Patent Assignment
Reel/Frame 054244/0822
Security Interest
Recorded: 2020-10-23
Pages: 20
Assignor
NEXGEN POWER SYSTEMS, INC.
Executed: 2020-10-20
Assignee
SOUTH LAKE ONE LLC
21013 CENTRE ROAD, SUITE 403-B, WILMINGTON, DELAWARE, 19805
Covered Properties
(92)
Method and System for Super-Junction Based Vertical Gallium Nitride Jfet and Mosfet Power Devices
Application:
63/040,853 →
Method and System for Etch Depth Control in Iii-V Semiconductor Devices
Application:
63/044,693 →
Method and System for Regrown Source Contacts for Vertical Gallium Nitride Based Fets
Application:
63/000,968 →
High Power Gallium Nitride Electronics Using Miscut Substrates
Method and System for Fabrication of a Vertical Fin-Based Field Effect Transistor
Method and System for Jfet with Implant Isolation
Application:
62/953,059 →
REGROWTH UNIFORMITY IN GaN VERTICAL DEVICES
Application:
62/956,467 →
Method and System for Fabricating Fiducials Using Selective Area Growth
Method and System of Junction Termination Extension in High Voltage Semiconductor Devices
Application:
63/049,562 →
Self-Aligned Isolation for Self-Aligned Contacts for Vertical Fets
Application:
63/051,979 →
Edge Termination by Ion Implantation in Gan
Edge Termination by Ion Implantation in Gallium Nitride
Ingan Ohmic Source Contacts for Vertical Power Devices
Ingan Ohmic Source Contacts for Vertical Power Devices
Method and System for a Gan Vertical Jfet Utilizing a Regrown Gate
Method and System for a Gan Vertical Jfet Utilizing a Regrown Channel
Method and System for a Gan Vertical Jfet Utilizing a Regrown Channel
Method and System for Doping Control in Gallium Nitride Based Devices
Method and System for Doping Control in Gallium Nitride Based Devices
Method and System for Formation of P-N Junctions in Gallium Nitride Based Electronics
Method and System for Local Control of Defect Density in Gallium Nitride Based Electronics
Monolithically Integrated Vertical Jfet and Schottky Diode
Monolithically Integrated Vertical Jfet and Schottky Diode
Monolithically Integrated Vertical Jfet and Schottky Diode
Method and System for Floating Guard Rings in Gallium Nitride Materials
Method and System for Diffusion and Implantation in Gallium Nitride Based Devices
Method and System for Diffusion and Implantation in Gallium Nitride Based Devices
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode
Vertical Gan-Based Metal Insulator Semiconductor Fet
Gallium Nitride-Based Schottky Barrier Diode with Aluminum Gallium Nitride Surface Layer
Gan-Based Schottky Barrier Diode with Algan Surface Layer
Gan-Based Schottky Barrier Diode with Field Plate
Aluminum Gallium Nitride Etch Stop Layer for Gallium Nitride Based Devices
Aluminum Gallium Nitride Etch Stop Layer for Gallium Nitride Based Devices
Method and System for a Gan Self-Aligned Vertical Mesfet
Method and System for a Gallium Nitride Self-Aligned Vertical Mesfet
Method of Fabricating a Gan P-I-N Diode Using Implantation
Method of Fabricating a Gallium Nitride P-I-N Diode Using Implantation
Method of Fabricating a Gan P-I-N Diode Using Implantation
Method and System for Carbon Doping Control in Gallium Nitride Based Devices
Method and System for Carbon Doping Control in Gallium Nitride Based Devices
Schottky Diode with Buried Layer in Gan Materials
Schottky Diode with Buried Layer in Gan Materials
Method and System for Fabricating Floating Guard Rings in Gan Materials
Method and System for Fabricating Floating Guard Rings in Gan Materials
Fabrication of Floating Guard Rings Using Selective Regrowth
Vertical Gan Jfet with Gate Source Electrodes on Regrown Gate
Vertical Gallium Nitride Jfet with Gate and Source Electrodes on Regrown Gate
Vertical Gallium Nitride Jfet with Gate and Source Electrodes on Regrown Gate
Method and System for Junction Termination in Gan Materials Using Conductivity Modulation
Method and System for Junction Termination in Gan Materials Using Conductivity Modulation
Method and System for Planar Regrowth in Gan Electronic Devices
Method and System for Planar Regrowth in Gan Electronic Devices
Method and System for a Gan Vertical Jfet with Self-Aligned Source and Gate
Method and System for a Gallium Nitride Vertical Jfet with Self-Aligned Source and Gate
Method and System for Fabricating Edge Termination Structures in Gan Materials
Gan Vertical Superjunction Device Structures and Fabrication Methods
Gan Vertical Superjunction Device Structures and Fabrication Methods
Method and System for a Gallium Nitride Vertical Jfet with Self-Aligned Gate Metallization
Method and System for a Gan Vertical Jfet with Self-Aligned Source Metallization
Vertical Gan Jfet with Low Gate-Drain Capacitance and High Gate-Source Capacitance
VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOURCE CAPACITANCE
Gan Power Device with Solderable Back Metal
Gan Power Device with Solderable Back Metal
Method and System for Gallium Nitride Electronic Devices Using Engineered Substrates
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode by Regrowth and Etch Back
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode by Regrowth and Etch Back
Bondable Top Metal Contacts for Gallium Nitride Power Devices
Ac-Dc Converter for Wide Range Output Voltage and High Switching Frequency
Ac-Dc Converter for Wide Range Output Voltage and High Switching Frequency
Method and System for in-Situ Etch and Regrowth in Gallium Nitride Based Devices
Method and System for in-Situ Etch and Regrowth in Gallium Nitride Based Devices
Gan Vertical Bipolar Transistor
Lateral Gan Jfet with Vertical Drift Region
Method and System for Co-Packaging Gallium Nitride Electronics
Method and System for a Gallium Nitride Vertical Transistor
Vertical Gan Power Device with Breakdown Voltage Control
Vertical Gallium Nitride Power Device with Breakdown Voltage Control
Gallium Nitride Field Effect Transistor with Buried Field Plate Protected Lateral Channel
Method of Fabricating a Merged P-N Junction and Schottky Diode with Regrown Gallium Nitride Layer
Method of Fabricating a Merged P-N Junction and Schottky Diode with Regrown Gallium Nitride Layer
Method and System for Co-Packaging Vertical Gallium Nitride Power Devices
Method and System for Operating Gallium Nitride Electronics
Patent:
8,947,154 →
Application:
14/045,708 →
High Power Gallium Nitride Electronics Using Miscut Substrates
High Power Gallium Nitride Electronics Using Miscut Substrates
High Power Gallium Nitride Electronics Using Miscut Substrates
Ac-Dc Converter with Adjustable Output
Method and System for Interleaved Boost Converter with Co-Packaged Gallium Nitride Power Devices
Adaptive Synchronous Switching in a Resonant Converter
Power Supply
Patent:
728,475 →
Application:
29/501,217 →
Power Supply
Patent:
762,573 →
Application:
29/525,732 →
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 17, 2012
From: BOUR, DAVID P.; ROMANO, LINDA; PRUNTY, THOMAS R.; KIZILYALLI, ISIK C.
To: EPOWERSOFT, INC.
Reel/Frame 028570/0172 →
Change of Name
Jul 17, 2012
From: EPOWERSOFT, INC.
To: AVOGY, INC.
Reel/Frame 028583/0134 →
Assignment of Assignor's Interest
Jul 17, 2012
From: KIZILYALLI, ISIK C.; NIE, HUI; EDWARDS, ANDREW P.; ROMANO, LINDA
To: EPOWERSOFT, INC.
Reel/Frame 028569/0981 →
Change of Name
Jul 19, 2012
From: EPOWERSOFT, INC.
To: AVOGY, INC.
Reel/Frame 028600/0775 →
Security Interest
Apr 1, 2014
From: AVOGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 032611/0010 →
Change of Name
Dec 4, 2014
From: EPOWERSOFT INC.
To: AVOGY, INC.
Reel/Frame 034535/0441 →
Change of Name
Feb 9, 2015
From: EPOWERSOFT, INC.
To: AVOGY, INC.
Reel/Frame 034924/0722 →
Assignment of Assignor's Interest
Feb 9, 2015
From: KIZILYALLI, ISIK C.; NIE, HUI; EDWARDS, ANDREW P.; ROMANO, LINDA
To: EPOWERSOFT, INC.
Reel/Frame 034922/0174 →
Change of Name
Apr 6, 2015
From: EPOWERSOFT, INC.
To: AVOGY, INC.
Reel/Frame 035375/0351 →
Assignment of Assignor's Interest
Apr 6, 2015
From: KIZILYALLI, ISIK C.; NIE, HUI; EDWARDS, ANDREW P.; ROMANO, LINDA
To: EPOWERSOFT, INC.
Reel/Frame 035342/0745 →
Assignment of Assignor's Interest
Jul 31, 2015
From: ROMANO, LINDA; EDWARDS, ANDREW; BOUR, DAVE P.; KIZILYALLI, ISIK C.
To: AVOGY INC,
Reel/Frame 036228/0751 →
Assignment of Assignor's Interest
Feb 2, 2018
From: AVOGY, INC.
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 045229/0547 →
Release of Security Interest
Feb 13, 2018
From: SILICON VALLEY BANK
To: AVOGY, INC.
Reel/Frame 045317/0963 →
Corrective Assignment to Correct the Assignor from Avogy, Inc. to Avogy (Abc), Llc Previously Recorded on Reel 045229 Frame 0547. Assignor(S) Hereby Confirms the Assignment.
Dec 13, 2018
From: AVOGY (ABC), LLC
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 047827/0774 →
Assignment of Assignor's Interest
Dec 18, 2018
From: AVOGY, INC.
To: AVOGY (ABC), LLC
Reel/Frame 047951/0967 →
Assignment of Assignor's Interest
Apr 17, 2020
From: DROWLEY, CLIFFORD; EDWARDS, ANDREW; PIDAPARTHI, SUBHASH SRINIVAS; SHARIFZADEH, SHAHIN
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 052427/0001 →
Assignment of Assignor's Interest
Jun 23, 2020
From: CUI, HAO; DROWLEY, CLIFFORD
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 053013/0461 →
Assignment of Assignor's Interest
Jun 29, 2020
From: CHEN, WAYNE; EDWARDS, ANDREW; DROWLEY, CLIFFORD; PIDAPARTHI, SUBHASH SRINIVAS
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 053079/0494 →
Assignment of Assignor's Interest
Nov 16, 2020
From: DROWLEY, CLIFFORD; MILANO, RAY; PIDAPARTHI, SUBHASH SRINIVAS; EDWARDS, ANDREW P.
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 054373/0749 →
Assignment of Assignor's Interest
Nov 16, 2020
From: DROWLEY, CLIFFORD; EDWARDS, ANDREW; PIDAPARTHI, SUBHASH SRINIVAS; MILANO, RAY
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 054373/0254 →
Assignment of Assignor's Interest
May 19, 2021
From: DROWLEY, CLIFFORD; MILANO, RAY; PIDAPARTHI, SUBHASH SRINIVAS; EDWARDS, ANDREW P.
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 056287/0234 →
Assignment of Assignor's Interest
Jun 11, 2021
From: DROWLEY, CLIFFORD; CUI, HAO; EDWARDS, ANDREW; PIDAPARTHI, SUBHASH SRINIVAS
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 056513/0291 →
Assignment of Assignor's Interest
Jun 11, 2021
From: PIDAPARTHI, SUBHASH SRINIVAS; EDWARDS, ANDREW; DROWLEY, CLIFFORD; PATEL, KEDAR
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 056512/0995 →
Release of Security Interest
Jul 26, 2021
From: SOUTH LAKE ONE LLC
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 056973/0477 →
Assignment of Assignor's Interest
Aug 30, 2021
From: DROWLEY, CLIFFORD; MILANO, RAY; ROUTH, ROBERT; PIDAPARTHI, SUBHASH SRINIVAS
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 057333/0224 →