Method for manufacturing semiconductor device
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a first electrode over a substrate;
forming an insulating film over the first electrode;
forming an oxide semiconductor layer over the insulating film;
performing a heat treatment on the oxide semiconductor layer in a chamber, whereby a hydrogen concentration of the oxide semiconductor layer is reduced;
introducing oxygen into the chamber after the heat treatment;
forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
forming an oxide insulating film over and in contact with the oxide semiconductor layer; and
forming a second electrode over the oxide insulating film,
wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween, and
wherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a material selected from the group consisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; an Al—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-based oxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the hydrogen concentration in the oxide semiconductor layer is lower than 3×10 20 cm −3 after the heat treatment.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the inert atmosphere contains nitrogen or a rare gas.
5. The method for manufacturing a semiconductor device according to claim 1 ,
wherein carrier concentration in the oxide semiconductor layer become higher than or equal to 1×10 10 cm −3 by the heat treatment, and
wherein the oxide insulating film is formed so as to be in contact with part of the oxide semiconductor layer, whereby carrier concentration of the part of the oxide semiconductor layer is lower than 1×10 18 cm −3 .
6. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-deficiency state after the heat treatment, and
wherein the oxide insulating film is formed so as to be in contact with part of the oxide semiconductor layer, whereby the part of the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-excess state.
7. The method for manufacturing a semiconductor device according to claim 1 , further comprising the steps of:
forming a pixel electrode over the oxide insulating film,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode, and
wherein the pixel electrode and the second electrode are formed from the same conductive layer.
8. A method for manufacturing a semiconductor device comprising the steps of:
forming a first electrode over a substrate;
forming an insulating film over the first electrode;
forming an oxide semiconductor layer over the insulating film;
performing a heat treatment on the oxide semiconductor layer in a chamber;
introducing oxygen into the chamber after the heat treatment;
forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
forming an oxide insulating film over and in contact with the oxide semiconductor layer; and
forming a second electrode over the oxide insulating film,
wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween,
wherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere, and
wherein the heat treatment is performed at a temperature higher or equal to 400° C.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein the oxide semiconductor layer comprises a material selected from the group consisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; an Al—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-based oxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein the inert atmosphere contains nitrogen or a rare gas.
11. The method for manufacturing a semiconductor device according to claim 8 , wherein the heat treatment is performed by using a gas rapid thermal annealing method or a lamp rapid thermal annealing method.
12. The method for manufacturing a semiconductor device according to claim 8 ,
wherein carrier concentration in the oxide semiconductor layer become higher than or equal to 1×10 18 cm −3 by the heat treatment, and
wherein the oxide insulating film is formed so as to be in contact with part of the oxide semiconductor layer, whereby carrier concentration of the part of the oxide semiconductor layer is lower than 1×10 18 cm −3 .
13. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-deficiency state after the heat treatment, and
wherein the oxide insulating film is formed so as to be in contact with part of the oxide semiconductor layer, whereby the part of the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-excess state.
14. The method for manufacturing a semiconductor device according to claim 8 , further comprising the steps of:
forming a pixel electrode over the oxide insulating film,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode, and
wherein the pixel electrode and the second electrode are formed from the same conductive layer.
15. A method for manufacturing a semiconductor device comprising the steps of:
forming a first electrode over a substrate;
forming an insulating film over the first electrode;
forming an oxide semiconductor layer over the insulating film;
performing a heat treatment on the oxide semiconductor layer in a chamber;
introducing oxygen into the chamber after the heat treatment;
forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
forming an oxide insulating film over and in contact with the oxide semiconductor layer; and
forming a second electrode over the oxide insulating film,
wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween,
wherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere, and
wherein after the heat treatment, the oxide semiconductor layer includes crystals.
16. The method for manufacturing a semiconductor device according to claim 15 , wherein the oxide semiconductor layer comprises a material selected from the group consisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; an Al—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-based oxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor.
17. The method for manufacturing a semiconductor device according to claim 15 , wherein the inert atmosphere contains nitrogen or a rare gas.
18. The method for manufacturing a semiconductor device according to claim 15 , wherein the heat treatment is performed by using a gas rapid thermal annealing method or a lamp rapid thermal annealing method.
19. The method for manufacturing a semiconductor device according to claim 15 ,
wherein carrier concentration in the oxide semiconductor layer become higher than or equal to 1×10 18 cm −3 by the heat treatment, and
wherein the oxide insulating film is formed so as to be in contact with part of the oxide semiconductor layer, whereby carrier concentration of the part of the oxide semiconductor layer is lower than 1×10 18 cm −3 .
20. The method for manufacturing a semiconductor device according to claim 15 ,
wherein the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-deficiency state after the heat treatment, and
wherein the oxide insulating film is formed so as to be in contact with part of the oxide semiconductor layer, whereby the part of the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-excess state.
21. The method for manufacturing a semiconductor device according to claim 15 , further comprising the steps of:
forming a pixel electrode over the oxide insulating film,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode, and
wherein the pixel electrode and the second electrode are formed from the same conductive layer.