Patent Assignment
Reel/Frame 045317/0963
Release of Security Interest
Recorded: 2018-02-13
Pages: 20
Assignor
SILICON VALLEY BANK
Executed: 2018-02-05
Assignee
AVOGY, INC.
677 RIVER OAKS PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties
(79)
Method and System for Doping Control in Gallium Nitride Based Devices
PCT:
PCT/US2012/048194 ↗
Method and System for a Gan Vertical Jfet Utilizing a Regrown Channel
PCT:
PCT/US2012/049520 ↗
Method and System for a Gan Vertical Jfet Utilizing a Regrown Gate
PCT:
PCT/US2012/049549 ↗
Method and System for Diffusion and Implantation in Gallium Nitride Based Devices
PCT:
PCT/US2012/056101 ↗
Method of Fabricating a Gan Merged P-I-N Schottky (Mps) Diode
PCT:
PCT/US2012/059245 ↗
Schottky Diode with Buried Layer in Gan Materials
PCT:
PCT/US2012/059250 ↗
Method and System Fabricating Floating Guard Rings in Gan Materials
PCT:
PCT/US2012/062717 ↗
Monolithically Integrated Vertical Jfet and Schottky Diode
PCT:
PCT/US2012/062728 ↗
Method and System for a Gan Self-Aligned Vertical Mesfet
PCT:
PCT/US2012/065954 ↗
Vertical Gan Jfet with Gate and Source Electrodes on Regrown Gate
PCT:
PCT/US2012/066669 ↗
Method of Fabricating a Gallium Nitride P-I-N Diode Using Implantation
PCT:
PCT/US2012/068972 ↗
Method and System for Junction Termination in Gallium Nitride Materials Using Conductivity Modulation
PCT:
PCT/US2012/069251 ↗
Method and System for a Gallium Nitride Vertical Jfet with Self-Aligned Source and Gate
PCT:
PCT/US2012/069299 ↗
Method and System for Gallium Nitride Electronic Devices Using Engineered Substrates
PCT:
PCT/US2013/053702 ↗
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode by Regrowth and Etch Back
PCT:
PCT/US2013/053751 ↗
Lateral Gan Jfet with Vertical Drift Region
PCT:
PCT/US2013/069469 ↗
High Power Density Off-Line Power Supply
PCT:
PCT/US2013/071522 ↗
Gallium Nitride Vertical Jfet with Hexagonal Cell Structure
PCT:
PCT/US2013/076007 ↗
Method and System for a Gallium Nitride Vertical Transistor
PCT:
PCT/US2013/076009 ↗
Controlled Doping in III-V Materials
Application:
13/079,710 →
Publication:
US 2012/0248577
Electrical Isolation Of High Defect Density Regions In A Semiconductor Device
Application:
13/180,758 →
Publication:
US 2013/0015552
Method and System for a Gan Vertical Jfet Utilizing a Regrown Gate
Method and System for a Gan Vertical Jfet Utilizing a Regrown Channel
Method and System for Doping Control in Gallium Nitride Based Devices
Method and System for Formation of P-N Junctions in Gallium Nitride Based Electronics
Method and System for Local Control of Defect Density in Gallium Nitride Based Electronics
Method and System for Diffusion and Implantation in Gallium Nitride Based Devices
Monolithically Integrated Hemt and Schottky Diode
Application:
13/267,552 →
Publication:
US 2013/0087803
Method and System for Floating Guard Rings in Gallium Nitride Materials
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode
Schottky Diode with Buried Layer in Gan Materials
Monolithically Integrated Vertical Jfet and Schottky Diode
Aluminum Gallium Nitride Etch Stop Layer for Gallium Nitride Based Devices
Method and System for Fabricating Floating Guard Rings in Gan Materials
Gallium Nitride-Based Schottky Barrier Diode with Aluminum Gallium Nitride Surface Layer
Gan-Based Schottky Barrier Diode with Field Plate
Edge Termination by Ion Implantation in Gan
Method and System for Carbon Doping Control in Gallium Nitride Based Devices
In-Situ Sin Growth to Enable Schottky Contact for Gan Devices
Application:
13/312,055 →
Publication:
US 2013/0143392
Vertical Gan-Based Metal Insulator Semiconductor Fet
Vertical Gan Jfet with Gate Source Electrodes on Regrown Gate
Ingan Ohmic Source Contacts for Vertical Power Devices
Method and System for a Gan Vertical Jfet with Self-Aligned Source and Gate
Method and System for Junction Termination in Gan Materials Using Conductivity Modulation
Method of Fabricating a Gan P-I-N Diode Using Implantation
Fabrication of Floating Guard Rings Using Selective Regrowth
Method and System for Fabricating Edge Termination Structures in Gan Materials
Method and System for a Gan Self-Aligned Vertical Mesfet
Method and System for Planar Regrowth in Gan Electronic Devices
Method and System for a Gallium Nitride Vertical Jfet with Self-Aligned Gate Metallization
Method and System for a Gan Vertical Jfet with Self-Aligned Source Metallization
Gan Vertical Superjunction Device Structures and Fabrication Methods
Gan Power Device with Solderable Back Metal
Method and System for in-Situ Etch and Regrowth in Gallium Nitride Based Devices
Method and System for Gallium Nitride Electronic Devices Using Engineered Substrates
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode by Regrowth and Etch Back
Method and System for Edge Termination in Gan Materials by Selective Area Implantation Doping
Application:
13/586,330 →
Publication:
US 2014/0048903
Bondable Top Metal Contacts for Gallium Nitride Power Devices
Vertical Gan Jfet with Low Gate-Drain Capacitance and High Gate-Source Capacitance
Lateral Gan Jfet with Vertical Drift Region
Gan Vertical Bipolar Transistor
Method and System for Gallium Nitride Vertical Jfet with Separated Gate and Source
Application:
13/689,574 →
Publication:
US 2014/0145201
Ac-Dc Converter for Wide Range Output Voltage and High Switching Frequency
Vertical Gan Power Device with Breakdown Voltage Control
Method and System for Co-Packaging Gallium Nitride Electronics
High Power Density Off-Line Power Supply
Application:
13/731,872 →
Publication:
US 2014/0185327
Gallium Nitride Vertical Jfet with Hexagonal Cell Structure
Application:
13/735,897 →
Publication:
US 2014/0191241
Method and System for a Gallium Nitride Vertical Transistor
Method of Fabricating a Merged P-N Junction and Schottky Diode with Regrown Gallium Nitride Layer
Method and System for Co-Packaging Vertical Gallium Nitride Power Devices
Aluminum Gallium Nitride Etch Stop Layer for Gallium Nitride Based Devices
Monolithically Integrated Vertical Jfet and Schottky Diode
Method and System for Operating Gallium Nitride Electronics
Patent:
8,947,154 →
Application:
14/045,708 →
Method and System for Carbon Doping Control in Gallium Nitride Based Devices
Gan-Based Schottky Barrier Diode with Field Plate
Application:
14/062,724 →
Publication:
US 2014/0051236
High Power Gallium Nitride Electronics Using Miscut Substrates
Gallium Nitride Field Effect Transistor with Buried Field Plate Protected Lateral Channel
Method and System for Interleaved Boost Converter with Co-Packaged Gallium Nitride Power Devices
Ac-Dc Converter with Adjustable Output
Related Assignments
(15)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 2, 2012
From: KIZILYALLI, ISIK C.; NIE, HUI; EDWARDS, ANDREW P.; ROMANO, LINDA
To: EPOWERSOFT, INC.
Reel/Frame 028141/0816 →
Change of Name
Jul 17, 2012
From: EPOWERSOFT, INC.
To: AVOGY, INC.
Reel/Frame 028583/0134 →
Assignment of Assignor's Interest
Jul 17, 2012
From: BOUR, DAVID P.; ROMANO, LINDA; PRUNTY, THOMAS R.; KIZILYALLI, ISIK C.
To: EPOWERSOFT, INC.
Reel/Frame 028570/0172 →
Assignment of Assignor's Interest
Jul 17, 2012
From: KIZILYALLI, ISIK C.; NIE, HUI; EDWARDS, ANDREW P.; ROMANO, LINDA
To: EPOWERSOFT, INC.
Reel/Frame 028569/0981 →
Change of Name
Jul 19, 2012
From: EPOWERSOFT, INC.
To: AVOGY, INC.
Reel/Frame 028600/0775 →
Security Interest
Apr 1, 2014
From: AVOGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 032611/0010 →
Assignment of Assignor's Interest
Feb 2, 2018
From: AVOGY, INC.
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 045229/0547 →
Corrective Assignment to Correct the Assignor from Avogy, Inc. to Avogy (Abc), Llc Previously Recorded on Reel 045229 Frame 0547. Assignor(S) Hereby Confirms the Assignment.
Dec 13, 2018
From: AVOGY (ABC), LLC
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 047827/0774 →
Assignment of Assignor's Interest
Dec 18, 2018
From: AVOGY, INC.
To: AVOGY (ABC), LLC
Reel/Frame 047951/0967 →
Security Interest
Oct 23, 2020
From: NEXGEN POWER SYSTEMS, INC.
To: SOUTH LAKE ONE LLC
Reel/Frame 054244/0822 →
Release of Security Interest
Jul 26, 2021
From: SOUTH LAKE ONE LLC
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 056973/0477 →
Assignment of Assignor's Interest
Mar 11, 2024
From: NEXGEN POWER SYSTEMS, INC.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 066783/0161 →
Assignment of Assignor's Interest
Apr 19, 2024
From: NEXGEN POWER SYSTEMS, INC.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 067172/0711 →
Nunc Pro Tunc Assignment
Apr 24, 2024
From: NEXGEN POWER SYSTEMS, INC.
To: NEXGEN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Reel/Frame 067852/0662 →
Corrective Assignment to Correct the the Assignor Name Previously Recorded at Reel: 66783 Frame: 161. Assignor(S) Hereby Confirms the Assignment.
Apr 24, 2024
From: NEXGEN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 067217/0886 →