Chip electronic component and manufacturing method thereof
There are provided a chip electronic component and a manufacturing method thereof, and more particularly, a chip electronic component having an internal coil structure capable of preventing the occurrence of short-circuits between coil portions and having a high aspect ratio (AR) by increasing a thickness of a coil as compared to a width of the coil, and a manufacturing method thereof.
1. A chip electronic component comprising:
a magnetic body including an insulating substrate;
an internal coil part formed on at least one surface of the insulating substrate; and an external electrode formed on one end surface of the magnetic body and connected to the internal coil part,
wherein the internal coil part includes a first coil pattern formed on the insulating substrate, a second coil pattern formed to cover the first coil pattern, and a third coil pattern formed on the second coil pattern,
wherein the second coil pattern covers upper and side surfaces of the first coil pattern, and
the third coil pattern is disposed on an upper surface of the second coil pattern, such that at least a portion of a side surface of the second coil pattern is not covered by the third coil pattern,
wherein the magnetic body includes Fe-Si-B-Cr-based amorphous metal particles dispersed in an epoxy resin or polyimide,
wherein the Fe-Si-B-Cr-based amorphous metal particles have a particle diameter of 0.1 to 20 μm.
2. The chip electronic component of claim 1 , wherein the second coil pattern is formed such that the second coil pattern is grown in a width direction and a thickness direction.
3. The chip electronic component of claim 1 , wherein the third coil pattern is formed such that the third coil pattern is grown only in a thickness direction.
4. The chip electronic component of claim 1 , wherein the third coil pattern is formed to extend the internal coil part only in the thickness direction.
5. The chip electronic component of claim 1 , wherein when a thickness of the second coil pattern from the one surface of the insulating substrate to a plating line of the second coil pattern is defined as A and a thickness of the third coil pattern from the plating line of the second coil pattern to a plating line of the third coil pattern is defined as B, B/A is 0.1 to 20.0.
6. The chip electronic component of claim 1 , wherein the internal coil part contains one or more selected from a group consisting of silver (Ag), palladium (Pd), aluminum (Al), nickel (Ni), titanium (Ti), gold (Au), copper (Cu), and platinum (Pt).
7. The chip electronic component of claim 1 , wherein the first coil pattern, the second coil pattern, and the third coil pattern are formed of the same metal.
8. The chip electronic component of claim 1 , wherein an aspect ratio of the internal coil part is 1.2 or more.
9. The chip electronic component of claim 1 , wherein the side surface of the second coil pattern is perpendicular to the surface of the insulating substrate on which the internal coil part is formed.
10. A chip electronic component comprising:
a magnetic body including an insulating substrate;
an internal coil part formed on at least one surface of the insulating substrate; and
an external electrode formed on one end surface of the magnetic body and connected to the internal coil part,
wherein the internal coil part includes a pattern layer formed on the insulating substrate, a first plate layer covering the pattern layer, and a second plate layer formed on the first plate layer, and
wherein the first plate layer covers upper and side surfaces of the pattern layer, and
the second plate layer is disposed on an upper surface of the first plate layer such that at least a portion of a side surface of the first plate layer is not covered by the second plate layer,
wherein the magnetic body includes Fe-Si-B-Cr-based amorphous metal particles dispersed in an epoxy resin or polyimide, and
wherein the Fe-Si-B-Cr-based amorphous metal particles have a particle diameter of 0.1 to 20 μm.
11. The chip electronic component of claim 10 , wherein when a thickness of the first plate layer from the one surface of the insulating substrate to a plating line of the first plate layer is defined as A and a thickness of the second plate layer from the plating line of the first plate layer to a plating line of the second plate layer is defined as B, B/A is 0.1 to 20.0.
12. The chip electronic component of claim 10 , wherein the side surface of the first plate layer is perpendicular to the surface of the insulating substrate on which the internal coil part is formed.