Edge termination by ion implantation in gallium nitride
View Patent ↗A method of making an edge terminated semiconductor device includes providing a GaN substrate having a GaN epitaxial layer grown thereon and exposing a portion of the GaN epitaxial layer to ion implantation. The energy dose is selected to provide a resistivity that is at least 90% of maximum achievable resistivity. The method also includes depositing a conductive layer over a portion of the implanted region.
1. A method of making an edge terminated semiconductor device, comprising:
providing a GaN substrate having a GaN epitaxial layer grown thereon;
exposing a portion of the GaN epitaxial layer to ion implantation to form an implanted region, wherein the energy dose is selected to provide a resistivity of the implanted region that is at least 90% of maximum achievable resistivity;
forming an insulating layer on the implanted region while leaving a portion of the implanted region exposed; and
depositing a conductive layer over the exposed portion of the implanted region and a portion of the insulating layer.
2. The method of claim 1 , wherein exposing the GaN epitaxial layer to ion implantation comprises multiple implants at different energies and/or dosages selected to create a uniform layer of lattice damage.
3. The method of claim 2 , wherein the multiple implants comprises two or more implants at increasing energy and/or different doses.
4. The method of claim 1 , wherein exposing the GaN epitaxial layer to ion implantation comprises exposing the GaN epitaxial layer to one or more implants selected to provide an implant depth of greater than 450 nm.
5. The method of claim 1 , wherein the implant ion is selected from the group consisting of nitrogen, argon, helium, or other elements, and mixtures thereof.
6. The method of claim 1 , wherein the conductive layer comprises a Schottky metal.
7. The method of claim 1 , wherein the conductive layer comprises p+ GaN.
8. The method of claim 1 , wherein an overlap of conductive layer over the exposed portion of the implanted region is about 0.5 μm to about 10 μm.
9. The method of claim 1 , wherein the resistivity is greater than 10 10 Ohms/sq.
10. The method of claim 1 , wherein the GaN epitaxial layer is n-doped.
11. The method of claim 1 , wherein the implanted region comprises a distribution of implanted ions.
12. The method of claim 2 , wherein the multiple implants comprise a mean ion-implanted ion concentration greater than 10 18 cm −3 .