Granted Patent B2

US 9,105,579 · App. 13/552,365 · Granted Aug 11, 2015

Abstract

Claims (44)

1. A method for fabricating a vertical gallium nitride (GaN) power device, the method comprising:

providing a GaN substrate with a top surface and a bottom surface, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is more than 20 nm and less than 200 nm;

forming a device layer contacting the top surface of the GaN substrate;

forming a metal contact on a top surface of the vertical GaN power device;

forming a backside metal contacting the bottom surface of the GaN substrate by:

forming an aluminum adhesion layer directly coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises a first material;

forming a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a second material, wherein the second material is different from the first material;

forming a protection layer coupled to the diffusion barrier, wherein the protection layer comprises a third material, wherein the third material is different from the first and second materials;

forming a fourth layer as part of the aluminum adhesion layer, wherein the fourth layer comprises a fourth material, wherein the fourth material is different from the first, second, and third materials; and

forming a fifth layer as part of the protection layer, wherein the fifth layer comprises a fifth material, wherein the fifth material is different from the first, second, third and fourth materials,

wherein the third and fifth materials are selected from gold and silver with a total layer thickness between 100 nm to 900 nm, and

wherein the first, fourth, second, third and fifth materials are stacked in sequential order,

wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.

2. The method of claim 1 wherein the GaN substrate comprises an n-type GaN substrate.

3. The method of claim 2 wherein the vertical GaN power device is not subject to an anneal temperature greater than 400° C. after the forming of the aluminum adhesion layer.

4. The method of claim 1 wherein forming the diffusion barrier includes forming a layer substantially comprising nickel.

5. The method of claim 1 wherein forming the protection layer includes forming a layer substantially comprising silver.

6. The method of claim 1 further comprising polishing the bottom surface of the GaN substrate before forming the aluminum adhesion layer.

7. The method of claim 1 wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.

8. The method of claim 7 further comprising soldering, wherein the soldering comprises placing a solder between the protection layer and a metal lead frame and subsequently heating the solder beyond its melting temperature.

9. The method of claim 8 wherein the solder comprises:

at least one of a paste or a preform, and

wherein the solder comprises at least 80 wt % lead.

10. A semiconductor device comprising:

a gallium nitride (GaN) substrate with a top surface and a bottom surface;

a device layer contacting the top surface of the GaN substrate, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is more than 20 nm and less than 200 nm;

a metal contact coupled to the device layer; and

a backside metal contacting the bottom surface of the GaN substrate and comprising:

an aluminum adhesion layer directly coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises a first material;

a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a second material, wherein the second material is different from the first material;

a protection layer coupled to the diffusion barrier, wherein the protection layer comprises a third material, wherein the third material is different from the first and second materials;

a fourth layer, wherein the fourth layer is part of the aluminum adhesion layer, and wherein the fourth layer comprises a fourth material, wherein the fourth material is different from the first, second, and third materials; and

a fifth layer, wherein the fifth layer is part of the protection layer, and wherein the fifth layer comprises a fifth material, wherein the fifth material is different from the first, second, third and fourth materials,

wherein the third and fifth materials are selected from gold and silver with a total layer thickness between 100 nm to 900 nm,

wherein the first, fourth, second, third and fifth materials are stacked in sequential order, and

wherein the semiconductor device is configured to conduct electricity between the metal contact and the backside metal.

11. The semiconductor device of claim 10 wherein the GaN substrate comprises an n-type GaN substrate.

12. The semiconductor device of claim 11 wherein the aluminum adhesion layer is not subject to an anneal temperature greater than 400° C.

13. The semiconductor device of claim 10 wherein the diffusion barrier substantially comprises nickel.

14. The semiconductor device of claim 10 wherein the protection layer substantially comprises silver.

15. The semiconductor device of claim 10 further comprising a solder material coupled to the backside metal.

16. The semiconductor device of claim 10 wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.

17. The semiconductor device of claim 15 wherein the solder material comprises a solder paste, a solder preform, or both.

18. The semiconductor device of claim 15 further comprising a lead frame electrically coupled to the backside metal by the solder material.

Assignments (12)