Image sensor using backside illumination photodiode and method for manufacturing the same
A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.
1. An image sensor using backside illumination photodiodes, comprising:
a plurality of first metal layers formed in a first wafer including a plurality of backside illumination photodiodes which sense light incident from a backside and output signals and a plurality of transfer transistors which transfer the signals outputted from the backside illumination photodiodes, to floating diffusion nodes, the plurality of first metal layers being electrically connected with the floating diffusion nodes, respectively;
a plurality of second metal layers formed in a second wafer including a plurality of pixel transistors which process signals transferred through the floating diffusion nodes and transfer processed signals, the plurality of second metal layers being electrically connected with the pixel transistors, respectively;
a plurality of first bonding vias formed in the first wafer, and having one ends which are electrically connected to the first metal layers, respectively; and
a plurality of second bonding vias formed in the second wafer, and having one ends which are electrically connected to the second metal layers, respectively, and the other ends which are electrically connected to the other ends of the first bonding vias, respectively,
wherein the first bonding vias are formed to have inclined surfaces in the case where a size of the first metal layers is smaller than a size of the second metal layers, and the second bonding vias are formed to have inclined surfaces in the case where a size of the first metal layers is larger than a size of the second metal layers.
2. The image sensor according to claim 1 , wherein the first bonding vias and the second bonding vias are formed to have the same contact area.
3. The image sensor according to claim 1 , wherein an angle of the inclined surfaces is 3° to 10°.
4. The image sensor according to claim 1 , wherein the second wafer further includes logic transistors for processing the signals outputted through the pixel transistors.
5. The image sensor according to claim 1 , wherein the pixel transistors comprise at least ones of:
drive transistors electrically connected to a power terminal through one terminals thereof, and configured to be driven according to voltages supplied continuously through the floating diffusion nodes and gates thereof and output output voltages corresponding to the light sensed through the backside illumination photodiodes, through the other terminals thereof;
select transistors electrically connected to the other terminals of the drive transistors through one terminals thereof, and configured to selectively output the output voltages of the drive transistors according to a select control signal supplied through gates thereof; and
reset transistors configured to supply a voltage of the power terminal to the gates of the drive transistors, and reset the floating diffusion nodes, in a reset mode.
6. A method for manufacturing an image sensor using backside illumination photodiodes, comprising:
(a) forming a plurality of backside illumination photodiodes which sense light incident from a backside and output signals and a plurality of transfer transistors which transfer the output signals of the backside illumination photodiodes to floating diffusion nodes, in a first wafer having a plurality of first metal layers, and forming a plurality of first bonding vias which are electrically connected with the floating diffusion nodes, in an interlayer dielectric layer of the first wafer;
(b) forming a plurality of pixel transistors for processing the output signals of the backside illumination photodiodes and transferring processed signals, in a second wafer having a plurality of second metal layers, and forming a plurality of second bonding vias which are electrically connected with the pixel transistors, in an interlayer dielectric layer of the second wafer; and
(c) bonding the first wafer and the second wafer, and electrically connecting the first bonding vias and the second bonding vias with each other,
wherein the first bonding vias are formed to have inclined surfaces in the case where a size of the first metal layers is smaller than a size of the second metal layers, and the second bonding vias are formed to have inclined surfaces in the case where a size of the first metal layers is larger than a size of the second metal layers.
7. The method according to claim 6 , further comprising:
performing a passivation process, a color filter forming process, a microlens forming process and a pad forming process, after completing (c).
8. The method according to claim 6 , wherein the pixel transistors comprise at least ones of:
drive transistors electrically connected to a power terminal through one terminals thereof, and configured to be driven according to voltages supplied continuously through the floating diffusion nodes and gates thereof and output output voltages corresponding to the light sensed through the backside illumination photodiodes, through the other terminals thereof;
select transistors electrically connected to the other terminals of the drive transistors through one terminals thereof, and configured to selectively output the output voltages of the drive transistors according to a select control signal supplied through gates thereof; and
reset transistors configured to supply a voltage of the power terminal to the gates of the drive transistors, and reset the floating diffusion nodes, in a reset mode.