Fin cut on SIT level
View Patent ↗A method of forming semiconductor fins with variable pitches of arbitrary values in a sidewall image transfer (SIT) process is provided. After forming an array of first mandrel structures with a constant pitch and removing at least one first mandrel structure form the array, a set of second mandrel structures are formed overlapping the first mandrel structures. The combination of the first mandrel structures and the second mandrel structures defines pitches of sidewall spacer patterns to be subsequently formed.
1. A method of forming a semiconductor structure comprising:
forming a set of first mandrel structures on a substrate;
removing at least one first mandrel structure from the set of first mandrel structures;
forming a set of second mandrel structures over remaining first mandrel structures and portions of the substrate, wherein each second mandrel structure overlaps at least a portion of at least one first mandrel structure of the remaining first mandrel structures and fills at least a portion of at least one space between adjacent first mandrel structures of the remaining first mandrel structures;
forming first spacer portions on exposed sidewalls of the remaining first mandrel structures and second spacer portions on exposed sidewalls of the second mandrel structures;
removing the remaining first mandrel structures and the second mandrel structures selective to the first spacer portions and second spacer portions; and
transferring a pattern of the first spacer portions and the second spacer portions into a portion of the substrate.
2. The method of claim 1 , wherein each second mandrel structure comprises a material different from a material of each first mandrel structure.
3. The method of claim 2 , wherein each first mandrel structure comprises silicon and each second mandrel structure comprises silicon germanium.
4. The method of claim 3 , further comprising removing portions of the first spacer portions and the second spacer portions prior to the transferring the pattern of the first spacer portions and the second spacer portions into the portion of the substrate.
5. The method of claim 4 , wherein the removing the portions of the first spacer portions and the second spacer portions comprising:
forming a cut mask over portions the first spacer portions and the second spacer portions; and
removing exposed portions of the first spacer portions and the second spacer portions.
6. The method of claim 5 , further comprising removing the cut mask selective to remaining portions of the first spacer portions and the second spacer portions.
7. The method of claim 6 , further comprising removing the remaining portions of the first spacer portions and the second spacer portions after the transferring the pattern of the spacers into the portion of the substrate.
8. The method of claim 1 , wherein the first mandrel structures are spaced apart from one another along a widthwise direction perpendicular to a lengthwise direction of each first mandrel structure.
9. The method of claim 1 , wherein the portion of the substrate comprises a semiconductor material.
10. The method of claim 1 , wherein the forming the set of first mandrel structures comprises:
depositing a first mandrel material layer on an entire topmost surface of the substrate; and
patterning the first mandrel material layer by lithography and etching.
11. The method of claim 10 , wherein the topmost surface of the substrate is a semiconductor material surface.
12. The method of claim 10 , wherein the topmost surface of the substrate is a dielectric material surface provided by a pad layer comprised of silicon nitride or a bilayer of silicon nitride and silicon oxide.
13. The method of claim 1 , wherein the forming the set of second mandrel structures comprises:
depositing a second mandrel material layer over the remaining first mandrel structures and exposed surfaces of the substrate; and
patterning the second mandrel layer by lithography and etching.
14. The method of claim 1 , wherein a spacing between a first spacer portion and an adjacent second spacer portion is determined by a width of a second mandrel structure on which the second spacer portion is formed.
15. The method of claim 1 , wherein the forming the first spacer portions on the exposed sidewalls of the remaining first mandrel structures and the second spacer portions on the exposed sidewalls of the second mandrel structures comprises:
forming a conformal spacer material layer over the first mandrel structures, the second mandrel structure and exposed surfaces of the substrate; and
removing horizontal portions of the spacer material layer by an anisotropic etch.
16. The method of claim 15 , wherein the forming the conformal spacer material layer is performed by chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD).
17. The method of claim 1 , wherein the removing the at least one first mandrel structure from the set of first mandrel structures is performed by an anisotropic etch.