Vertical GaN JFET with gate source electrodes on regrown gate
View Patent ↗A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure.
1. A vertical power device comprising:
a III-nitride substrate having an upper surface and an opposing lower surface;
a junction field effect transistor (VJFET) comprising a gate region, a drain region, a source region, and a channel region, each formed on the substrate;
a first III-nitride epitaxial layer having a first conductivity type coupled to the upper surface of the substrate, wherein the first III-nitride epitaxial layer forms the channel region of the VJFET;
a second III-nitride layer having a second conductivity coupled the first III-nitride layer;
a first electrode coupled to the first III-nitride layer;
a second electrode coupled to the second III-nitride layer; and
an edge termination structure surrounding the first electrode and the second electrode.
2. The vertical power device of claim 1 wherein the second III-nitride epitaxial layer comprises the gate region of the VJFET.
3. The vertical power device of claim 2 wherein the gate region is characterized by a continuous planar gate structure coupled to a plurality of finger-like gate structures.
4. The vertical power device of claim 2 wherein the channel region is disposed between two adjacent finger-like gate structures.
5. The vertical power device of claim 2 further comprising a dielectric layer coupled to the second III-nitride layer, the dielectric layer electrically isolating the first electrode from the gate region.
6. The vertical power device of claim 1 wherein the second III-nitride layer further comprises the edge termination structure.
7. The vertical power device of claim 1 wherein the second conductivity type is opposite of the first conductivity type.
8. The vertical power device of claim 1 wherein the edge termination structure comprises a plurality of edge termination rings arranged concentrically.
9. The vertical power device of claim 1 wherein the edge termination structure comprises a junction termination extension region.
10. The vertical power device of claim 1 wherein the first electrode is a source electrode and the second electrode is a gate electrode.
11. The vertical power device of claim 1 further comprising a third electrode coupled to the lower surface of the III-nitride substrate.
12. The vertical power device of claim 11 wherein the third electrode is a drain electrode.
13. A vertical power device comprising:
a gallium nitride (GaN) substrate having a top surface and a bottom surface;
a GaN drift region formed in a first epitaxial layer coupled to and disposed over the top surface;
a channel region formed in the first epitaxial layer coupled to and disposed over the GaN drift region;
a gate region characterized by a continuous planar gate structure coupled to a plurality of finger-like gate structures;
a gate electrode coupled to the gate region;
a source electrode coupled to the channel region; and
an edge termination structure surrounding the gate electrode and the source electrode.
14. The vertical power device of claim 13 wherein the GaN substrate and the GaN drift region have a first conductivity type and the gate region has a second conductivity type opposite to the first conductivity type.
15. The vertical power device of claim 14 wherein the channel region is disposed between two adjacent finger-like gate structures from the plurality of finger-like gate structures.
16. The vertical power device of claim 13 further comprising a dielectric layer disposed between the source electrode and the gate region.
17. The vertical power device of claim 13 further comprising a drain electrode coupled to the bottom surface of the GaN substrate.
18. A method comprising:
providing a gallium nitride (GaN) substrate having an upper surface and a lower surface;
forming a first epitaxial GaN layer having n-type conductivity coupled to the upper surface, the first GaN layer comprising a channel region;
after forming the first epitaxial layer, forming a second epitaxial GaN layer having p-type conductivity coupled to the first GaN layer;
forming an edge termination structure and a gate region in the second GaN layer;
forming a source region having n-type conductivity coupled to the first GaN layer;
forming a gate electrode coupled to the gate region;
forming a source electrode coupled to the source region; and
forming a drain electrode coupled to the lower surface of the GaN substrate;
wherein the edge termination structure surrounds the gate electrode and the source electrode.
19. The method of claim 18 further comprising:
forming a dielectric layer overlying the first and the second GaN layers;
forming one or more vias in the dielectric layer, wherein the one or more vias are configured to provide an electrical path between the gate electrode and the gate region.
20. The method of claim 18 wherein the gate region is characterized by a continuous planar region coupled to one or more finger-like elongated gate structures.