Methods of forming an improved via to contact interface by selective formation of a metal silicide capping layer
One illustrative method disclosed herein includes, among other things, forming an opening in at least one layer of insulating material so as to thereby expose at least a portion of a conductive contact, performing a selective metal silicide formation process to selectively form a metal silicide layer in the opening and on the conductive contact, depositing at least one conductive material above the selectively formed metal silicide layer so as to over-fill the opening, and performing at least one planarization process so as to remove excess materials and thereby define a conductive via that is positioned in the opening and conductively coupled to the selectively formed metal silicide layer and to the conductive contact.
1. A method, comprising:
forming an opening in at least one layer of insulating material positioned above a conductive contact that is conductively coupled to a transistor device so as to thereby expose at least a portion of said conductive contact;
performing a selective metal silicide formation process to selectively form a metal silicide layer in said opening and on said conductive contact, wherein performing said selective metal silicide formation process comprises generating a plasma environment at a temperature of 400° C. or less and introducing a silicon-containing precursor gas into said plasma environment;
depositing at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening; and
performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said selectively formed metal silicide layer and to said conductive contact.
2. The method of claim 1 , wherein said conductive contact is conductively coupled to one of a source region, a drain region or a gate electrode of said transistor device.
3. The method of claim 1 , wherein said conductive contact has a void formed therein.
4. The method of claim 3 , wherein said selective metal silicide formation process is performed such that said selectively formed metal silicide layer substantially fills at least an upper portion of said void in said conductive contact.
5. The method of claim 1 , wherein said conductive contact as initially formed is substantially free of voids.
6. The method of claim 5 , wherein said selective metal silicide formation process is performed such that said selectively formed metal silicide layer is formed in said opening above said conductive contact that is substantially free of voids.
7. The method of claim 1 , wherein said selectively formed metal silicide layer is comprised of tantalum silicide, cobalt silicide or ruthenium silicide.
8. The method of claim 1 , wherein depositing said at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening comprises depositing a copper-based material above said selectively formed metal silicide layer so as to over-fill said opening.
9. The method of claim 1 , wherein depositing said at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening comprises forming at least one conductive barrier layer and at least one conductive adhesion layer in said opening, wherein said conductive barrier layer is comprised of tantalum nitride and said conductive adhesion layer comprises a layer of tantalum.
10. The method of claim 1 , wherein said selective metal silicide formation process is performed such that sidewalls of said opening in said at least one layer of insulating material along an entire vertical height of said conductive via are substantially free of said selectively formed metal silicide layer.
11. A method, comprising:
forming at least one layer of insulating material above a conductive contact that is conductively coupled to a transistor device, wherein said conductive contact has a void formed therein;
forming an opening in said at least one layer of insulating material so as to expose at least a portion of said conductive contact and said void;
performing a selective metal silicide formation process to selectively form a metal silicide layer in said opening and on said conductive contact and above said void in said conductive contact, wherein performing said selective metal silicide formation process comprises generating a plasma environment at a temperature of 400° C. or less and introducing a silicon-containing precursor gas into said plasma environment;
depositing at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening; and
performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said metal silicide layer and said conductive contact, wherein said selective metal silicide formation process is performed such that sidewalls of said opening in said at least one layer of insulating material along an entire vertical height of said conductive via are substantially free of said metal silicide layer.
12. The method of claim 11 , wherein said selective metal silicide formation process is performed such that said metal silicide layer at least partially fills at least an upper portion of said void in said conductive contact.
13. The method of claim 11 , wherein depositing said at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening comprises depositing a copper-based material.
14. The method of claim 11 , wherein depositing said at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening comprises forming a layer of tantalum nitride and a layer of tantalum.