Granted Patent B2

US 9,059,199 · App. 13/735,912 · Granted Jun 16, 2015

Abstract

Claims (15)

1. A vertical JFET comprising:

a GaN substrate comprising a drain of the JFET;

a plurality of patterned epitaxial layers coupled to the GaN substrate, wherein:

a distal epitaxial layer with respect to the GaN substrate comprises a first part of a source channel, and

portions of adjacent patterned epitaxial layers are separated by a gap having a predetermined distance;

a plurality of regrown epitaxial layers coupled to the distal epitaxial layer and disposed in at least a portion of the gap, wherein a proximal regrown epitaxial layer with respect to the GaN substrate comprises a second part of the source channel;

a source contact passing through portions of a distal regrown epitaxial layer with respect to the GaN substrate and in electrical contact with the source channel;

a gate contact in electrical contact with a distal regrown epitaxial layer with respect to the GaN substrate; and

a drain contact in electrical contact with the GaN substrate.

2. The vertical JFET of claim 1 further comprising a second gate contact in electrical contact with a proximal epitaxial layer with respect to the GaN substrate.

3. The vertical JFET of claim 1 wherein the plurality of patterned epitaxial layers are arrayed hexagonally.

4. The vertical JFET of claim 3 wherein each of the plurality of patterned epitaxial layers include sidewalls substantially aligned with respect to crystal planes of the GaN substrate.

5. The vertical JFET of claim 4 wherein the crystal planes are m-planes of the GaN substrate.

6. The vertical JFET of claim 4 wherein the proximal regrown epitaxial layer is regrown on the sidewalls.

7. The vertical JFET of claim 1 wherein the first part of the source channel is adjacent the source contact and the second part of the source channel is adjacent the proximal epitaxial layer.

Assignments (12)