The slurry of claim 13 , further comprising a pH adjusting agent adjusting pH of the slurry,
wherein the slurry has a pH which is maintained in a range of 4 to 9 by the pH adjusting agent.