Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate
A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.
1. A substrate processing apparatus comprising:
a reaction container where a substrate retainer having a substrate placed thereon is loaded;
an insulating wall including therein a reaction container accommodation chamber wherein the insulating wall is made of an insulating material and configured to accommodate the reaction container;
a heater installed in the reaction container accommodation chamber;
a gas distribution channel installed in a sidewall of the insulating wall;
a gas distribution mechanism configured to distribute air or an inert gas to gas distribution channel;
an intake valve installed at an inlet of the gas distribution channel;
an exhaust valve installed at an outlet of the gas distribution channel; and
a control unit configured to: control the heater to heat the substrate to a target temperature; control the gas distribution mechanism to circulate the air or the inert gas in the gas distribution channel while controlling the intake valve and the exhaust valve to be in closed state when a temperature of the substrate exceeds the target temperature in a temperature elevating process or control the gas distribution mechanism to distribute the air or the inert gas in the gas distribution channel while controlling the intake valve and the exhaust valve to be in open state when the temperature of the substrate exceeds the target temperature in the temperature elevating process; and control the gas distribution mechanism to stop an operation thereof while controlling the intake valve and the exhaust valve to be in closed state when the temperature of the substrate is lowered to the target temperature,
wherein the control unit is further configured to control the gas distribution mechanism to distribute the air or the inert gas in the gas distribution channel while controlling the intake valve and the exhaust valve to be in open state in a temperature lowering process of lowering the temperature of the substrate to be less than the target temperature.
2. The substrate processing apparatus of claim 1 , wherein the gas distribution channel is installed in the sidewall in a cylindrical shape vertically and concentrically with the reaction container.
3. The substrate processing apparatus of claim 1 , wherein the gas distribution channel is radially installed in the sidewall along a circumferential direction of the reaction container.
4. The substrate processing apparatus of claim 1 , further comprising:
chambers communicating with the gas distribution channel and the inlet and the outlet thereof; and
a gas circulation channel configured to circulate the air or the inert gas in the gas distribution channel.
5. The substrate processing apparatus of claim 1 , further comprising a gas cooling unit configured to cool the air or the inert gas circulating through the gas distribution channel,
wherein the control unit is configured to control the gas distribution mechanism to distribute the air or the inert gas via the gas cooling unit in the temperature lowering process.
6. The substrate processing apparatus of claim 1 , further comprising:
a liner tube installed between the insulating wall and the reaction container;
a rapid cooling channel installed in a space between the insulating wall and the liner tube; and
a rapid cooling exhaust channel comprising an opening disposed at a portion of the reaction container accommodation chamber and communicating with the rapid cooling channel.