Organoaminodisilane precursors and methods for depositing films comprising same
View Patent ↗Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
1. A composition comprising at least one organoaminodisilane selected from the group consisting of di-iso-probylaminodisilane, di-sec-butylaminodisilane, di-tert-butylaminodisilane, 2,6-dimethylpiperidinodisilane, 2,2,6,6-tetramethylpiperidinodisilane, cyclohexyl-iso-probylaminodisilane, phenylmethylaminodisilane, phenylethylaminodisilane, di-cyclohexylaminodisilane, trans-decahydroguinolinyldisilane, 1,1-bis(t-butylamino)disilane, 1,1-bis(tert-pentylamino)disilane, 1,1-bis(iso-propylamino)disilane, 1,1-bis(iso-propylmethlamino)disilane, 1,1-dipiperidinodisilane, 1,1-dipyrrolidinodisilane, 1,1-di(2,6-dimethylpiperidino)disilane, and 1,1-bis(di-sec-butylamino)disilane;
wherein the composition is substantially free of halide ions.
2. The composition of claim 1 wherein the organoaminodisilane is selected from the group consisting of di-iso-propylaminodisilane, di-sec-butylaminodisilane, 2,6-dimethylpiperidinodisilane, phenylmethylaminodisilane, and phenylethylaminodisilane.
3. The composition of claim 2 wherein the organoaminodisilane comprises di-iso-propylaminodisilane.
4. The composition of claim 2 wherein the organoaminodisilane comprises di-sec-butylaminodisilane.
5. The composition of claim 2 wherein the organoaminodisilane comprises 2,6-dimethylpiperidinodisilane.
6. The composition of claim 2 wherein the organoaminodisilane comprises phenylethylaminodisilane.
7. The composition of claim 1 wherein the halide ions are chloride ions.
8. The composition of claim 7 , which comprises less than 5 ppm of chloride ions.
9. The composition of claim 7 , which comprises less than 3 ppm of chloride ions.
10. The composition of claim 7 , which comprises less than 1 ppm of chloride ions.
11. A composition comprising:
(a) at least one organoaminodisilane selected from the group consisting of di-iso-propylaminodisilane, di-sec-butylaminodisilane, di-tert-butylaminodisilane, 2,6-dimethylpiperidinodisilane, 2,2,6,6-tetramethylpiperidinodisilane, cyclohexvl-iso-propylaminodisilane, phenylmethylaminodisilane, phenylethylaminodisilane, di-cyclohexylaminodisilane, trans-decahydroguinolinyldisilane, 1,1-(N,N′-di-tert-butylethylenediamino)disilane, 1,1-(N,N′-di-iso-propylethylenediamino)disilane, 1,1-bis(t-butylamino)disilane, 1,1-bis(tert-pentylamino)disilane, 1,1-bis(iso-propylamino)disilane, 1,1-bis(iso-propylmethlamino)disilane, 1,1-dipiperidinodisilane, 1,1-dipyrrolidinodisilane, 1,1-bis(diethylamino)disilane, 1,1-bis(di-iso-propylamino)disilane, 1,1-di(2,6-dimethylpiperidino)disilane, and 1,1-bis(di-sec-butylamino)disilane; and
(b) a solvent, wherein the solvent has a boiling point, wherein the difference between the boiling point of the solvent and that of the at least one organoaminodisilane is 40° C. or less, and wherein the composition is substantially free of halide ions.
12. The composition of claim 11 wherein the organoaminodisilane comprises at least one of di-iso-propylaminodisilane, di-sec-butylaminodisilane, 2,6-dimethylpiperidinodisilane,-phenylmethylaminodisilane, and phenylethylaminodisilane.
13. The composition of claim 11 wherein the solvent comprises at least one selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.
14. The composition of claim 11 , wherein the halide ions are chloride ions.
15. The composition of claim 14 , which comprises less than 5 ppm of chloride ions.
16. The composition of claim 14 , which comprises less than 3 ppm of chloride ions.
17. The composition of claim 14 , which comprises less than 1 ppm of chloride ions.
18. The composition of claim 1 further comprising a nitrogen-containing source wherein the at least one organoaminodisilane and the nitrogen-containing source can react to form a silicon containing film.
19. The composition of claim 18 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof.
20. The composition of claim 18 wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.