Patent Assignment
Reel/Frame 028583/0134
Change of Name
Recorded: 2012-07-17
Pages: 3
Assignor
EPOWERSOFT, INC.
Executed: 2012-04-11
Assignee
AVOGY, INC.
677 RIVER OAKS PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties
(27)
Controlled Doping in III-V Materials
Application:
13/079,710 →
Publication:
US 2012/0248577
Epitaxial Lift-Off and Wafer Reuse
Application:
13/118,900 →
Publication:
US 2012/0309172
Electrical Isolation Of High Defect Density Regions In A Semiconductor Device
Application:
13/180,758 →
Publication:
US 2013/0015552
Method and System for a Gan Vertical Jfet Utilizing a Regrown Gate
Method and System for a Gan Vertical Jfet Utilizing a Regrown Channel
Method and System for Formation of P-N Junctions in Gallium Nitride Based Electronics
Method and System for Diffusion and Implantation in Gallium Nitride Based Devices
Monolithically Integrated Hemt and Schottky Diode
Application:
13/267,552 →
Publication:
US 2013/0087803
Method and System for Floating Guard Rings in Gallium Nitride Materials
Method of Fabricating a Gallium Nitride Merged P-I-N Schottky (Mps) Diode
Schottky Diode with Buried Layer in Gan Materials
Monolithically Integrated Vertical Jfet and Schottky Diode
Aluminum Gallium Nitride Etch Stop Layer for Gallium Nitride Based Devices
Method and System for Fabricating Floating Guard Rings in Gan Materials
Gallium Nitride-Based Schottky Barrier Diode with Aluminum Gallium Nitride Surface Layer
Gan-Based Schottky Barrier Diode with Field Plate
Method and System for Carbon Doping Control in Gallium Nitride Based Devices
In-Situ Sin Growth to Enable Schottky Contact for Gan Devices
Application:
13/312,055 →
Publication:
US 2013/0143392
Vertical Gan-Based Metal Insulator Semiconductor Fet
Vertical Gan Jfet with Gate Source Electrodes on Regrown Gate
Ingan Ohmic Source Contacts for Vertical Power Devices
Method and System for a Gan Vertical Jfet with Self-Aligned Source and Gate
Method and System for Junction Termination in Gan Materials Using Conductivity Modulation
Method of Fabricating a Gan P-I-N Diode Using Implantation
Fabrication of Floating Guard Rings Using Selective Regrowth
Method and System for Fabricating Edge Termination Structures in Gan Materials
Method and System for a Gan Self-Aligned Vertical Mesfet
Related Assignments
(15)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 27, 2012
From: DISNEY, DONALD R.; EDWARDS, ANDREW P.; NIE, HUI; BROWN, RICHARD J.
To: EPOWERSOFT, INC.
Reel/Frame 028123/0716 →
Assignment of Assignor's Interest
Apr 27, 2012
From: ROMANO, LINDA; EDWARDS, ANDREW P.; BROWN, RICHARD J.; BOUR, DAVID P.
To: EPOWERSOFT, INC.
Reel/Frame 028123/0722 →
Assignment of Assignor's Interest
May 2, 2012
From: KIZILYALLI, ISIK C.; NIE, HUI; EDWARDS, ANDREW P.; ROMANO, LINDA
To: EPOWERSOFT, INC.
Reel/Frame 028141/0816 →
Assignment of Assignor's Interest
May 25, 2012
From: ROMANO, LINDA; BOUR, DAVID P.; EDWARDS, ANDREW; NIE, HUI
To: EPOWERSOFT, INC.
Reel/Frame 028273/0186 →
Security Interest
Apr 1, 2014
From: AVOGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 032611/0010 →
Assignment of Assignor's Interest
Feb 2, 2018
From: AVOGY, INC.
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 045229/0547 →
Release of Security Interest
Feb 13, 2018
From: SILICON VALLEY BANK
To: AVOGY, INC.
Reel/Frame 045317/0963 →
Corrective Assignment to Correct the Assignor from Avogy, Inc. to Avogy (Abc), Llc Previously Recorded on Reel 045229 Frame 0547. Assignor(S) Hereby Confirms the Assignment.
Dec 13, 2018
From: AVOGY (ABC), LLC
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 047827/0774 →
Assignment of Assignor's Interest
Dec 18, 2018
From: AVOGY, INC.
To: AVOGY (ABC), LLC
Reel/Frame 047951/0967 →
Security Interest
Oct 23, 2020
From: NEXGEN POWER SYSTEMS, INC.
To: SOUTH LAKE ONE LLC
Reel/Frame 054244/0822 →
Release of Security Interest
Jul 26, 2021
From: SOUTH LAKE ONE LLC
To: NEXGEN POWER SYSTEMS, INC.
Reel/Frame 056973/0477 →
Assignment of Assignor's Interest
Mar 11, 2024
From: NEXGEN POWER SYSTEMS, INC.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 066783/0161 →
Assignment of Assignor's Interest
Apr 19, 2024
From: NEXGEN POWER SYSTEMS, INC.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 067172/0711 →
Corrective Assignment to Correct the the Assignor Name Previously Recorded at Reel: 66783 Frame: 161. Assignor(S) Hereby Confirms the Assignment.
Apr 24, 2024
From: NEXGEN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 067217/0886 →
Nunc Pro Tunc Assignment
Apr 24, 2024
From: NEXGEN POWER SYSTEMS, INC.
To: NEXGEN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Reel/Frame 067852/0662 →