Substrate cleaning method, substrate cleaning system, and memory medium

1. A method for cleaning a substrate, comprising:

supplying to a substrate a film-forming processing liquid which includes resin and a volatile component;

vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film that captures and contains particles adhered to a surface of the substrate on the substrate;

supplying to the substrate having the processing film a strip-processing liquid which strips the processing film containing the particles from the substrate such that the strip-processing liquid infiltrates between the processing film and the substrate without dissolving the processing film into a liquid state; and

supplying to the processing film a dissolving-processing liquid which dissolves the processing film stripped by the strip-processing liquid after the supplying of the strip-processing liquid such that the dissolving-processing liquid dissolves the processing film stripped by the strip-processing liquid,

wherein the substrate is one of a silicon wafer and a compound semiconductor wafer, wherein the substrate has a pattern formed on a surface thereof, wherein the dissolving-processing liquid is a liquid that dissolves the processing film and that is selected from the group consisting of an alkali developing solution having a first alkali concentration that dissolves the processing film into the liquid state and an isopropyl alcohol (IPA) and water solution having a first IPA concentration that dissolves the processing film into the liquid state, and wherein the strip-processing liquid is a liquid that does not dissolve the processing film into the liquid state before the supplying of the dissolving-processing liquid and that is selected from the group consisting of pure water, an alkali developing solution having a second alkali concentration that is lower than the first alkali concentration an IPA and water solution having a second IPA concentration that is lower than the first IPA concentration, and water mixed with CO 2 gas.

2. The method for cleaning a substrate according to claim 1 , wherein the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the substrate without a resist layer on the substrate.

3. The method for cleaning a substrate according to claim 1 , wherein the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the surface having the pattern.

4. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is pure water.

5. The method for cleaning a substrate according to claim 4 , wherein the pure water is heated pure water.

6. The method for cleaning a substrate according to claim 1 , wherein the substrate has a silicon nitride film forming a surface of the substrate.

7. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is a low concentration dissolving-processing liquid which is a lower concentration liquid of the dissolving-processing liquid such that the low concentration dissolving-processing liquid infiltrates between the processing film and the substrate without dissolving the processing film into the liquid state.

8. The method for cleaning a substrate according to claim 7 , wherein the supplying of the strip-processing liquid includes supplying the alkali developing solution having the second alkali concentration, and the supplying of the dissolving-processing liquid includes supplying the alkali developing solution having the first alkali concentration.

9. The method for cleaning a substrate according to claim 1 , wherein the supplying of the dissolving-processing liquid includes changing a concentration of the dissolving-processing liquid from one concentration to a higher concentration.

10. The method for cleaning a substrate according to claim 7 , wherein the dissolving-processing liquid comprises the IPA and water solution having the first IPA concentration, and the strip-processing liquid comprises the IPA and water solution having the second IPA concentration.

11. The method for cleaning a substrate according to claim 1 , wherein the dissolving-processing liquid comprises the alkali developing solution having the first concentration, wherein the first concentration is a concentration of 1.0% or higher, and the strip-processing liquid comprises the dissolving-processing liquid having an alkali concentration of 0.5% or lower.

12. The method for cleaning a substrate according to claim 1 , wherein the dissolving-processing liquid is the alkali developing solution of the first alkali concentration and comprises at least one of a quarternary ammonium hydroxide and choline, and the strip-processing liquid is the alkali developing solution of the second alkali concentration and comprises at least one of a quarternary ammonium hydroxide and choline.

13. The method for cleaning a substrate according to claim 1 , further comprising:

rinsing off the particles and the dissolving-processing liquid from the surface of the substrate.

14. The method for cleaning a substrate according to claim 1 , wherein the pure water is heated pure water having a temperature of 75° C. or lower.

15. The method for cleaning a substrate according to claim 1 , wherein the film-forming processing liquid is a topcoat solution.

16. The method for cleaning a substrate according to claim 1 , wherein the film-forming processing liquid is a topcoat solution, and the resin in the topcoat solution comprises acrylic resin.

17. The method for cleaning a substrate according to claim 4 , wherein the film-forming processing liquid is a topcoat solution, and the resin in the topcoat solution comprises acrylic resin.

18. The method for cleaning a substrate according to claim 8 , wherein the film-forming processing liquid is a topcoat solution, and the resin in the topcoat solution comprises acrylic resin.