Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
View Patent ↗A method for chemical vapor deposition using a showerhead through which at least one reactive gas and a purge gas are injected over a substrate, wherein the method includes: disposing the showerhead such that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance; supplying a reactive gas and an injection support gas into the showerhead, wherein reactive gases of different kinds are respectively delivered into compartments formed at inside of the showerhead; mixing each reactive gas with its corresponding injection support gas in each mixing zone at inside of the showerhead; supplying a purge gas into a separated compartment at inside of the showerhead; and injecting the reactive gas mixed with the injection support gas and the purge gas through a plurality of reactive gas exits and a plurality of purge gas exits formed at the bottom surface of the showerhead, respectively.
1. A method of chemical vapor deposition (CVD) with a showerhead through which a reactive gas of at least one kind and a purge gas are injected over a substrate located in a reaction chamber to deposit a film on the substrate, comprising the steps of:
disposing the showerhead in such a way that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance;
supplying a reactive gas and an injection support gas into the showerhead, wherein reactive gases of different kinds are respectively delivered into compartments formed at inside of the showerhead in such a way that each reactive gas is mixed with each injection support gas in each mixing zone at inside of the showerhead, mixing each reactive gas with its corresponding injection support gas in each mixing zone at inside of the showerhead;
supplying a purge gas into a separated compartment formed at inside of the showerhead; and
injecting the reactive gas mixed with the injection support gas and the purge gas through a plurality of reactive gas exits and a plurality of purge gas exits formed at the bottom surface of the showerhead, respectively.
2. A method of chemical vapor deposition (CVD) with a showerhead according to claim 1 , wherein the amount of each injection support gas mixed to each reactive gas is independently regulated.
3. A method of chemical vapor deposition (CVD) with a showerhead according to claim 1 , wherein the purge gas and the injection support gas each includes at least one selected from a group consisting of Ar, N, He, H and O.
4. A method of chemical vapor deposition (CVD) with a showerhead according to claim 1 , wherein the reactive gas is a metal-organic compound at gaseous phase.
5. A method of chemical vapor deposition (CVD) with a showerhead according to claim 1 , further comprising the step of cooling the showerhead using a coolant delivered into a cooling jacket which is mounted so as to constitute the lowest part of the showerhead.